C. Liu

Broadband moth-eye antireflection coatings fabricated by low-cost nanoimprinting

Subwavelength scale antireflection moth-eye structures in silicon were fabricated by a wafer-scale nanoimprint technique and demonstrated an average reflection of 1% in the spectral range from 400 to 1000 nm at normal incidence. An excellent antireflection property out to large incident angles is shown with the average reflection below 8% at 60°. Pyramid array gave an almost constant average reflection of about 10% for an incident angle up to 45° and concave-wall column array produced an approximately linear relation between the average reflection and the incident angles. The technique is promising for improving conversion efficiencies of silicon solar cells.

GaN micro-light-emitting diode arrays with monolithically integrated sapphire microlenses

GaN micro-light-emitting diodes (micro-LEDs) with monolithically integrated microlenses have been demonstrated. Microlenses, with a focal length of 44 μm and a root mean square roughness of ∼1 nm, have been fabricated on the polished back surface of a sapphire substrate of an array of micro-LEDs by resist thermal reflow and plasma etching. The optical properties of the microlenses have been demonstrated to alter the emission pattern of the LED emitters. The cone of light emitted from this hybrid device is significantly less divergent than a conventional broad-area device. This combination of micro-LED and microlens technologies offers the potential for further improvement in the overall efficiency of GaN-based light emitters.

Reflection/transmission confocal microscopy characterization of single-crystal diamond microlens arrays

Using the method of photoresist reflow and inductively coupled plasma dry etching, we have fabricated microlens arrays in type-IIa natural single-crystal diamond, with diameters down to 10 μm. The surface profile of the microlenses was characterized by atomic force microscopy and was found to match well with a spherical shape, with a surface roughness of better than 1.2 nm. To characterize the optical properties of these diamond microlens arrays, a laser scanning reflection/transmission confocal microscopy technique has been developed. This technique enabled the surface profile of the microlenses to be measured simultaneously with optical parameters including focal length and spot size, opening up an application area for confocal microscopy.

Quantum dot emission from site-controlled InGaN/GaN micropyramid arrays

InxGa1−xN quantum dots have been fabricated by the selective growth of GaN micropyramid arrays topped with InGaN∕GaN quantum wells. The spatially, spectrally, and time-resolved emission properties of these structures were measured using cathodoluminescence hyperspectral imaging and low-temperature microphotoluminescence spectroscopy. The presence of InGaN quantum dots was confirmed directly by the observation of sharp peaks in the emission spectrum at the pyramid apices. These luminescence peaks exhibit decay lifetimes of approximately 0.5ns, with linewidths down to 650μeV (limited by the spectrometer resolution).

Fabrication of natural diamond microlenses by plasma etching

Advantageous properties including optical transparency, high thermal conductivity, and high carrier mobility make natural diamond an attractive choice for a range of optical and electrical devices. However, its hardness and chemical inertness provide a significant challenge for device processing. We demonstrate the ability to etch natural type IIa diamond using inductively coupled plasma etching with a significant etch rate of 228nm∕min. The etched surfaces were characterized by atomic force microscopy and found to have a root-mean-square roughness of below 3 nm. Using the photoresist reflow technique, refractive microlens arrays, with diameters ranging from 10 to 100 μm, were fabricated on the same diamond substrates. The lenses were characterized by confocal microscopy, which showed that their focal lengths, ranging from 5 to 500 μm, were in excellent agreement with the predicted values, demonstrating the high fidelity of the fabrication process.

Use of AlInN layers in optical monitoring of growth of GaN-based structures on free-standing GaN substrates

When lattice matched to GaN, the AlInN ternary alloy has a refractive index ∼7% lower than that of GaN. This characteristic can be exploited to perform in situ reflectometry during epitaxial growth of GaN-based multilayer structures on free-standing GaN substrates, by insertion of a suitable Al0.82In0.18N layer. The real-time information on growth rates and cumulative layer thicknesses thus obtainable is particularly valuable in the growth of optical resonant cavity structures. We illustrate this capability with reference to the growth of InGaN∕GaN multiple quantum-well structures, including a doubly periodic structure with relatively thick GaN spacer layers between groups of wells. Al0.82In0.18N insertion layers can also assist in the fabrication of resonant cavity structures in postgrowth processing, for example, acting as sacrificial layers in a lift-off process exploiting etch selectivity between Al0.82In0.18N and GaN.

High-resolution cathodoluminescence hyperspectral imaging of nitride nanostructures

Hyperspectral cathodoluminescence imaging provides spectrally and spatially resolved information on luminescent materials within a single dataset. Pushing the technique toward its ultimate nanoscale spatial limit, while at the same time spectrally dispersing the collected light before detection, increases the challenge of generating low-noise images. This article describes aspects of the instrumentation, and in particular data treatment methods, which address this problem. The methods are demonstrated by applying them to the analysis of nanoscale defect features and fabricated nanostructures in III-nitride-based materials.

Fabrication and evaluation of GaN negative and bifocal microlenses

Methods of fabricating negative and bifocal microlens arrays have been demonstrated in this paper. The technique of photoresist molding using a sapphire positive lens template was used for the patterning of negative microlenses, while the bifocal microlens arrays were fabricated using a two-step etch process. In both cases, the lenses were etched using inductively coupled plasma. Microlenses with diameters as small as 10μm have been demonstrated and were characterized using atomic force microscopy and confocal microscopy. The lens arrays were found to be smooth, uniform, and to have focal lengths consistent with their design and calculated values.

Light emission from InGaN quantum wells grown on the facets of closely spaced GaN nano-pyramids formed by nano-imprinting

InxGa1-xN/GaN quantum wells have been grown on the {1011} facets of dense arrays of self-assembled GaN nano-pyramids formed by selective area growth and characterised by high spatial resolution cathodoluminescence. The pyramids are shown to have significantly reduced defect (green-yellow) band emission and the quantum well luminescence is correspondingly intense. The peak energy of this luminescence is shown to blue-shift as the sampled region is moved up the pyramid facets, revealing that InN incorporation in such closely spaced epitaxial nanostructures differs from that in widely spaced micron-size pyramidal structures decreasing rather than increasing towards the nano-pyramid tips.

InGaN nano-ring structures for high-efficiency light emitting diodes

A technique based on the Fresnel diffraction effect for the fabrication of nano-scale site-controlled ring structures in InGaN/GaN multi-quantum well structures has been demonstrated. The ring structures have an internal diameter of 500 nm and a wall width of 300 nm. A 1cm−1 Raman shift has been measured, signifying substantial strain relaxation from the fabricated structure. The 9 nm blueshift observed in the cathodoluminescence spectra can be attributed to band filling and/or screening of the piezoelectric field. A light emitting diode based on this geometry has been demonstrated.