C. Y. Jin

p-doped 1.3 μm InAs/GaAs quantum-dot laser with a low threshold current density and high differential efficiency

A modification of the thickness of the low-growth-temperature component of the GaAs spacer layers in multilayer 1.3μm InAs∕GaAs quantum-dot (QD) lasers has been used to significantly improve device performance. For a p-doped seven-layer device, a reduction in the thickness of this component from 15to2nm results in a reduced reverse bias leakage current and an increase in the intensity of the spontaneous emission. In addition, a significant reduction of the threshold current density and an increase of the external differential efficiency at room temperature are obtained. These improvements indicate a reduced defect density, most probably a combination of the selective elimination of a very low density of dislocated dots and a smaller number of defects in the thinner low-growth-temperature component of the GaAs spacer layer.

Optical transitions in type-II InAs∕GaAs quantum dots covered by a GaAsSb strain-reducing layer

The excitation power dependence of the ground and excited state transitions in type-II InAs-GaAs0.78Sb0.22 quantum dot structure has been studied. Both transitions exhibit a strong blueshift with increasing excitation power but their separation remains constant. This behavior indicates a carrier-induced electric field oriented predominantly along the growth axis, which requires the holes to be localized in the GaAsSb above quantum dots. An accelerated blueshift of the ground state emission is observed once the excited state in the dots starts to populate. This behavior can be explained by a smaller spontaneous recombination coefficient for the excited state transition.

Observation and Modeling of a Room-Temperature Negative Characteristic Temperature 1.3-

A room-temperature negative characteristic temperature (T0 ) and ultralow threshold current density (Jth) of 48 Amiddotcm-2 are demonstrated for a 1.3-mum InAs quantum dot laser. These characteristics are obtained by combining a high-growth-temperature GaAs spacer layer with p-type modulation doping of the quantum dots in multiple layer dot-in-a-well structures. Through a comparison of p-doped and undoped devices, a photon coupling mechanism is proposed to account for the different temperature dependences of Jth for the two devices. Numerical simulations based on a rate equation model, which includes photon coupling between ground and excited quantum dot states, are performed. The simulations are able to account for the very different temperature-dependent Jth behavior of the doped and undoped device

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The use of a GaAsSb metamorphic buffer layer (MBL) is demonstrated to significantly enhance the room-temperature photoluminescence intensity for 1.55μm metamorphic InAs∕GaAs quantum dots (QDs) in comparison with a conventional InGaAs MBL. A dramatic reduction of QD photoluminescence emission efficiency above 1.5μm has been observed at room temperature when the indium composition in the InxGa1−xAs MBL is increased over x=0.25. By using a GaAsSb buffer instead of InGaAs, we demonstrate a strong enhancement of photoluminescence intensity of InAs∕GaAs QDs. The effects of the GaAsSb MBL can be understood in terms of smoothing the surface morphology of the buffer layer and, hence, suppressing the formation of dislocations in the QD region. These results suggest an alternative approach to developing GaAs-based light sources in the telecommunication-wavelength range near 1.55μm.

m p-Type Modulation-Doped Quantum-Dot Laser

Self-assembled InAs/GaAs quantum dots (QDs) incorporated in an asymmetric GaAs/Al0.8Ga0.2As vertical cavity have been employed as an optical nonlinear medium for reflection-type all-optical switches. Switching time down to 23 ps together with wavelength tuning range over 30 nm have been achieved in this structure. An angle-dependent behavior of the switching time has been observed, which suggests there is a coupling mechanism between the ground and excited states in QDs with different sizes.

1.55μm InAs quantum dots grown on a GaAs substrate using a GaAsSb metamorphic buffer layer

The radiative interaction of solid-state emitters with cavity fields is the basis of semiconductor microcavity lasers and cavity quantum electrodynamics (CQED) systems. Its control in real time would open new avenues for the generation of non-classical light states, the control of entanglement and the modulation of lasers. However, unlike atomic CQED or circuit quantum electrodynamics, the real-time control of radiative processes has not yet been achieved in semiconductors because of the ultrafast timescales involved. Here we propose an ultrafast non-local moulding of the vacuum field in a coupled-cavity system as an approach to the control of radiative processes and demonstrate the dynamic control of the spontaneous emission (SE) of quantum dots (QDs) in a photonic crystal (PhC) cavity on a ∼ 200 ps timescale, much faster than their natural SE lifetimes.

Vertical-geometry all-optical switches based on InAs/GaAs quantum dots in a cavity

A detailed model for semiconductor linear optical amplifiers (LOAs) with gain clamping by a vertical laser field is presented, which accounts the carrier and photon density distribution in the longitudinal direction as well as the facet reflectivity. The photon iterative method is used in the simulation with output amplified spontaneous emission spectrum in the wide band as iterative variables. The gain saturation behaviors and the noise figure are numerically simulated, and the variation of longitudinal carrier density with the input power is presented which is associated with the on-off state of the vertical lasers. The results show that the LOA can have a gain spectrum clamped in a wide wavelength range and have almost the same value of noise figure as that of conventional semiconductor optical amplifiers (SOAs). Numerical results also show that an LOA can have a noise figure about 2 dB less than that of the SOA gain clamped by a distributed Bragg reflector laser.

Ultrafast non-local control of spontaneous emission

Focusing and guiding light into semiconductor nano-structures can deliver revolutionary concepts for photonic devices, which offer a practical pathway towards next-generation power-efficient optical networks. In this review, we consider the prospects for photonic switches using semiconductor quantum dots (QDs) and photonic cavities which possess unique properties based on their low dimensionality. The optical nonlinearity of such photonic switches is theoretically analysed by introducing the concept of a field enhancement factor. This approach reveals a drastic improvement in both power-density and speed, which is able to overcome the limitations that have beset conventional photonic switches for decades. In addition, the overall power consumption is reduced due to the atom-like nature of QDs, as well as the nano-scale footprint of photonic cavities. Based on this theoretical perspective, the current state-of-the-art QD/cavity switches are reviewed in terms of various optical nonlinearity phenomena that have been utilized to demonstrate photonic switching. Emerging techniques, enabled by cavity nonlinear effects such as wavelength tuning, Purcell-factor tuning and plasmonic effects, are also discussed.

Detailed model and investigation of gain saturation and carrier spatial hole burning for a semiconductor optical amplifier with gain clamping by a vertical laser field

We have investigated the carrier tunneling process in a quantum-dot (QD) tunnel injection structure, which employs a GaAs1−xNx quantum well (QW) as a carrier injector. The influence of the barrier thickness between the GaAs1−xNx well and InAs dot layer has been studied by temperature-dependent photoluminescence. Although the 2.5 nm barrier sample exhibits the best tunneling efficiency, a 3.0 nm thickness for the barrier is optimum to retain good optical properties. The carrier capture time from the GaAs1−xNx QW to QD ground states has been evaluated by time-resolved photoluminescence. The result indicates that efficient carrier tunneling occurs at temperatures above 150 K due to the temperature dependent nature of phonon-assisted processes.

Photonic switching devices based on semiconductor nano-structures

The authors report the creation of low reflectivity angled facets by focused-ion-beam postfabrication etching. A method to directly measure the effective facet reflectivity of such facets, utilizing gain saturation effects in the quantum dots is described. The reflectivities of the angled facets are shown to decrease by increasing the facet angle from 0° to 15°. With a reflectivity of <1×10−6 obtained for a facet with a 15° angle, allowing quantum dot superluminescent light-emitting diodes to be fabricated. The use of different angled facets to control the emission wavelength of both quantum dot lasers and superluminescent light-emitting diodes is outlined.