Cécile Autret-Lambert
François Rabelais University
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Publication
Featured researches published by Cécile Autret-Lambert.
Journal of Applied Physics | 2013
Joe Sakai; M. Zaghrioui; Vinh Ta Phuoc; Sylvain Roger; Cécile Autret-Lambert; Kunio Okimura
VO2 films were deposited on Pt (111)/TiO2/SiO2/Si (001) substrates by means of a pulsed laser deposition technique. An x-ray diffraction peak at 2θ = 39.9° was deconvoluted into two pseudo-Voigt profiles of Pt (111) and VOx-originated components. The VOx diffraction peak was more obvious in a VOx/Pt (111)/Al2O3 (0001) sample, having a narrower width compared with a VO2/Al2O3 (0001) sample. Temperature-controlled Raman spectroscopy for the VOx/Pt/TiO2/SiO2/Si sample has revealed the monoclinic VO2 phase at low temperature and the structural phase transition at about 72 °C in a heating process. The electronic conductive nature at the high temperature phase was confirmed by near normal incidence infrared reflectivity measurements. Out-of-plane current-voltage characteristics showed an electric field-induced resistance switching at a voltage as low as 0.2 V for a 50 nm-thick film. A survey of present and previous results suggests an experimental law that the transition voltage of VO2 is proportional to the sq...
Journal of Applied Physics | 2015
N. Jaber; J. Wolfman; C. Daumont; B. Negulescu; A. Ruyter; G. Feuillard; M. Bavencoffe; J. Fortineau; T. Sauvage; B. Courtois; H. Bouyanfif; J. L. Longuet; Cécile Autret-Lambert; François Gervais
The piezoelectric properties of compositional spread (1 − x)BiFeO3-xGaFeO3 epitaxial thin films are investigated where Ga3+ substitution for Bi3+ is attempted in Bi1−xGaxFeO3 compounds. Ga content x was varied from 0 to 12% (atomic). Ferroelectric characterizations are reported at various length scales. Around 6.5% of Ga content, an enhancement of the effective piezoelectric coefficient d33eff is observed together with a change of symmetry of the film. Measured d33eff values in 135 nm thick films increased from 25 pm/V for undoped BiFeO3 to 55 pm/V for 6.5% Ga with no extrinsic contribution from ferroelastic domain rearrangement.
Applied Physics Letters | 2018
C. Daumont; J. Wolfman; Cécile Autret-Lambert; P. Andreazza; Béatrice Negulescu
Room temperature manipulation of the ferromagnetic state via an electric field is investigated in Ni/BiFe0.95Mn0.05O3 thin film heterostructures. A 600% increase in the magnetic coercive field of the Ni layer is observed at the initial DC electrical poling of the ferroelectric BiFe0.95Mn0.05O3 layer. The magnetoelectric effect is remanent, and the magnetic coercive field can be modulated between a low value and a high value by successively switching the ferroelectric polarization. After the initial poling, the coercive field difference is decreased by subsequent back and forth switching. However, the magnetic bi-stability is preserved at least up to 250 cycles, which is promising for spintronic applications.
Journal of Solid State Chemistry | 2013
Cécile Autret-Lambert; Pascal Andreazza; Antoine Ruyter; Christophe Honstettre; Sébastien Lambert; François Gervais; Marc Lethiecq
Abstract Copper doped-Ba 4 Y Mn 3− x Cu x O 11.5± δ samples were synthesized by an organic gel assisted citrate process. X-ray diffraction of compositions with x =0.002, 0.005, 0.01, 0.02 and 0.04 does not reveal any change of hexagonal perovskite structure on doping. The effects of Cu-doping on the microstructure and dielectric properties were investigated. Cu doping modifies the electrical properties at the level of the impedance characteristics of both grain and grain boundary and to understand these different behaviours, we have carried out high-resolution transmission electron microscopy analysis. Among the Ba 4 Y Mn 3− x Cu x O 11.5± δ specimens studied, the composition x =0.002 shows a permittivity ( e ′ r ) higher than the undoped compound and a lower loss tangent (tan δ ) over several orders of magnitude of frequency.
Materials Research Bulletin | 2012
Fabian Delorme; Cécile Autret-Lambert; A. Seron; V. Jean-Prost
Abstract This study shows that between brucite (Mg(OH)2) and β-Co(OH)2, all the compositions are possible. The solid solution Mg1−xCox(OH)2 has been synthesized by an easy and fast coprecipitation route and characterized by XRD and TEM. Single phase powders have been obtained. The particles exhibit platelets morphology with a size close to one hundred nanometers. XRD analysis shows an evolution of the cell parameters when x increases and demonstrates that no ordering of the cations occurs. However, extra reflections on TEM electron diffraction patterns seem to indicate that local ordering can exist. The compounds issued from this solid solution could be good candidates as precursors in order to obtain Mg–Co mixed oxide with all possible cationic ratios.
Solid State Sciences | 2009
Virginie Brizé; Cécile Autret-Lambert; J. Wolfman; M. Gervais; Patrick Simon; François Gervais
Materials Research Bulletin | 2012
Tristan Barbier; Cécile Autret-Lambert; Christophe Honstrette; François Gervais; Marc Lethiecq
Journal of Solid State Chemistry | 2012
F. Giovannelli; Cécile Autret-Lambert; C. Mathieu; T. Chartier; Fabian Delorme; Alain Seron
Journal of Solid State Chemistry | 2006
Cécile Autret-Lambert; B. Pignon; M. Gervais; I. Monot-Laffez; A. Ruyter; L. Ammor; François Gervais; Jean-Marc Bassat; Rodolphe Decourt
Synthetic Metals | 2013
Chellalchamy Anbalagan Amarnath; Fouad Ghamouss; Bruno Schmaltz; Cécile Autret-Lambert; Sylvain Roger; François Gervais; François Tran-Van