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Featured researches published by C.M. Fang.


Journal of Physics: Condensed Matter | 1996

Electronic structure of the misfit layer compound (SnS)1:20TiS2: band structure calculations and photoelectron spectra

C.M. Fang; R. de Groot; G.A. Wiegers; C. Haas

In order to understand the electronic structure of the incommensurate misfit layer compound (SnS)1:20TiS2 we carried out an ab initio band structure calculation in the supercell approximation. The band structure is compared with that of the components 1T-TiS2 and hypothetical SnS with a similar structure as in (SnS)1:20TiS2. The calculations show that the electronic structure is approximately a superposition of the electronic structures of the two components TiS2 and SnS, with a small charge transfer from the SnS layer to the TiS2 layer. The interlayer bonding between SnS and TiS2 is dominated by covalent interactions. X-ray and ultraviolet photoelectron spectra of the valence bands are in good agreement with the band structure calculation.


Journal of Physics: Condensed Matter | 1996

Electronic structure and magnetic properties of KCrSe2

C.M. Fang; P R Tolsma; C.F. van Bruggen; R. de Groot; G.A. Wiegers; C. Haas

characterized by x-ray powder diffraction is a layered compound isostructural with : a = 3.80 A; c = 22.19 A; space group . The magnetic properties are similar to those of but with an even more pronounced difference between the intralayer and interlayer exchange interactions of localized moments. The magnetic susceptibility above 100 K is of a Curie - Weiss nature; the Curie temperature is +250 K. An antiferromagnetic transition with K occurs; in the ordered state, ferromagnetic layers are coupled antiferromagnetically. The analysis showed the intralayer exchange interaction and interlayer exchange interaction to be 16.7 K and -0.06 K, respectively. A band-structure calculation using the LSW method was performed for in the ferromagnetic state (neglecting the interlayer antiferromagnetic ordering). The calculations show that is a semiconductor with a band gap of 0.7 eV. The potassium atoms are nearly ionized. The Cr states are completely spin polarized. The electronic configuration of Cr is , with a local magnetic moment of per Cr atom.


Physica B-condensed Matter | 1996

Crystal structure and band structure calculations of Pb1/3TaS2 and Sn1/3NbS2

C.M. Fang; G.A. Wiegers; Auke Meetsma; R A de Groot; C. Haas

Abstract The crystal structures of Pb 1 3 TaS 2 and Sn 1 3 NbS 2 were determined using single-crystal X-ray diffraction. The space group is P6322 and the unit cell dimensions are: a = 5.759(1), c = 14.813(1) A and a = 5.778(1), c = 14.394(1) A , for the Pb and Sn compounds, respectively. The post-transition metal atoms occupy one-third of the trigonal-antiprismatic holes between sandwiches NbS2 and TaS2. The Nb and Ta atoms are in trigonal-prismatic coordination by sulfur atoms. The stacking of sandwiches is the same as in 2H disulfides. The arrangement of the post-transition metal atoms is different for the two compounds. A bond valence calculation showed Sn and Pb to be divalent. Ab initio band structure calculations were performed for Sn 1 3 NbS 2 using the localized spherical wave method, and for Pb 1 3 TaS 2 with the augmented spherical wave method with spin-orbital interactions included. The calculations show that the rigid band model is approximately valid for the electronic structures; the main difference with those of 2HNbS2 and 2HTaS2 being the presence of Sn 5s and 5p (Pb 6s and 6p) bands and a larger S 3p/Nb(Ta) 4d (5d) gap in the intercalates (1.0 eV for Sn 1 3 NbS 2 , 1.3 eV for Pb 1 3 TaS 2 . The Sn 5s (Pb 6s) bands are at the bottom (bonding) and top (antibonding) of the valence bands which range from about −7 to about 0 eV. The conduction bands are composed of Nb 4dz2 or Ta 5dz2 orbitals hybridized with S 3p. These bands are filled to about 0.3 holes per Nb (Ta), corresponding to a donation of two electrons per Sn (Pb).


Surface Science | 1999

Influence of a spin-polarized tip on the Fe(001) surface

C.M. Fang; de Robert Groot; M.M.J. Bischoff; H. van Kempen

A detailed study of ab initio calculations for an iron parallel electrode and a tip–surface system, using the localized spherical wave method and the supercell-slab approach is presented. The calculations show that within the medium inter-electrode distance range (about 2.9 to 5.7 A) the interaction between two parallel electrodes has a strong influence on the local surface electronic structure, while the magnetic moment is almost constant. A tip induces changes of the specific surface states near the Fermi level. However, the spin-polarization of the tip shows no significant influence on the surface states.


Physical Review B | 1995

Electronic structure of the misfit-layer compound (SnS)1.17NbS2 deduced from band-structure calculations and photoelectron spectra

C.M. Fang; A.R.H.F. Ettema; C. Haas; G.A. Wiegers; H. van Leuken; R. de Groot


Physical Review B | 1998

Oscillatory behavior of the magnetic moments of gold-covered iron surfaces

C.M. Fang; R. de Groot; M.M.J. Bischoff; H. van Kempen


Lecture Notes in Physics | 2005

Half-Metals: Challenges in Spintronics and Routes Toward Solutions

J. J. Attema; L. Chioncel; C.M. Fang; G.A. de Wijs; R. de Groot


Acta Physica Polonica A | 2003

Scanning tunneling spectroscopy study of surface states of 3d metals: Chemical identification, magnetic contrast and orbital kondo resonance states

M.M.J. Bischoff; C.M. Fang; R.A. de Groot; G.M.M. Heijnen; M. I. Katsnelson; O. Yu. Kolesnychenko; R. de Kort; A. I. Lichtenstein; Aidan J. Quinn; A.L. Vasquez de Parma; Toyo Kazu Yamada; H. van Kempen


Journal of Alloys and Compounds | 2003

Thermal expansion of cubic Si 3N 4 with the spinel structure

Htjm Bert Hintzen; M. R. M. M Hendrix; Harry J. Wondergem; C.M. Fang; Tomoko Sekine


Archive | 2003

Local electronic structure of FeÑ001Ö surfaces studied by scanning tunneling spectroscopy

M.M.J. Bischoff; Toyo Kazu Yamada; C.M. Fang; R.A. de Groot; H. van Kempen

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R. de Groot

Radboud University Nijmegen

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C. Haas

University of Groningen

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G.A. Wiegers

University of Groningen

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H. van Kempen

Radboud University Nijmegen

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M.M.J. Bischoff

Radboud University Nijmegen

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G.A. de Wijs

Radboud University Nijmegen

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Htjm Bert Hintzen

Eindhoven University of Technology

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A.R.H.F. Ettema

Delft University of Technology

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Auke Meetsma

University of Groningen

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