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advanced semiconductor manufacturing conference | 2008

Flex-ALD Lanthanum Materials for High-k/Metal-Gate Applications

Ce Ma; Kee-Chan Kim; Graham Anthony Mcfarlane; Atul Athalye

Lanthanum oxide films are deposited using Flex-ALDtrade solution-based precursor formulations via atomic layer deposition. A solid La precursor is dissolved in solvent blends and the solution precursor is delivered via direct liquid injection methods to a vaporizer that is connected to the ALD chamber. The fully vaporized solution precursor is then pulsed into the deposition chamber containing an in- situ quartz crystal microbalance (QCM). High-k bi-layers are formed by growing a La oxide ALD layer onto an HfO2 coated surface of a silicon wafer sample in the same ALD chamber. Composition analysis showed carbon and other contaminants are below 1 atomic %.

Archive | 2006

Method and apparatus for using solution based precursors for atomic layer deposition

Ce Ma; Qing Min Wang; Patrick Joseph Helly; Richard Allen Hogle

Archive | 2009

Method and apparatus for the production of high purity tungsten hexafluoride

Richard Allen Hogle; Ce Ma; Dennis Precourt; Walter Hugh Withlock; Donald Prentice Satchell

Archive | 2007