Cédric Robert

Exciton radiative lifetime in transition metal dichalcogenide monolayers

We have investigated the exciton dynamics in transition metal dichalcogenide monolayers using time-resolved photoluminescence experiments performed with optimized time resolution. For

Excitonic Linewidth Approaching the Homogeneous Limit in MoS2 -Based van der Waals Heterostructures

\mathrm{MoS}{\mathrm{e}}_{2}

Spin-orbit engineering in transition metal dichalcogenide alloy monolayers

monolayer, we measure

Room temperature operation of GaAsP(N)/GaP(N) quantum well based light-emitting diodes: Effect of the incorporation of nitrogen

{\ensuremath{\tau}}_{\mathrm{rad}}^{0}=1.8\ifmmode\pm\else\textpm\fi{}0.2\phantom{\rule{0.16em}{0ex}}\mathrm{ps}

Double resonant Raman scattering and valley coherence generation in monolayer WSe_{2}.

at

Charged excitons in monolayer WSe2: Experiment and theory

T=7\phantom{\rule{0.16em}{0ex}}\mathrm{K}

In-Plane Propagation of Light in Transition Metal Dichalcogenide Monolayers: Optical Selection Rules

that we interpret as the intrinsic radiative recombination time. Similar values are found for

Discrete quantum dot like emitters in monolayer MoSe2: Spatial mapping, magneto-optics, and charge tuning

\mathrm{WS}{\mathrm{e}}_{2}

Atomistic calculations of Ga(NAsP)/GaP(N) quantum wells on silicon substrate: Band structure and optical gain

monolayers. Our detailed analysis suggests the following scenario: at low temperature

Ultra-low power threshold for laser induced changes in optical properties of 2D molybdenum dichalcogenides

(T\ensuremath{\lesssim}50\phantom{\rule{0.16em}{0ex}}\mathrm{K})