Canute Vaz
National Institute of Standards and Technology
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Publication
Featured researches published by Canute Vaz.
ACS Nano | 2014
Arvind Balijepalli; Jessica Ettedgui; Andrew T. Cornio; Joseph W. F. Robertson; Kin P. Cheung; John J. Kasianowicz; Canute Vaz
We developed a generalized technique to characterize polymer–nanopore interactions via single channel ionic current measurements. Physical interactions between analytes, such as DNA, proteins, or synthetic polymers, and a nanopore cause multiple discrete states in the current. We modeled the transitions of the current to individual states with an equivalent electrical circuit, which allowed us to describe the system response. This enabled the estimation of short-lived states that are presently not characterized by existing analysis techniques. Our approach considerably improves the range and resolution of single-molecule characterization with nanopores. For example, we characterized the residence times of synthetic polymers that are three times shorter than those estimated with existing algorithms. Because the molecule’s residence time follows an exponential distribution, we recover nearly 20-fold more events per unit time that can be used for analysis. Furthermore, the measurement range was extended from 11 monomers to as few as 8. Finally, we applied this technique to recover a known sequence of single-stranded DNA from previously published ion channel recordings, identifying discrete current states with subpicoampere resolution.
IEEE Electron Device Letters | 2015
Bijesh Rajamohanan; Rahul Pandey; Varistha Chobpattana; Canute Vaz; David J. Gundlach; Kin P. Cheung; John S. Suehle; Susanne Stemmer; Suman Datta
In this letter, we demonstrate using fast current-voltage measurements, low switching slope of 64 mV/decade over a drain current range between
Analytical Chemistry | 2015
Jason P. Campbell; Jason T. Ryan; Pragya R. Shrestha; Zhanglong Liu; Canute Vaz; Jihong Kim; Vasileia Georgiou; Kin P. Cheung
10^{\mathrm {\mathbf {-3}}}
IEEE Transactions on Electron Devices | 2014
Jiwu Lu; Guangfan Jiao; Canute Vaz; Jason P. Campbell; Jason T. Ryan; Kin P. Cheung; Gennadi Bersuker; Chadwin D. Young
and
symposium on vlsi technology | 2014
Pragya R. Shrestha; David M. Nminibapiel; Jason P. Campbell; Jihong Kim; Canute Vaz; Kin P. Cheung; Helmut Baumgart
2 \times 10^{\mathrm {\mathbf {-2}}} \mu
symposium on vlsi technology | 2014
Jiwu Lu; Canute Vaz; Jason P. Campbell; Jason T. Ryan; Kin P. Cheung; Guangfan Jiao; Gennadi Bersuker; Chadwin D. Young
A/
ACS Nano | 2015
Arvind Balijepalli; Jessica Ettedgui; Andrew T. Cornio; Joseph W. F. Robertson; Kin P. Cheung; John J. Kasianowicz; Canute Vaz
\mu
AIP Advances | 2016
Canute Vaz; Changze Liu; Jason P. Campbell; Jason T. Ryan; Richard G. Southwick; David J. Gundlach; Anthony S. Oates; Ru Huang; Kin P. Cheung
m in staggered-gap In0.65Ga0.35As/GaAs0.4Sb0.6 tunneling field-effect transistors (TFETs) at
ieee international conference on solid state and integrated circuit technology | 2014
Kin P. Cheung; Jiwu Lu; Guangfan Jiao; Canute Vaz; Jason P. Campbell; Jason T. Ryan
\mathrm{V}_{\mathrm {\mathbf {DS}}}\,=\,0.5
Analytical Chemistry | 2016
Jacob H. Forstater; Kyle Briggs; Joseph W. F. Robertson; Jessica Ettedgui; Olivier Marie-Rose; Canute Vaz; John J. Kasianowicz; Vincent Tabard-Cossa; Arvind Balijepalli
V. This is achieved through a combination of low damage mesa sidewall etch and improvement in electrical quality of the high-