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Dive into the research topics where C. Tromas is active.

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Featured researches published by C. Tromas.


Journal of Applied Physics | 2005

Swelling of SiC under helium implantation

S. Leclerc; A. Declémy; M. F. Beaufort; C. Tromas; J. F. Barbot

Single crystals 4H-SiC were implanted with 50 keV helium ions at temperatures up to 600 °C and fluences in the range 1×1016–1×1017cm−2. The helium implantation-induced swelling was studied through the measurement of the step height. The different contributions of swelling were determined by combining simulations of x-ray diffraction curves and transmission electron microscopy observations. At room temperature, amorphization occurs between 1 and 2×1016cm−2, inducing the decrease in density of about 15%. For high-temperature implants, amorphization does not occur. The strain profiles show saturation in the near-surface region, indicating that a threshold concentration of defects is reached. All the additional point defects created during the implantation have been supposed to annihilate. In the region of high-energy deposition density, the value of strain increases with fluence up to values larger than 6%. The elastic contribution to swelling has been obtained by integration of the strain profile determined...


Acta Materialia | 2003

Study of the dislocation structure involved in a nanoindentation test by atomic force microscopy and controlled chemical etching

Y. Gaillard; C. Tromas; J. Woirgard

In this paper, it is shown that combining AFM, chemical etching and controlled polishing, progressively removing thin layers of material, allows a three-dimensional reconstruction of the volume distribution of dislocations about and under nanoindentation imprints. To illustrate the method, results obtained in MgO, a material known for its simple plasticity, have been selected. It is shown, comparing surface deformation and etching pattern, that the entire dislocation distribution associated with small indents can be analysed in terms of individual dislocations, leading to a better understanding of the elementary mechanisms of plasticity associated with the early stages of indents formation in crystalline material.


Philosophical Magazine Letters | 2003

Pop-in phenomenon in MgO and LiF: Observation of dislocation structures

Y. Gaillard; C. Tromas; J. Woirgard

This letter is based on recent progress in the observation of dislocation distributions around nanoindentations by chemical etching. This so-called nanoetching technique is used to determine the dislocation mechanisms associated with the pop-in phenomenon in MgO and LiF. Successive stages of highly controlled chemomechanical polishing have revealed that these dislocations are half-loops lying in the classical slip systems of MgO or LiF. However, they do not extend on the surface in the classical rosette-arms pattern but stay concentrated around the imprint. A mechanism of dislocation interactions, enhanced by the fact that the dislocations are suddenly nucleated in a small volume, is proposed to explain this specific distribution.


Philosophical Magazine | 2000

Study by atomic force microscopy of elementary deformation mechanisms involved in low load indentations in MgO crystals

C. Tromas; J. C. Girard; J. Woirgard

Abstract Nanoindentations have been performed at very low load in (001) MgO single crystals. The surface deformation has been investigated by atomic force microscopy, and the rosette arms pattern, induced by the glide of only a few dislocations, has been observed. Moreover, surrounding steps, oriented along the ⟨100⟩ directions, have been identified and associated with the early stage of the formation of the square shaped slip lines pattern commonly observed in the case of microindentation performed under very high loads. The fine structure of these surrounding steps has been resolved clearly, and a mechanism has been proposed based upon interaction between dislocations belonging, respectively, to edge and screw rosette arms and upon the activation of a ⟨011⟩(211) secondary glide system.


Philosophical Magazine | 2006

Nucleation of dislocations during nanoindentation in MgO

C. Tromas; Y. Gaillard; J. Woirgard

This study investigates the incipient plasticity during a nanoindentation test with a spherical indenter in magnesium oxide single crystals. The load–displacement curves show multiple pop-ins, interspaced by elastic deformation, and reveal the transition from an initial elastic deformation regime to a continuous elastoplastic one. Nanoindentations have been stopped after the first pop-in and the dislocation structures have been three-dimensionally characterized by AFM observations of the surface deformation and by nanoetching. The dislocation pattern shows two activated slip systems. The resolved shear stress has been calculated just before the pop-in, for all of the activated slip systems. The final positions of the dislocations generated during the first pop-in reveal that they were all nucleated at the point of maximum resolved shear stress.


