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Dive into the research topics where Carl H. Naylor is active.

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Featured researches published by Carl H. Naylor.


Nature Communications | 2015

Seeded growth of highly crystalline molybdenum disulphide monolayers at controlled locations

Gang Hee Han; Nicholas J. Kybert; Carl H. Naylor; Bum Su Lee; Jinglei Ping; Joo Hee Park; Jisoo Kang; Si Young Lee; Young Hee Lee; Ritesh Agarwal; A. T. Charlie Johnson

Monolayer transition metal dichalcogenides are materials with an atomic structure complementary to graphene but diverse properties, including direct energy bandgaps, which makes them intriguing candidates for optoelectronic devices. Various approaches have been demonstrated for the growth of molybdenum disulphide (MoS2) on insulating substrates, but to date, growth of isolated crystalline flakes has been demonstrated at random locations only. Here we use patterned seeds of molybdenum source material to grow flakes of MoS2 at predetermined locations with micrometre-scale resolution. MoS2 flakes are predominantly monolayers with high material quality, as confirmed by atomic force microscopy, transmission electron microscopy and Raman and photoluminescence spectroscopy. As the monolayer flakes are isolated at predetermined locations, transistor fabrication requires only a single lithographic step. Device measurements exhibit carrier mobility and on/off ratio that exceed 10 cm(2) V(-1) s(-1) and 10(6), respectively. The technique provides a path for in-depth physical analysis of monolayer MoS2 and fabrication of MoS2-based integrated circuits.


Nano Letters | 2015

Fano Resonance and Spectrally Modified Photoluminescence Enhancement in Monolayer MoS2 Integrated with Plasmonic Nanoantenna Array

Bumsu Lee; Joohee Park; Gang Hee Han; Ho-Seok Ee; Carl H. Naylor; Wenjing Liu; A. T. Charlie Johnson; Ritesh Agarwal

The manipulation of light-matter interactions in two-dimensional atomically thin crystals is critical for obtaining new optoelectronic functionalities in these strongly confined materials. Here, by integrating chemically grown monolayers of MoS2 with a silver-bowtie nanoantenna array supporting narrow surface-lattice plasmonic resonances, a unique two-dimensional optical system has been achieved. The enhanced exciton-plasmon coupling enables profound changes in the emission and excitation processes leading to spectrally tunable, large photoluminescence enhancement as well as surface-enhanced Raman scattering at room temperature. Furthermore, due to the decreased damping of MoS2 excitons interacting with the plasmonic resonances of the bowtie array at low temperatures stronger exciton-plasmon coupling is achieved resulting in a Fano line shape in the reflection spectrum. The Fano line shape, which is due to the interference between the pathways involving the excitation of the exciton and plasmon, can be tuned by altering the coupling strengths between the two systems via changing the design of the bowties lattice. The ability to manipulate the optical properties of two-dimensional systems with tunable plasmonic resonators offers a new platform for the design of novel optical devices with precisely tailored responses.


Nano Letters | 2016

Band Alignment and Minigaps in Monolayer MoS2-Graphene van der Waals Heterostructures

Debora Pierucci; Hugo Henck; José Avila; Adrian Balan; Carl H. Naylor; G. Patriarche; Yannick J. Dappe; Mathieu G. Silly; Fausto Sirotti; A. T. Charlie Johnson; Maria C. Asensio; Abdelkarim Ouerghi

Two-dimensional layered MoS2 shows great potential for nanoelectronic and optoelectronic devices due to its high photosensitivity, which is the result of its indirect to direct band gap transition when the bulk dimension is reduced to a single monolayer. Here, we present an exhaustive study of the band alignment and relativistic properties of a van der Waals heterostructure formed between single layers of MoS2 and graphene. A sharp, high-quality MoS2-graphene interface was obtained and characterized by micro-Raman spectroscopy, high-resolution X-ray photoemission spectroscopy (HRXPS), and scanning high-resolution transmission electron microscopy (STEM/HRTEM). Moreover, direct band structure determination of the MoS2/graphene van der Waals heterostructure monolayer was carried out using angle-resolved photoemission spectroscopy (ARPES), shedding light on essential features such as doping, Fermi velocity, hybridization, and band-offset of the low energy electronic dynamics found at the interface. We show that, close to the Fermi level, graphene exhibits a robust, almost perfect, gapless, and n-doped Dirac cone and no significant charge transfer doping is detected from MoS2 to graphene. However, modification of the graphene band structure occurs at rather larger binding energies, as the opening of several miniband-gaps is observed. These miniband-gaps resulting from the overlay of MoS2 and the graphene layer lattice impose a superperiodic potential.


