Celestino J. Gaeta

Continuous-wave self-pumped optical phase conjugation in atomic sodium vapor

Self-pumped optical phase conjugation has been demonstrated for the first time to our knowledge in a resonant atomic system. This process was implemented by using a single cw pump beam to excite a sodium-vapor oscillator. The counterpropagating optical fields inside this oscillator then combine with the pump beam in an internal fourwave-mixing interaction to yield the phase conjugate of the incident (pump) beam.

High-power x-ray point source for next-generation lithography

An x-ray power of 2.8 Watts at the 1 nm x-ray lithography wavelength was generated by a copper plasma formed by a single laser beam focused to an intensity of greater than 1014 W/cm2 on a copper tape target. The all solid state BritelightTM YAG laser has 700 ps pulse duration, 300 Hz pulse repetition rate, average power of 75 Watts, and less than 2 times diffraction limited beam quality at the fundamental 1.064 micrometer wavelength. The single beam laser system has a master oscillator, a preamplifier and one power amplifier, all diode pumped. Measurements confirmed negligible copper vapor debris at 8 cm from the laser-plasma source with atmospheric pressure He gas and modest gas flow. The point source x-ray radiation was collimated with either a polycapillary or grazing mirror collimator. The near-parallel beam of x-rays has good divergence both globally (0.5 mrad) and locally (less than 3 mrad), good uniformity (2% achievable goal) and large uniform field size (20 mm X 20 mm full field and 25 mm X 36 mm scanning system). High-resolution lithography was performed for the first time with collimated 1 nm point source x-rays. A power scaling system is being built with eight amplified beams in parallel on the x-ray target, and is expected to achieve 24 - 30 Watts of x-rays. A 16 beam laser plasma x-ray lithography system could achieve a throughput of 24 wafer levels per hour using 300 mm diameter wafers.

Optical real-time defect-enhancement diagnostic system.

We have demonstrated an all-optical diagnostic system that enhances the observation of defects in periodic structures. This real-time technique employs a spatial light modulator as a smart-pixel array for information processing in the Fourier transform plane of a lens. The system also includes a phase-conjugate mirror for autoalignment and for correction of optical wave-front aberrations that are imparted on the object light by the smart-pixel processor and its associated optical train.

Retromodulation/conjugation using a self-pumped atomic sodium phase-conjugate mirror.

A self-pumped atomic sodium phase-conjugate mirror was modified to include an amplitude modulator, which thus formed a device capable of encoding temporal information onto the phase-conjugate return beam. Modulation rates of as much as 4 MHz with modulation depths in the range of 70-90% (both limited by the electronics and the modulator) have been obtained by using an intracavity acousto-optic modulator.

Resonant self‐pumped phase conjugation in cesium vapor at 0.85 μm

We report the first observation of resonant self‐pumped phase conjugation at diode laser wavelengths. A phase conjugate reflectivity of 0.01%, and a cw threshold intensity of 75 W/cm2 were measured.

Coupled cw dye lasers using intracavity four-wave mixing.

An experimental investigation of laser-oscillator frequency locking by a four-wave interaction was conducted. An experiment was performed that successfully demonstrated the locking of two cw dye lasers using this concept with Na vapor serving as the nonlinear (coupling) medium.

High-power laser-plasma x-ray source for lithography

A compact x-ray source radiates 24 Watts average power of 1nm x-rays in 2 (pi) steradians. The laser produced plasma x-ray source has a 300 W laser driver which is a compact, diode-pumped solid-state Nd:YAG laser system. The x-ray conversion efficiency is 9 percent of the laser power delivered on target. The x-ray source was used to demonstrate x-ray lithography of 75 nm lines. The x-ray source is optimized for integration with a x-ray stepper to provide a complete x-ray lithography exposure tool for the manufacture of high-speed GaAs devices.

Single-pixel demonstration of innovative adaptive optics by use of a charge-transfer membrane light modulator

We have constructed and demonstrated a single-pixel implementation of an all-optical membrane-based spatial light modulator as a compact optical wave-front error correction device. High rates of response of as much as 20 kHz in an open-loop configuration were obtained. The device was then used in an adaptive-optics servo to compensate successfully for a 1-kHz sinusoidal phase error with a peak-to-peak excursion of approximately pi/7 rad. A small-signal servo gain of the order of 10 was inferred from the closed-loop measurements.

Analytical electrical model for a Si liquid crystal light valve.

An approximate analytical model has been developed which allows the voltage characteristics of the liquid crystal layer of a silicon liquid crystal light valve to be determined once the photocurrent level and device parameters have been specified. This model significantly decreases the computation time compared to current numerical techniques.

Advances in CPL, collimated plasma source, and full-field exposure for sub-100-nm lithography

In the world of micro- Lithography, several options exist for obtaining features below the 100nm level. Options include a variety of methods which range from additional process steps in etch, multilayer resist systems, or expensive throughput limited direct write E-beam systems. Each comes with a handful of trade offs in uniformity, repeatability and cost. Collimated (LASER) Plasma Lithography (CPL), on the other hand offers a full field exposure with minimal process intervention to obtain resolution below the 100nm barrier. CPL, uses a membrane 1x proximity mask and a collimated light source with energy peaking at 11 A°. By using a mask, an entire 22mm x 22mm field (30mm x 30mm with the next generation) can be exposed at once regardless of chip density, removing any throughput concerns as well as placement, stitching and typical E-beam machine flaw defects. Collimation, provides a predictable flux of energy to ensure minimal global divergence and energy level variation. Energy at 11 A°, allows for a high level of uniformity and penetration within the resist, without introducing resolution compromising scattering or standing wave effects. This Paper will demonstrate the capabilities of CPL as well as the advantages over traditional lithography in obtaining features below 100nm. We will also depict process techniques which take full advantage of improvements in CAR, and experiments which suggest reduction possibilities through variables in mask fabrication.