Carsten Ahrens

High frequency power LDMOS technologies for base station applications status, potential, and benchmarking

LDMOS technologies based in G. Ma et al. (1996) and H. Brech et al. (2003) have been in dominate position in wireless base station applications for frequencies ranging from 450MHz to 2.7GHz for the last 10 years due to performance, cost, reliability, and power capability advantages. This paper reviews the leading edge LDMOS development at Infineon and discusses future potential and limitation for LDMOS technologies in general; benchmarking with alternative technologies is also presented

Discussion of ASi-Sii-Defect Model in Frame of Experimental Results on P Line in Indium Doped Silicon

Further experimental support for the ASi-Sii-defect as cause of light-induced degradation and as the defect responsible for a photoluminescence peak called P line in indium doped silicon is given. The ASi-Sii-defect model has two main implications related to oxygen clustering during Czochralski crystal growth and the common understanding of the boron interstitial defect. These implications are discussed and it is shown that the ASi-Sii-defect model is in agreement with available experimental data related to oxygen clustering and the boron interstitial defect.

Identification of photoluminescence P line in indium doped silicon as InSi-Sii defect

Indium and carbon co-implanted silicon was investigated by low-temperature photoluminescence spectroscopy. A photoluminescence peak in indium doped silicon (P line) was found to depend on the position of a silicon interstitial rich region, the existence of a SiNx:H/SiOx stack and on characteristic illumination and annealing steps. These results led to the conclusion that silicon interstitials are involved in the defect and that hydrogen impacts the defect responsible for the P line. By applying an unique illumination and annealing cycle we were able to link the P line defect with a defect responsible for degradation of charge carrier lifetime in indium as well as boron doped silicon. We deduced a defect model consisting of one acceptor and one silicon interstitial atom denoted by ASi-Sii, which is able to explain the experimental data of the P line as well as the light-induced degradation in indium and boron doped silicon. Using this model we identified the defect responsible for the P line as InSi-Sii in...