C. W. Schneider

Superconducting interfaces between insulating oxides.

At interfaces between complex oxides, electronic systems with unusual electronic properties can be generated. We report on superconductivity in the electron gas formed at the interface between two insulating dielectric perovskite oxides, LaAlO3 and SrTiO3. The behavior of the electron gas is that of a two-dimensional superconductor, confined to a thin sheet at the interface. The superconducting transition temperature of ≅ 200 millikelvin provides a strict upper limit to the thickness of the superconducting layer of ≅ 10 nanometers.

Enhanced supercurrent density in polycrystalline YBa2Cu3O7-δ at 77 K from calcium doping of grain boundaries

With the discovery of high-temperature superconductivity, it seemed that the vision of superconducting power cables operating at the boiling point of liquid nitrogen (77 K) was close to realization. But it was soon found that the critical current density Jc of the supercurrents that can pass through these polycrystalline materials without destroying superconductivity is remarkably small. In many materials, Jc is suppressed at grain boundaries, by phenomena such as interface charging and bending of the electronic band structure. Partial replacement (‘doping’) of the yttrium in YBa2Cu3O7-δ with calcium has been used to increase grain-boundary Jc values substantially, but only at temperatures much lower than 77 K (ref. 9). Here we show that preferentially overdoping the grain boundaries, relative to the grains themselves, yields values of J c at 77 K that far exceed previously published values. Our results indicate that grain-boundary doping is a viable approach for producing a practical, cost-effective superconducting power cable operating at liquid-nitrogen temperatures.

Profiling the Interface Electron Gas of LaAlO3/SrTiO3 Heterostructures with Hard X-Ray Photoelectron Spectroscopy

The conducting interface of LaAlO3/SrTiO3 heterostructures has been studied by hard x-ray photoelectron spectroscopy. From the Ti 2p signal and its angle dependence we derive that the thickness of the electron gas is much smaller than the probing depth of 4 nm and that the carrier densities vary with increasing number of LaAlO3 overlayers. Our results point to an electronic reconstruction in the LaAlO3 overlayer as the driving mechanism for the conducting interface and corroborate the recent interpretation of the superconducting ground state as being of the Berezinskii-Kosterlitz-Thouless type.

Interface superconductor with gap behaviour like a high-temperature superconductor

The physics of the superconducting state in two-dimensional (2D) electron systems is relevant to understanding the high-transition-temperature copper oxide superconductors and for the development of future superconductors based on interface electron systems. But it is not yet understood how fundamental superconducting parameters, such as the spectral density of states, change when these superconducting electron systems are depleted of charge carriers. Here we use tunnel spectroscopy with planar junctions to measure the behaviour of the electronic spectral density of states as a function of carrier density, clarifying this issue experimentally. We chose the conducting LaAlO3–SrTiO3 interface as the 2D superconductor, because this electron system can be tuned continuously with an electric gate field. We observed an energy gap of the order of 40 microelectronvolts in the density of states, whose shape is well described by the Bardeen–Cooper–Schrieffer superconducting gap function. In contrast to the dome-shaped dependence of the critical temperature, the gap increases with charge carrier depletion in both the underdoped region and the overdoped region. These results are analogous to the pseudogap behaviour of the high-transition-temperature copper oxide superconductors and imply that the smooth continuation of the superconducting gap into pseudogap-like behaviour could be a general property of 2D superconductivity.

Design and realization of an all d-wave dc π-superconducting quantum interference device

The predominantly dx2−y2-pairing symmetry in most high-Tc superconductors provides the opportunity to fabricate Josephson junction circuits in which part of the junctions are biased by a phase difference of the superconducting order parameter of π. We present fabrication and measurements of an all high-Tc dc superconducting quantum interference device (dc SQUID) realized with thin-film technology, of which the Josephson junctions consist of one standard junction and one junction with a π-phase shift. The characteristics of the π-SQUID are compared with the properties of a standard high-Tc SQUID.

Evidence of Doping-Dependent Pairing Symmetry in Cuprate Superconductors

Scanning tunneling spectroscopy studies reveal long-range spatial homogeneity and predominantly d(x(2)-y(2))-pairing spectral characteristics in under- and optimally doped YBa2Cu 3O (7-delta) superconductors, whereas STS on YBa2(Cu 0.9934Zn 0.0026Mg (0.004))3O (6.9) exhibits microscopic spatial modulations and strong scattering near the Zn or Mg impurity sites, together with global suppression of the pairing potential. In contrast, in overdoped (Y 0.7Ca (0.3))Ba 2Cu 3O (7-delta), (d(x(2)-y(2))+s)-pairing symmetry is found, suggesting significant changes in the superconducting ground state at a critical doping value.

Microlithography of electron gases formed at interfaces in oxide heterostructures

Submicron wide structures of conducting quasi-two-dimensional electron gases generated at SrTiO3∕LaAlO3 interfaces have successfully been patterned by modulating the thickness of the LaAlO3 layers with unit cell resolution. This technique allows the authors to structure the electron gases without exposing them to the environment and without incorporating other materials at the edges. The structured electron gases have resistances of ≈200Ω∕◻ (4.2K) and mobilities of ≈700cm2∕Vs (4.2K), while the resistances of the areas patterned to be insulating exceed 1010Ω∕◻.

Tunable conductivity threshold at polar oxide interfaces

The physical mechanisms responsible for the formation of a two-dimensional electron gas at the interface between insulating SrTiO(3) and LaAlO(3) have remained a contentious subject since its discovery in 2004. Opinion is divided between an intrinsic mechanism involving the build-up of an internal electric potential due to the polar discontinuity at the interface between SrTiO(3) and LaAlO(3), and extrinsic mechanisms attributed to structural imperfections. Here we show that interface conductivity is also exhibited when the LaAlO(3) layer is diluted with SrTiO(3), and that the threshold thickness required to show conductivity scales inversely with the fraction of LaAlO(3) in this solid solution, and thereby also with the layers formal polarization. These results can be best described in terms of the intrinsic polar-catastrophe model, hence providing the most compelling evidence, to date, in favour of this mechanism.

Strain-Induced Ferromagnetism in Antiferromagnetic LuMnO3 Thin Films

Single phase and strained LuMnO(3) thin films are discovered to display coexisting ferromagnetic and antiferromagnetic orders. A large moment ferromagnetism (≈1μ(B)), which is absent in bulk samples, is shown to display a magnetic moment distribution that is peaked at the highly strained substrate-film interface. We further show that the strain-induced ferromagnetism and the antiferromagnetic order are coupled via an exchange field, therefore demonstrating strained rare-earth manganite thin films as promising candidate systems for new multifunctional devices.

Superconducting memory based on ferromagnetism

Answering to the need for dense superconducting memories, the authors propose a memory concept that combines ferromagnetic dots for the storage of the data and Josephson junctions for their readout. Good scalability is expected for large scale integration. Exploratory memory cells have been implemented using 3μm Nb technology and Permalloy dots. Nonvolatile data storage at 300K was demonstrated.