Can-Li Song

Interface-Induced High-Temperature Superconductivity in Single Unit-Cell FeSe Films on SrTiO3

We report high transition temperature superconductivity in one unit-cell (UC) thick FeSe films grown on a Se-etched SrTiO3 (001) substrate by molecular beam epitaxy (MBE). A superconducting gap as large as 20 meV and the magnetic field induced vortex state revealed by in situ scanning tunneling microscopy (STM) suggest that the superconductivity of the 1 UC FeSe films could occur around 77 K. The control transport measurement shows that the onset superconductivity temperature is well above 50 K. Our work not only demonstrates a powerful way for finding new superconductors and for raising TC, but also provides a well-defined platform for systematic studies of the mechanism of unconventional superconductivity by using different superconducting materials and substrates.

Landau quantization of topological surface states in Bi2Se3.

1 Department of Physics, Tsinghua University, Beijing 100084, China 2 Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China 3 Microsoft Research, Station Q, University of California, Santa Barbara, CA 93106, USA 4 Department of Physics, Stanford University, Stanford CA 94305, USA 5 Physikalisches Institut, Universität Würzburg, D-97074 Würzburg, Germany * These authors contributed equally to this work. ¶ To whom correspondence should addressed. Email: xc@mail.tsinghua.edu.cn, xcma@aphy.iphy.ac.cn

Direct observation of nodes and twofold symmetry in FeSe superconductor.

Scanning tunneling spectroscopy suggests an orbital ordering mechanism for electron pairing in an iron-based superconductor. We investigated the electron-pairing mechanism in an iron-based superconductor, iron selenide (FeSe), using scanning tunneling microscopy and spectroscopy. Tunneling conductance spectra of stoichiometric FeSe crystalline films in their superconducting state revealed evidence for a gap function with nodal lines. Electron pairing with twofold symmetry was demonstrated by direct imaging of quasiparticle excitations in the vicinity of magnetic vortex cores, Fe adatoms, and Se vacancies. The twofold pairing symmetry was further supported by the observation of striped electronic nanostructures in the slightly Se-doped samples. The anisotropy can be explained in terms of the orbital-dependent reconstruction of electronic structure in FeSe.

Giant piezoelectric d33 coefficient in ferroelectric vanadium doped ZnO films

A giant electromechanical d33 coefficient 110pC∕N is obtained in ferroelectric V-doped ZnO films, which is nearly one order of magnitude higher than that of undoped samples. It is considered that the switchable spontaneous polarization induced by V dopants and the accompanying relatively high permittivity should be responsible for the enhancement of piezoelectric response. Moreover, from another point of view, an easier rotation of V–O bonds which are noncollinear with c axis under electric field might be the microscopic origin of this anomaly. The improved piezoelectric properties could make V-doped ZnO a promising candidate for piezoelectric devices.

Phase separation and magnetic order in K-doped iron selenide superconductor

The discovery that potassium-doped iron selenide undergoes phase separation into a defect-free superconducting phase and an iron-vacancy-ordered insulating phase resolves many questions about the unusual behaviour of this iron-based superconductor.

Topological insulator Bi2Se3 thin films grown on double-layer graphene by molecular beam epitaxy

Atomically flat thin films of topological insulator Bi2Se3 have been grown on double-layer graphene formed on 6H–SiC(0001) substrate by molecular beam epitaxy. By a combined study of reflection high energy electron diffraction and scanning tunneling microscopy, we identified the Se-rich condition and temperature criterion for layer-by-layer growth of epitaxial Bi2Se3 films. The as-grown films without doping exhibit a low defect density of 1.0±0.2×1011/cm2, and become a bulk insulator at a thickness of ten quintuple layers, as revealed by in situ angle resolved photoemission spectroscopy measurement.Atomically flat thin films of topological insulator Bi{sub 2}Se{sub 3} have been grown on double-layer graphene formed on 6H-SiC(0001) substrate by molecular beam epitaxy. By a combined study of reflection high energy electron diffraction and scanning tunneling microscopy, we identified the Se-rich condition and temperature criterion for layer-by-layer growth of epitaxial Bi{sub 2}Se{sub 3} films. The as-grown films without doping exhibit a low defect density of 1.0{+-}0.2x10{sup 11}/cm{sup 2}, and become a bulk insulator at a thickness of ten quintuple layers, as revealed by in situ angle resolved photoemission spectroscopy measurement.

Landau quantization and the thickness limit of topological insulator thin films of Sb2Te3.

We report the experimental observation of Landau quantization of molecular beam epitaxy grown Sb{2}Te{3} thin films by a low-temperature scanning tunneling microscope. Different from all the reported systems, the Landau quantization in a Sb{2}Te{3} topological insulator is not sensitive to the intrinsic substitutional defects in the films. As a result, a nearly perfect linear energy dispersion of surface states as a 2D massless Dirac fermion system is achieved. We demonstrate that four quintuple layers are the thickness limit for a Sb{2}Te{3} thin film being a 3D topological insulator. The mechanism of the Landau-level broadening is discussed in terms of enhanced quasiparticle lifetime.

Luminescence and Raman scattering properties of Ag-doped ZnO films

Ag-doped ZnO films were prepared by direct current reactive magnetron sputtering using a zinc target with various Ag-chips attached. The influence of Ag doping on the microstructure, photoluminescence and Raman scattering of ZnO films were systematically investigated. The results indicate that ZnO films doped with Ag can still retain a wurtzite structure, although the c-axis as preferred orientation is decreased by Ag doping. The near band edge emission of ZnO film can be enhanced by Ag doping with a concentration of 1.6–2.8 at.% and quench with a further increase in the Ag concentration. A local vibrational mode at 411 cm−1 induced by Ag dopant can be observed in the Raman spectra of the Ag-doped ZnO films, which might be used as an indication of Ag incorporation into the ZnO lattice.

Fermi-level tuning of epitaxial Sb2Te3 thin films on graphene by regulating intrinsic defects and substrate transfer doping.

High-quality Sb2Te3 films are obtained by molecular beam epitaxy on a graphene substrate and investigated by in situ scanning tunneling microscopy and spectroscopy. Intrinsic defects responsible for the natural p-type conductivity of Sb2Te3 are identified to be the Sb vacancies and Sb(Te) antisites in agreement with first-principles calculations. By minimizing defect densities, coupled with a transfer doping by the graphene substrate, the Fermi level of Sb2Te3 thin films can be tuned over the entire range of the bulk band gap. This establishes the necessary condition to explore topological insulator behaviors near the Dirac point.

Local Fe structure and ferromagnetism in Fe-doped ZnO films

The local Fe structure and corresponding ferromagnetism are different for various concentrations of Fe-doped ZnO (Zn1?xFexO, x = 0?0.07) films, which are prepared on LiNbO3(104) substrates by reactive magnetron sputtering. X-ray photoelectron spectroscopy and x-ray absorption near-edge structure (XANES) reveal that, when x?0.04, Fe is in the 2+ state and is incorporated into the wurtzite lattice of ZnO, and as x increases further, a second phase Fe3O4 is induced. Furthermore, full multiple-scattering substitution ab?initio calculation of Fe?K-edge XANES is used to confirm the local structure of Fe in films with different x. The single-phase Fe-doped ZnO films (x?0.04) exhibit ferromagnetism above room temperature and the mechanism of bound magnetic polarons (BMPs) is proposed to discuss the magnetic properties. The presence of the second phase is responsible for the strong ferromagnetism for higher Fe concentration.