C. Parkes

Simulation Results From Double-Sided 3-D Detectors

A new ldquodouble sidedrdquo 3-D solid-state detector structure, intended to simplify the 3-D fabrication process, is proposed. In this structure, electrode columns of different doping types are etched from opposite sides of the substrate, with neither set of columns passing through the full substrate thickness. The finite-element simulation package ISE-TCAD is used to determine the performance of this structure. The double-sided detector shows similar electrostatic behavior to a standard 3-D detector, giving a low depletion voltage and fast charge collection. However, unless the electrode column length is very close to the substrate thickness, charge deposited around the front and back surfaces of the device is collected less quickly (though still rapidly compared with a planar geometry device). The breakdown voltage is dominated by high-field regions around the tips of the electrode columns and shows little change when the oxide charge is increased.

The LCFIVertex package: vertexing, flavour tagging and vertex charge reconstruction with an ILC vertex detector

The precision measurements envisaged at the International Linear Collider (ILC) depend on excellent instrumentation and reconstruction software. The correct identification of heavy flavour jets, placing unprecedented requirements on the quality of the vertex detector, will be central for the ILC programme. This paper describes the LCFIVertex software, which provides tools for vertex finding and for identification of the flavour and charge of the leading hadron in heavy flavour jets. These tools are essential for the ongoing optimisation of the vertex detector design for linear colliders such as the ILC. The paper describes the algorithms implemented in the LCFIVertex package as well as the scope of the code and its performance for a typical vertex detector design.

The LHCb VELO upgrade

Abstract The LHCb experiment plans to have a fully upgraded detector and data acquisition system in order to take data with instantaneous luminosities up to 5 times greater than currently. For this reason the first tracking and vertexing detector, the VELO, will be completely redesigned to be able to cope with the much larger occupancies and data acquisition rates. Two main design alternatives, micro-strips or pixel detectors, are under consideration to build the upgraded detector. This paper describes the options presently under consideration, as well as a few highlights of the main aspects of the current R&D. Preliminary results using a pixel telescope are also presented.

Charge Collection Studies and Electrical Measurements of Heavily Irradiated 3D Double-Sided Sensors and Comparison to Planar Strip Detectors

Three-dimensional (3D) silicon detectors offer advantages over standard planar devices as more radiation hard sensors. These detectors and their applications in the upgrades of the LHC experiments are discussed. 3D detectors with a double-sided geometry have been fabricated as very short strip detectors with similar inter-column spacing as proposed for the ATLAS pixel detector and LHCb vertex locator upgrades. The detectors have been irradiated up to a fluence of 2 × 1016 cm-2 1 MeV equivalent neutrons, which is twice the expected dose of the inner pixel layer of the ATLAS detector and of the upgraded LHCb vertex locator for LHC high luminosity upgrade (HL-LHC) operation. Electrical measurements show a lateral depletion voltage of only 4 V for the device before irradiation which increases to 200 V after an irradiation to a fluence of 1 × 1016 cm-2 1 MeV equivalent neutrons. The strip isolation of the p-type detectors was robust to the maximum fluence. Charge collection studies have been performed with analogue readout with 25 ns shaping time, as required for LHC experiments. The response of the detectors to high energy electrons from a 90Sr source and a collimated pulsed laser light source are shown and compared with planar devices. The 3D detector, operated at no more than 350 V, is shown to have superior charge collection characteristics to planar devices for all the fluence range expected at HL-LHC even when compared to planar devices operating at 1000 V. When operated at a bias voltage of 350 V the 3D detector collects 2.8 times more charge than a p-type planar device operated at 1000 V after a fluence of 1016 cm-2 1 MeV equivalent neutrons. Charge multiplication in 3D detectors is also reported, in both 90Sr and laser tests, which leads to further enhancement in the charge collection and signal-to-noise ratio of the detector. The effect is demonstrated, through laser tests, to occur close to the junction electrode.

Synchrotron Tests of a 3D Medipix2 X-Ray Detector

Three-dimensional (3D) photodiode detectors offer advantages over standard planar photodiodes in a range of applications, including X-ray detection for synchrotrons and medical imaging. The principal advantage of these sensors for X-ray imaging is their low charge sharing between adjacent pixels, which could improve spatial and spectral resolution. A double-sided 3D detector has been bonded to a Medipix2 single-photon-counting readout chip, and tested in a monochromatic X-ray beam at the Diamond synchrotron. Tests of the 3D detectors response spectrum and its Line Spread Function have shown that it has substantially lower charge sharing than a standard planar Medipix2 sensor. Additionally, the 3D detector was used to image diffraction rings produced by a powdered silicon sample, demonstrating the detectors use in a standard synchrotron experiment.

