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Dive into the research topics where C. Minot is active.

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Featured researches published by C. Minot.


Superlattices and Microstructures | 1985

Hopping mobility in semiconductor superlattices

J.F. Palmier; H. Le Person; C. Minot; A. Chomette; A. Regreny; D. Calecki

Abstract We present results on the electrical transport perpendicular to interfaces in GaAs/AlxGa1−xAs superlattices. We have measured the current-voltage characteristics on a series of superlattices. This has been simulated numerically, the superlattice being replaced by an effective medium. Using this model we obtain the values of the effective mobility as a function of the superlattice period. Our data are in good agreement with a theory of phonon-assisted hopping transport between localized states, rather than the theory of phonon-limited band transport of Bloch waves.


Applied Physics Letters | 1992

Gunn oscillations up to 20 GHz optically induced in GaAs/AlAs superlattice

H. Le Person; C. Minot; L. Boni; J. F. Palmier; F. Mollot

Direct observation of Gunn oscillations up to 20 GHz, induced by picosecond light pulses in an undoped GaAs/AlAs superlattice, is reported. They are obtained in the superlattice growth direction and from 7 K up to room temperature. The frequency is strongly dependent on the applied bias voltage and on the photoexcited carrier density. The oscillation frequency and the mode of operation are modeled by a classical numerical simulation.


Surface Science | 1990

Time of flight of electrons and holes at 77 and 300 K in GaAs/AlAs superlattices

H. Le Person; J. F. Palmier; C. Minot; J.C. Esnault; F. Mollot

Abstract The carrier drift velocity versus applied electric field in GaAs/AlAs superlattices is directly determined from a photocurrent time of flight technique. The electron negative differential velocity regime is clearly evidenced and in good agreement with static current-voltage data in the case of a relatively thick barrier superlattice (7 AlAs layers). For a thinner barrier superlattice (4 AlAs layers) the low field electron mobility seems temperature dependent, and also a drastic hole mobility decrease is observed at low temperature and interpreted in terms of light hole freeze out.


international topical meeting on microwave photonics | 1997

Direct Optical Injection Locking Of Superlattice Millimetre-wave Oscillators

D. Tanguy; E. Penard; P. Legaud; C. Minot

We present results on superlattice oscillators for optical to mm-wave conversion which show that this new component is a good candidate for indoor wireless communications. The optical synchronisation is study theorically, and we present for the first time direct injection locking with wide locking bandwidth.


Superlattices and Microstructures | 1989

Perpendicular transport studies in GaAsAlAs superlattices by a time-resolved photocurrent experiment

C. Minot; H. Le Person; J.F. Palmier; R. Planel

Abstract We report on perpendicular transport properties of GaAs/AlAs superlattices at room-temperature. The temporal response of n-i-n superlattice photoconductors is measured, and analyzed by means of a numerical simulation, which yields the carrier mobilities and the electron saturated velocities by solving the drift-diffusion equations. Several samples are studied which differ by the barrier thickness only. The results are compared with theoretical predictions of phonon-limited carrier mobilities. They are discussed in terms of Bloch conduction in the superlattice minibands, and reveal non-linear transport effects.


Superlattices and Microstructures | 1987

Perpendicular transport in superlattice bipolar transistors (SBT)

A. Sibille; J.F. Palmier; C. Minot; J.C. Harmand; C. Dubon-Chevallier

Abstract Diffusion-limited electron transport in superlattices is studied by gain measurements on heterojunction bipolar transistors with a GaAs GaAlAs superlattice base. In the case of thin barriers, Bloch conduction is observed, while hopping between localized levels prevails for large barriers. A transition occurs between these two regimes, localization being achieved when the energy broadening induced by the electron-phonon coupling added to the disorder due to imperfect growth is of the order of the miniband width. This interpretation is supported by temperature dependence measurements of the perpendicular mobilities in relation with theoretical calculations of these mobilities.


international topical meeting on microwave photonics | 1996

Millimetre-wave superlattice oscillators for optically-fed wireless communications

C. Minot; H. Le Person; Jean-François Palmier; D. Tanguy; E. Penard; J. C. Harmand; J.P. Medus; J.C. Esnault

We report on millimetre-wave superlattice oscillators intended for use in optically-fed wireless communication systems as injection locked light to mm-wave converters. mm-wave generation is demonstrated in the Q and V bands, as well as high bit rate data transmission.


Superlattices and Microstructures | 1992

Light induced space charge waves in GaAs/AlAs superlattices

C. Minot; H. Le Person; J. F. Palmier; F. Mollot

Abstract We report time-resolved photocurrent experiments in undoped GaAs/AlAs superlattices. Owing to a numerical simulation, the photoresponses are analysed in terms of the formation and propagation of space charge waves, based on the negative differential velocity of the electrons. Either transient or quasi-continuous space charge waves are evidenced, depending on the photocreated carrier density. The results are shown to be compatible with a miniband conduction mechanism.


Superlattices and Microstructures | 1989

High field perpendicular transport in GaAs/AlAs superlattices

A. Sibille; J.F. Palmier; C. Minot; F. Mollot

Abstract Perpendicular transport is investigated in undoped GaAs/AlAs superlattices (SL) as a function of temperature and electric field. Experimental current-voltage (I–V) characteristics are measured and compared to numerical simulations based on an effective medium approximation for the conduction in the SL. The validity of this procedure is confirmed by its applications to a reference GaAs sample whose transport properties are well known. We thus deduce the temperature and electric field dependence of the perpendicular electron velocity in the SL. In particular our data shows evidence of negative differential velocity (NDV) in one sample, in a large temperature range.


Superlattices and Microstructures | 1988

Negative resistance switching in superlattices: Resonant tunneling or hot electron transfer?

A. Sibille; J.F. Palmier; C. Minot; T. Bretagnon

Abstract Negative differential resistance (NDR) has been observed at low temperature on the current-voltage (I–V) characteristics of an undoped GaAs Ga 0.7 Al 0.3 As superlattice. Abrupt switching events towards a low conduction state can also occur, and are shown to result from spontaneous oscillations in the NDR region. Under hydrostatic pressure, the I–V curves do not exhibit the behavior typical of Gunn transfer towards the X or L valleys. The quenching of resonant tunneling conduction under large electric fields in the superlattice appears the source of NDR in the samples studied.

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F. Mollot

Centre national de la recherche scientifique

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