C. Wang

Fatigue in artificially layered Pb(Zr,Ti)O3 ferroelectric films

We have performed fatigue tests on lead zirconate titanate (PZT) multilayers having stacks of Pb(Zr0.8Ti0.2)O3/Pb(Zr0.2Ti0.8)O3 with repeated distances of 12 formula groups. The results are compared with single-layer n-type (0.5 at. % Ta-doped) PZT films. We conclude that fatigue is dominated by space-charge layers in each case, but that in the multilayer such space charge accumulates at the layer interfaces, rather than at the electrode–dielectric interface. The model, which includes both drift and diffusion, is quantitative and yields a rate-limiting mobility of 6.9±0.9×10−12 cm2/V s, in excellent agreement with the oxygen vacancy mobility for perovskite oxides obtained from Zafar et al.

Chaotic state to self-organized critical state transition of serrated flow dynamics during brittle-to-ductile transition in metallic glass

We study serrated flow dynamics during brittle-to-ductile transition induced by tuning the sample aspect ratio in a Zr-based metallic glass. The statistical analysis reveals that the serrated flow dynamics transforms from a chaotic state characterized by Gaussian-distribution serrations corresponding to stick-slip motion of randomly generated and uncorrelated single shear band and brittle behavior, into a self-organized critical state featured by intermittent scale-free distribution of shear avalanches corresponding to a collective motion of multiple shear bands and ductile behavior. The correlation found between serrated flow dynamics and plastic deformation might shed light on the plastic deformation dynamic and mechanism in metallic glasses.

Effects of rapid thermal annealing on the properties of GaNxAs1−x

We report the effect of rapid thermal annealing on the valence-band splitting behavior of GaNxAs1−x films grown by molecular beam epitaxy. The light- and heavy-hole valence-band splitting induced by the elastic strain is observed in both photomodulated reflectance and photoluminescence spectra for as-grown GaNxAs1−x epilayers. The valence-band splitting energy increases with the nitrogen composition. This splitting is decreased with the increase of annealing temperature by the rapid thermal annealing temperature process. These properties have been well explained by strain relaxation model including both in-plane strain at GaAs/GaNAs interface and internal strain in GaNAs epilayer. These strain effects have been confirmed by x-ray diffraction and Raman measurements.

Current oscillation and chaotic dynamics in superlattices driven by crossed electric and magnetic fields

We have theoretically studied current oscillation and chaotic dynamics in doped GaAsAlAs superlattices driven by crossed electric and magnetic fields. When the superlattice system is driven by a dc voltage, a stationary or dynamic electric-field domain can be obtained. We carefully studied the electric-field-domain dynamics and current self-oscillation which both display different modes with the change of magnetic field. When an ac electric field is also applied to the superlattice, a typical nonlinear dynamic system is constructed with the ac amplitude, ac frequency, and magnetic field as the control parameters. Different nonlinear behaviors show up when we tune the control parameters.

Specific Detection of Alpha-Fetoprotein Using AlGaAs/GaAs High Electron Mobility Transistors

Alpha-fetoprotein (AFP) is a typical tumor marker in early diagnosis. Highly specific detection of the AFP was demonstrated using AlGaAs/GaAs high electron mobility transistors (HEMTs). Anti-AFP antibody was immobilized to the Au-coated gate area of the HEMT by a covalent modification method. To avoid any nonspecific binding, the gate was blocked by bovine serum albumin after the reduction of the carbonyl group. A detection limit for the AFP as low as a few picograms/milliliter was achieved, and cross reactivity of the sensor was found negligible, demonstrating its high selectivity. Successful detection with minute quantity of the sample indicates that the sensor has great potential in practical screening for a wide population.

Terahertz radiation induced chaotic electron transport in semiconductor superlattices with a tilted magnetic field

Chaotic electron transport in semiconductor superlattice induced by terahertz electric field that is superimposed on a dc electric field along the superlattice axis are studied using the semiclassical motion equations including the effect of dissipation. A magnetic field that is tilted relative to the superlattice axis is also applied to the system. Numerical simulation shows that electrons in superlattice miniband exhibit complicate nonlinear oscillating modes with the influence of terahertz radiation. Transitions between frequency-locking and chaos via pattern forming bifurcations are observed with the varying of terahertz amplitude. It is found that the chaotic regions gradually contract as the dissipation increases. We attribute the appearance of complicate nonlinear oscillation in superlattice to the interaction between terahertz radiation and internal cooperative oscillating mode relative to Bloch oscillation and cyclotron oscillation.

Effect of in situ thermal treatment during growth on crystal quality of GaN epilayer grown on sapphire substrate by MOVPE

GaN epilayers on sapphire substrate grown by metalorganic vapor-phase epitaxy (MOVPE) in a horizontal-type low-pressure two-channel reactor were investigated. Samples were characterized by X-ray diffraction (XRD), Raman scattering, atomic force microscopy (AFM) and photoluminescence (PL) measurements. The influence of the temperature changes between low temperature (LT) deposited GaN buffer and high temperature (WT) grown GaN epilayer on crystal quality of epilayer was extensively studied. The effect of in situ thermal annealing during the growth on improving the GaN layer crystal quality was demonstrated and the possible mechanism involved in such a growth process was discussed

Transport properties in AlInSb/InAsSb heterostructures

Based on theoretical studies of transport properties in InAsSb-based quantum well heterostructures, we propose a material design for InAsSb quantum well with AlInSb barrier. Variation of electron mobility and two-dimensional electron gas concentration in AlyIn1−ySb/InAs1−xSbx heterostructures over the compositional range of which InAsSb is fully strained to AlInSb are investigated, where impact from dislocation scattering could be minimized. In comparison with InAs and InSb based quantum well heterostructures, InAsSb is advantageous in achieving the highest electron mobility despite of alloy disorder scattering. The maximum mobility of 37 000 cm2/V s is attainable in 15 nm InAs0.2Sb0.8 quantum well with Al0.24In0.76Sb barrier and there is great potential for further improvement. Our InAsSb based quantum well heterostructure is proved to be a robust structure for high-speed applications.

Noise temperature spectrum of hot electrons in semiconductor superlattices

The small signal response and thermal noise spectra in miniband superlattice are investigated. The properties of hot electron differential mobility, velocity fluctuation, and noise temperature are determined around a stationary condition. The field and frequency dependent drift velocity, electron energy, effective mass, and electron temperature are obtained. At low frequencies, noise temperature increases rapidly with the electric field. Our calculated noise temperatures for miniband superlattice are in good agreement with the experimental results, with the sample thickness estimated to be around 4 μm.

Detection of lead ions with AlGaAs/InGaAs pseudomorphic high electron mobility transistor

Lead poisoning is a serious environmental concern, which is a health threat. Existing technologies always have some drawbacks, which restrict their application ranges, such as real time monitoring. To solve this problem, glutathione was functionalized on the Au-coated gate area of the pseudomorphic high electron mobility transistor (pHEMT) to detect trace amounts of Pb2+. The positive charge of lead ions will cause a positive potential on the Au gate of the pHEMT sensor, which will increase the current between the source and the drain. The response range for Pb2+ detection has been determined in the concentrations from 0.1 pmol/L to 10 pmol/L. To our knowledge, this is currently the best result for detecting lead ions.