Philosophical Magazine | 2011

Slip line analysis around nanoindentation imprints in Ti3SnC2: a new insight into plasticity of MAX-phase materials

C. Tromas; P. Villechaise; V. Gauthier-Brunet; Sylvain Dubois

The plasticity of Ti3SnC2, a recently synthesized MAX phase, was investigated. Localized deformation was induced by nanoindentation in a polycrystalline sample, and the resulting surface topography was observed by atomic force microscopy (AFM). For several grains, buckling around the indent was observed, in agreement with the kink band deformation process often reported for MAX-phase materials. For other grains, slip lines have been revealed by AFM. The corresponding slip systems have been identified through the determination of the local crystalline orientation by electron backscatter diffraction. First- and second-order pyramidal slip systems are shown to be active for some grain orientations, as well as dislocation interactions and cross slip from one system to the other.


Philosophical Magazine | 2012

Dislocation analysis of Ti2AlN deformed at room temperature under confining pressure

Antoine Guitton; Anne Joulain; L. Thilly; C. Tromas

Compression experiments of the brittle MAX phase Ti2AlN were performed under confining gas pressure at room temperature. Subsequently, a complete dislocation analysis was performed by transmission electron microscopy. In particular, the Burgers vectors and the dislocation lines were studied via the weak beam technique: dislocation reactions are reported for the first time in a MAX phase, as well as dipole interactions. Footprints of a high lattice friction were also observed. All these features point towards classical dislocation activity, eventually leading to hardening.


Philosophical Magazine | 2013

Pressure-enforced plasticity in MAX phases: from single grain to polycrystal investigation

Guo‐Ping Bei; Antoine Guitton; Anne Joulain; Véronique Brunet; Sylvain Dubois; L. Thilly; C. Tromas

Ti4AlN3, Ti3AlC2 and Ti3Al0.8Sn0.2C2 MAX phases were plastically deformed at room temperature (RT) under gaseous confining pressure. Microstructures of as-grown and deformed samples are carefully analysed using scanning electron microscopy (SEM), atomic force microscopy (AFM) and transmission electron microscopy (TEM). It is demonstrated that high level of plastic deformation can be reached under confining gas pressure; the later suppresses the brittle failure at RT to the profit of plasticity. Multiscale characterization techniques are shown to provide a unique insight into all the scales of the plastic deformation; in particular, the effect of the mesoscale. Indeed, grain shape and orientation relative to the compression axis are shown to play a key role in the deformation process, intergranular stresses leading to a complex stress field in the polycrystalline samples. The TEM results show that dislocation activity highly depends on the grain orientation. The observation of dislocation entanglements unambiguously demonstrates that dislocations may be organized in such a configuration so that their glide in the basal plane can be hindered when deep plastic regime is reached.


Scientific Reports | 2015

Evidence of dislocation cross-slip in MAX phase deformed at high temperature

Antoine Guitton; Anne Joulain; L. Thilly; C. Tromas

Ti2AlN nanolayered ternary alloy has been plastically deformed under confining pressure at 900°C. The dislocation configurations of the deformed material have been analyzed by transmission electron microscopy. The results show a drastic evolution compared to the dislocation configurations observed in the Ti2AlN samples deformed at room temperature. In particular, they evidence out-of-basal-plane dislocations and interactions. Moreover numerous cross-slip events from basal plane to prismatic or pyramidal planes are observed. These original results are discussed in the context of the Brittle-to-Ductile Transition of the nanolayered ternary alloys.


Philosophical Magazine | 2015

Dislocation modelling in Ti2AlN MAX phase based on the Peierls–Nabarro model

Karine Gouriet; Philippe Carrez; Patrick Cordier; Antoine Guitton; Anne Joulain; L. Thilly; C. Tromas

In this study, we determined the core structure and the Peierls stress of dislocations in Ti2AlN MAX phase. We use a generalized Peierls–Nabarro model, called Peierls–Nabarro–Galerkin (PNG), coupled with first principles calculations of generalized stacking fault (GSF). The GSF calculations show that dislocation glide in the basal plane will occur preferentially between M (here Ti) and A (here Al) planes. Additionally, the results of PNG calculations demonstrate that whatever the dislocation character, dislocations are dissociated in the basal plane, with a dissociation distance below the experimental resolution of transmission electron microscopy observations. Finally, the Peierls stress calculations show that the edge and screw characters are the easiest characters to glide in the basal plane.

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V. Audurier

University of Poitiers

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J. Woirgard

University of Poitiers

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A. Declémy

University of Poitiers

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L. Thilly

University of Poitiers

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A. Michel

University of Poitiers

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