Nano Letters | 2016

Strong Exciton–Plasmon Coupling in MoS2 Coupled with Plasmonic Lattice

Wenjing Liu; Bumsu Lee; Carl H. Naylor; Ho-Seok Ee; Joohee Park; A. T. Charlie Johnson; Ritesh Agarwal

We demonstrate strong exciton-plasmon coupling in silver nanodisk arrays integrated with monolayer MoS2 via angle-resolved reflectance microscopy spectra of the coupled system. Strong exciton-plasmon coupling is observed with the exciton-plasmon coupling strength up to 58 meV at 77 K, which also survives at room temperature. The strong coupling involves three types of resonances: MoS2 excitons, localized surface plasmon resonances (LSPRs) of individual silver nanodisks and plasmonic lattice resonances of the nanodisk array. We show that the exciton-plasmon coupling strength, polariton composition, and dispersion can be effectively engineered by tuning the geometry of the plasmonic lattice, which makes the system promising for realizing novel two-dimensional plasmonic polaritonic devices.


Scientific Reports | 2016

Large area molybdenum disulphide-epitaxial graphene vertical Van der Waals heterostructures

Debora Pierucci; Hugo Henck; Carl H. Naylor; Haikel Sediri; Emmanuel Lhuillier; Adrian Balan; Julien E. Rault; Yannick J. Dappe; F. Bertran; Patrick Le Fèvre; A. T. Charlie Johnson; Abdelkarim Ouerghi

Two-dimensional layered transition metal dichalcogenides (TMDCs) show great potential for optoelectronic devices due to their electronic and optical properties. A metal-semiconductor interface, as epitaxial graphene - molybdenum disulfide (MoS2), is of great interest from the standpoint of fundamental science, as it constitutes an outstanding platform to investigate the interlayer interaction in van der Waals heterostructures. Here, we study large area MoS2-graphene-heterostructures formed by direct transfer of chemical-vapor deposited MoS2 layer onto epitaxial graphene/SiC. We show that via a direct transfer, which minimizes interface contamination, we can obtain high quality and homogeneous van der Waals heterostructures. Angle-resolved photoemission spectroscopy (ARPES) measurements combined with Density Functional Theory (DFT) calculations show that the transition from indirect to direct bandgap in monolayer MoS2 is maintained in these heterostructures due to the weak van der Waals interaction with epitaxial graphene. A downshift of the Raman 2D band of the graphene, an up shift of the A1g peak of MoS2 and a significant photoluminescence quenching are observed for both monolayer and bilayer MoS2 as a result of charge transfer from MoS2 to epitaxial graphene under illumination. Our work provides a possible route to modify the thin film TDMCs photoluminescence properties via substrate engineering for future device design.


conference on lasers and electro optics | 2016

Optomechanical enhancement of doubly resonant 2D optical nonlinearity

Fei Yi; Ming-Liang Ren; Jason C Reed; Hai Zhu; Jiechang Hou; Carl H. Naylor; A. T. Johnson; Ritesh Agarwal; Ertugrul Cubukcu

We report 3300 times enhancement of second harmonic generation from a MoS2 monolayer by engineering the nonlinear light-matter interaction in a micro-electro-mechanical system enabled optical frequency doubling device based on an electrostatically tunable Fabry-Perot microresonator.


ACS Nano | 2016

Scalable Production of Molybdenum Disulfide Based Biosensors

Carl H. Naylor; Nicholas J. Kybert; Camilla Schneier; Jin Xi; Gabriela Romero; Jeffery G. Saven; Renyu Liu; A. T. Charlie Johnson

We demonstrate arrays of opioid biosensors based on chemical vapor deposition grown molybdenum disulfide (MoS2) field effect transistors (FETs) coupled to a computationally redesigned, water-soluble variant of the μ-opioid receptor (MOR). By transferring dense films of monolayer MoS2 crystals onto prefabricated electrode arrays, we obtain high-quality FETs with clean surfaces that allow for reproducible protein attachment. The fabrication yield of MoS2 FETs and biosensors exceeds 95%, with an average mobility of 2.0 cm(2) V(-1) s(-1) (36 cm(2) V(-1) s(-1)) at room temperature under ambient (in vacuo). An atomic length nickel-mediated linker chemistry enables target binding events that occur very close to the MoS2 surface to maximize sensitivity. The biosensor response calibration curve for a synthetic opioid peptide known to bind to the wild-type MOR indicates binding affinity that matches values determined using traditional techniques and a limit of detection ∼3 nM (1.5 ng/mL). The combination of scalable array fabrication and rapid, precise binding readout enabled by the MoS2 transistor offers the prospect of a solid-state drug testing platform for rapid readout of the interactions between novel drugs and their intended protein targets.