Charge collection efficiency and resolution of an irradiated double-sided silicon microstrip detector operated at cryogenic temperatures

Abstract This paper presents results on the measurement of the cluster shapes, resolution and charge collection efficiency of a double-sided silicon microstrip detector after irradiation with 24xa0GeV protons to a fluence of 3.5×10 14 xa0p/cm 2 and operated at cryogenic temperatures. An empirical model is presented which describes the expected cluster shapes as a function of depletion depth, and is shown to agree with the data. It is observed that the clusters on the p-side broaden if the detector is under-depleted, leading to a degradation of resolution and efficiency. The model is used to make predictions for detector types envisaged for the LHC experiments. The results also show that at cryogenic temperature the charge collection efficiency varies depending on the operating conditions of the detector and can reach values of 100% at unexpectedly low bias voltage. By analysing the cluster shapes it is shown that these variations are due to changes in depletion depth. This phenomenon, known as the “Lazarus effect”, can be related to similar recent observations on diode behaviour.

Beam Test Measurements With Planar and 3D Silicon Strip Detectors Irradiated to sLHC Fluences

The planned luminosity upgrade of the CERN LHC to the super LHC (sLHC) requires investigation of new radiation hard tracking detectors. Compared to the LHC, tracking detectors must withstand a 5-10 times higher radiation fluence. Promising radiation hard options are planar silicon detectors with n-side readout and silicon detectors in 3D technology, where columnar electrodes are etched into the silicon substrate. This article presents beam test measurements per formed with planar and 3D n-in-p silicon strip detectors. The detectors were irradiated to different fluences, where the maximum fluence was 3 × 1015 1 MeV neutron equivalent particles per square centimeter (neq/cm2) for the planar detectors and 2 × 1015 neq/cm2 for the 3D detectors. In addition to signal measurements, charge sharing and resolution of both detector technologies are compared. An increased signal from the irradiated 3D detectors at high bias voltages compared to the signal from the unirradiated detector indicates that charge multiplication effects occur in the 3D detectors. At a bias voltage of 260 V, the 3D detector irradiated to 2 × 1015 neq/cm2 yields a signal almost twice as high as the signal of the unirradiated detector. Only 30% of the signal of an unirradiated detector could be measured with the planar detector irradiated to 3 × 1015 neq/cm2 at a bias voltage of 600 V, which was the highest bias voltage applied to this sensor.

Alignment procedure of the LHCb vertex detector

Abstract LHCb is one of the four main experiments of the Large Hadron Collider (LHC) project, which will start at CERN in 2008. The experiment is primarily dedicated to B-Physics and hence requires precise vertex reconstruction. The silicon vertex locator (VELO) has a single hit precision of better than 10 μ m and is used both off-line and in the trigger. These requirements place strict constraints on its alignment. Additional challenges for the alignment arise from the detector being retracted between each fill of the LHC and from its unique circular disc r / φ strip geometry. This paper describes the track-based software alignment procedure developed for the VELO. The procedure is primarily based on a non-iterative method using a matrix inversion technique. The procedure is demonstrated with simulated events to be fast, robust and to achieve a suitable alignment precision.

Precision scans of the Pixel cell response of double sided 3D Pixel detectors to pion and X-ray beams

Three-dimensional (3D) silicon sensors offer potential advantages over standard planar sensors for radiation hardness in future high energy physics experiments and reduced charge-sharing for X-ray applications, but may introduce inefficiencies due to the columnar electrodes. These inefficiencies are probed by studying variations in response across a unit pixel cell in a 55μm pitch double-sided 3D pixel sensor bump bonded to TimePix and Medipix2 readout ASICs. Two complementary characterisation techniques are discussed: the first uses a custom built telescope and a 120GeV pion beam from the Super Proton Synchrotron (SPS) at CERN; the second employs a novel technique to illuminate the sensor with a micro-focused synchrotron X-ray beam at the Diamond Light Source, UK. For a pion beam incident perpendicular to the sensor plane an overall pixel efficiency of 93.0±0.5% is measured. After a 10o rotation of the device the effect of the columnar region becomes negligible and the overall efficiency rises to 99.8±0.5%. The double-sided 3D sensor shows significantly reduced charge sharing to neighbouring pixels compared to the planar device. The charge sharing results obtained from the X-ray beam study of the 3D sensor are shown to agree with a simple simulation in which charge diffusion is neglected. The devices tested are found to be compatible with having a region in which no charge is collected centred on the electrode columns and of radius 7.6±0.6μm. Charge collection above and below the columnar electrodes in the double-sided 3D sensor is observed.

Super-radiation hard particle tracking at the CERN SLHC

The proposed upgrade of the CERN Large Hadron Collider to ten times brighter luminosity poses severe challenges to semiconductor detectors within the CERN experiments. We investigate a silicon 3-D detector design for these conditions and semiconductors alternative to silicon, namely silicon carbide and gallium nitride. Charge collection measurements suggest some degree of additional radiation tolerance over conventional detector geometry and materials.