Chandra M. Natarajan

Superconducting nanowire single-photon detectors: physics and applications

Single-photon detectors based on superconducting nanowires (SSPDs or SNSPDs) have rapidly emerged as a highly promising photon-counting technology for infrared wavelengths. These devices offer high efficiency, low dark counts and excellent timing resolution. In this review, we consider the basic SNSPD operating principle and models of device behaviour. We give an overview of the evolution of SNSPD device design and the improvements in performance which have been achieved. We also evaluate device limitations and noise mechanisms. We survey practical refrigeration technologies and optical coupling schemes for SNSPDs. Finally we summarize promising application areas, ranging from quantum cryptography to remote sensing. Our goal is to capture a detailed snapshot of an emerging superconducting detector technology on the threshold of maturity.

Quantum-dot spin–photon entanglement via frequency downconversion to telecom wavelength

Long-distance quantum teleportation and quantum repeater technologies require entanglement between a single matter quantum bit (qubit) and a telecommunications (telecom)-wavelength photonic qubit. Electron spins in III–V semiconductor quantum dots are among the matter qubits that allow for the fastest spin manipulation and photon emission, but entanglement between a single quantum-dot spin qubit and a flying (propagating) photonic qubit has yet to be demonstrated. Moreover, many quantum dots emit single photons at visible to near-infrared wavelengths, where silica fibre losses are so high that long-distance quantum communication protocols become difficult to implement. Here we demonstrate entanglement between an InAs quantum-dot electron spin qubit and a photonic qubit, by frequency downconversion of a spontaneously emitted photon from a singly charged quantum dot to a wavelength of 1,560 nanometres. The use of sub-10-picosecond pulses at a wavelength of 2.2 micrometres in the frequency downconversion process provides the necessary quantum erasure to eliminate which-path information in the photon energy. Together with previously demonstrated indistinguishable single-photon emission at high repetition rates, the present technique advances the III–V semiconductor quantum-dot spin system as a promising platform for long-distance quantum communication.

On-chip quantum interference between silicon photon-pair sources

A silicon-on-insulator device combining two four-wave-mixing photon-pair sources in an interferometer with a reconfigurable phase shifter is used to create and manipulate non-degenerate or degenerate, path-entangled or path-unentangled photon pairs. A quantum interference visibility of nearly 100% is observed on-chip. This device is a first step towards fully integrated quantum technologies.

Enhanced telecom wavelength single-photon detection with NbTiN superconducting nanowires on oxidized silicon

Superconducting nanowire single-photon detectors (SNSPDs) have emerged as a highly promising infrared single-photon detector technology. Next-generation devices are being developed with enhanced detection efficiency (DE) at key technological wavelengths via the use of optical cavities. Furthermore, new materials and substrates are being explored for improved fabrication versatility, higher DE, and lower dark counts. We report on the practical performance of packaged NbTiN SNSPDs fabricated on oxidized silicon substrates in the wavelength range from 830 to 1700 nm. We exploit constructive interference from the SiO2/Si interface in order to achieve enhanced front-side fiber-coupled DE of 23.2 % at 1310 nm, at 1 kHz dark count rate, with 60 ps full width half maximum timing jitter.

Photon pair generation in a silicon micro-ring resonator with reverse bias enhancement

Photon sources are fundamental components for any quantum photonic technology. The ability to generate high count-rate and low-noise correlated photon pairs via spontaneous parametric down-conversion using bulk crystals has been the cornerstone of modern quantum optics. However, future practical quantum technologies will require a scalable integration approach, and waveguide-based photon sources with high-count rate and low-noise characteristics will be an essential part of chip-based quantum technologies. Here, we demonstrate photon pair generation through spontaneous four-wave mixing in a silicon micro-ring resonator, reporting separately a maximum coincidence-to-accidental (CAR) ratio of 602 ± 37 (for a generation rate of 827kHz), and a maximum photon pair generation rate of 123 MHz ± 11 kHz (with a CAR value of 37). To overcome free-carrier related performance degradations we have investigated reverse biased p-i-n structures, demonstrating an improvement in the pair generation rate by a factor of up to 2 with negligible impact on CAR.

Quantum interference and manipulation of entanglement in silicon wire waveguide quantum circuits

Integrated quantum photonic waveguide circuits are a promising approach to realizing future photonic quantum technologies. Here, we present an integrated photonic quantum technology platform utilizing the silicon-on- insulator material system, where quantum interference and the manipulation of quantum states of light are demonstrated in components orders of magnitude smaller than previous implementations. Two-photon quantum interference is presented in a multi-mode interference coupler, and the manipulation of entanglement is demonstrated in a Mach-Zehnder interferometer, opening the way to an all-silicon photonic quantum technology platform.

Generation of correlated photon pairs in a chalcogenide As2S3 waveguide

We demonstrate a 1550 nm correlated photon-pair source in an integrated glass platform—a chalcogenide As2S3 waveguide. A measured pair coincidence rate of 80 s−1 was achieved using 57 mW of continuous-wave pump. The coincidence to accidental ratio was shown to be limited by spontaneous Raman scattering effects that are expected to be mitigated by using a pulsed pump source.

Gallium arsenide (GaAs) quantum photonic waveguide circuits

Integrated quantum photonics is a promising approach for future practical and large-scale quantum information processing technologies, with the prospect of on-chip generation, manipulation and measurement of complex quantum states of light. The gallium arsenide (GaAs) material system is a promising technology platform, and has already successfully demonstrated key components including waveguide integrated single-photon sources and integrated single-photon detectors. However, quantum circuits capable of manipulating quantum states of light have so far not been investigated in this material system. Here, we report GaAs photonic circuits for the manipulation of single-photon and two-photon states. Two-photon quantum interference with a visibility of 94.9±1.3% was observed in GaAs directional couplers. Classical and quantum interference fringes with visibilities of 98.6±1.3% and 84.4±1.5% respectively were demonstrated in Mach–Zehnder interferometers exploiting the electro-optic Pockels effect. This work paves the way for a fully integrated quantum technology platform based on the GaAs material system.

Operating quantum waveguide circuits with superconducting single-photon detectors

Advanced quantum information science and technology (QIST) applications place exacting demands on optical components. Quantum waveguide circuits offer a route to scalable QIST on a chip. Superconducting single-photon detectors (SSPDs) provide infrared single-photon sensitivity combined with low dark counts and picosecond timing resolution. In this study, we bring these two technologies together. Using SSPDs we observe a two-photon interference visibility of 92.3±1.0% in a silica-on-silicon waveguide directional coupler at λ=804 nm—higher than that measured with silicon detectors (89.9±0.3%). We further operated controlled-NOT gate and quantum metrology circuits with SSPDs. These demonstrations present a clear path to telecom-wavelength quantum waveguide circuits.

Position controlled nanowires for infrared single photon emission

We report the experimental demonstration of single-photon and cascaded photon pair emission in the infrared, originating from a single InAsP quantum dot embedded in a standing InP nanowire. A regular array of nanowires is fabricated by epitaxial growth on an electron-beam patterned substrate. Photoluminescence spectra taken on single quantum dots show narrow emission lines. Superconducting single photon detectors, which have a higher sensitivity than avalanche photodiodes in the infrared, enable us to measure auto and cross correlations. Clear antibunching is observed [g(2)(0) = 0.12] and we show a biexciton–exciton cascade, which can be used to create entangled photon pairs.