Nano Letters | 2017

Electrical Tuning of Exciton–Plasmon Polariton Coupling in Monolayer MoS2 Integrated with Plasmonic Nanoantenna Lattice

Bumsu Lee; Wenjing Liu; Carl H. Naylor; Joohee Park; Stephanie C. Malek; Jacob S. Berger; A. T. Charlie Johnson; Ritesh Agarwal

Active control of light-matter interactions in semiconductors is critical for realizing next generation optoelectronic devices with real-time control of the systems optical properties and hence functionalities via external fields. The ability to dynamically manipulate optical interactions by applied fields in active materials coupled to cavities with fixed geometrical parameters opens up possibilities of controlling the lifetimes, oscillator strengths, effective mass, and relaxation properties of a coupled exciton-photon (or plasmon) system. Here, we demonstrate electrical control of exciton-plasmon coupling strengths between strong and weak coupling limits in a two-dimensional semiconductor integrated with plasmonic nanoresonators assembled in a field-effect transistor device by electrostatic doping. As a result, the energy-momentum dispersions of such an exciton-plasmon coupled system can be altered dynamically with applied electric field by modulating the excitonic properties of monolayer MoS2 arising from many-body effects. In addition, evidence of enhanced coupling between charged excitons (trions) and plasmons was also observed upon increased carrier injection, which can be utilized for fabricating Fermionic polaritonic and magnetoplasmonic devices. The ability to dynamically control the optical properties of a coupled exciton-plasmonic system with electric fields demonstrates the versatility of the coupled system and offers a new platform for the design of optoelectronic devices with precisely tailored responses.


Applied Physics Letters | 2016

Electrolytic phototransistor based on graphene-MoS2 van der Waals p-n heterojunction with tunable photoresponse

Hugo Henck; Debora Pierucci; Julien Chaste; Carl H. Naylor; José Avila; Adrian Balan; Mathieu G. Silly; Maria C. Asensio; Fausto Sirotti; A. T. Charlie Johnson; Emmanuel Lhuillier; Abdelkarim Ouerghi

Van der Waals (vdW) heterostructures obtained by stacking 2D materials offer a promising route for next generation devices by combining different unique properties in completely new artificial materials. In particular, the vdW heterostructures combine high mobility and optical properties that can be exploited for optoelectronic devices. Since the p-n junction is one of the most fundamental units of optoelectronics, we propose an approach for its fabrication based on the intrinsic n doped MoS2 and the p doped bilayer graphene hybrid interfaces. We demonstrate the control of the photoconduction properties using electrolytic gating which ensures a low bias operation. We show that by finely choosing the doping value of each layer, the photoconductive properties of the hybrid system can be engineered to achieve magnitude and sign control of the photocurrent. Finally, we provide a simple phase diagram relating the photoconductive behavior with the chosen doping, which we believe can be very useful for the future design of the van der Waals based photodetectors.


Applied Physics Letters | 2015

Facile fabrication of a ultraviolet tunable MoS2/p-Si junction diode

William Serrano; Nicholas J. Pinto; Carl H. Naylor; Nicholas J. Kybert; A. T. Charlie Johnson

Chemical vapor deposition grown MoS2 single crystals were transferred onto the edge of a p-Si/SiO2 wafer, forming an abrupt heterogeneous junction diode at the MoS2/p-Si interface. When electrically characterized as a field effect transistor, MoS2 exhibits an n-type response and can be doped in the presence of ultraviolet (UV) light. As a diode, it operates satisfactorily in air, but has higher currents in vacuum with a turn on voltage of ∼1.3 V and an on/off ratio of 20 at ±2 V. UV irradiation increases the diode on state current, decreases the turn-on voltage, and reduces the ideality parameter below 2. These changes are reversible after annealing in air as desorption of electron trapping species like O2− and H2O− are believed responsible for this effect. A circuit integrating this diode was used to rectify a 1 kHz signal with an efficiency of 12%. Its simple design, coupled with the ability to clip AC signals, sense UV light, and reversibly tune these diodes, makes them inexpensive, multifunctional, an...

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Marija Drndic

University of Pennsylvania

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A. T. Johnson

University of Pennsylvania

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Adrian Balan

University of Pennsylvania

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William M. Parkin

University of Pennsylvania

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Hugo Henck

Université Paris-Saclay

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Jinglei Ping

University of Pennsylvania

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Paul Masih Das

University of Pennsylvania

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Ritesh Agarwal

University of Pennsylvania

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