C M Orfanidou

Memristive and neuromorphic behavior in a Li x CoO 2 nanobattery

The phenomenon of resistive switching (RS), which was initially linked to non-volatile resistive memory applications, has recently also been associated with the concept of memristors, whose adjustable multilevel resistance characteristics open up unforeseen perspectives in cognitive computing. Herein, we demonstrate that the resistance states of LixCoO2 thin film-based metal-insulator-metal (MIM) solid-state cells can be tuned by sequential programming voltage pulses, and that these resistance states are dramatically dependent on the pulses input rate, hence emulating biological synapse plasticity. In addition, we identify the underlying electrochemical processes of RS in our MIM cells, which also reveal a nanobattery-like behavior, leading to the generation of electrical signals that bring an unprecedented new dimension to the connection between memristors and neuromorphic systems. Therefore, these LixCoO2-based MIM devices allow for a combination of possibilities, offering new perspectives of usage in nanoelectronics and bio-inspired neuromorphic circuits.

Heat Channeling in Extremely Thin Silicon-on-Insulator Devices: A Simulation Study

Silicon-on-insulator (SoI) devices are particularly interesting for thermal management studies as they suffer from severe self-heating because of the very low and isotropic thermal conductivity of silicon dioxide that is being used as a buried oxide (BOX) layer. La5Ca9Cu24O41 (LCCO) exhibits highly anisotropic magnon-mediated thermal conductivity while at the same time is electrically insulating. A series of simulation studies has been carried out that deal with the design of an effective thermal management solution for transistors built on extremely thin SoI wafers with an LCCO BOX layer. It is shown that a heat channeling effect is produced, which can result in a significant reduction of the transistor operating temperature, the magnitude of which depends on the thickness of the BOX layer.