Chang-Bae Lee

Intermetallic compound layer formation between Sn–3.5 mass %Ag BGA solder ball and (Cu, immersion Au/electroless Ni–P/Cu) substrate

The growth kinetics of intermetallic compound layers formed between eutectic Sn–3.5Ag BGA (ball grid array) solder and (Cu, immersion Au/electroless Ni–P/Cu) substrate by solid-state isothermal aging were examined at temperatures between 343 and 443 K for 0–100 days. In the solder joints between the Sn–Ag eutectic solder ball and Cu pads, the intermetallic compound layer was composed of two phases: Cu6Sn5 (η-phase) adjacent to the solder and Cu3Sn (ε-phase) adjacent to the copper. The layer of intermetallic on the immersion Au/electroless Ni–P/Cu substrate was composed of Ni3Sn4. As a whole, because the values of the time exponent (n) are approximately 0.5, the layer growth of the intermetallic compound was mainly controlled by a diffusion-controlled mechanism over the temperature range studied. The growth rate of Ni3Sn4 intermetallic compound was slower than that of the total Cu–Sn(Cu6Sn5+Cn3Sn). The apparent activation energy for growth of total Cu–Sn(Cu6Sn5+Cu3Sn) and Ni3Sn4 intermetallic compound were 64.82 and 72.54 kJ mol−1, respectively.

Investigation of Interfacial Reactions between Sn–Ag–Bi–In Solder and (Cu, Electroless Ni–P/Cu) Substrate

Abstract The growth kinetics of intermetallic compound layers formed between Sn–3Ag–8Bi–5In solder and (Cu, electroless Ni–P/Cu) substrate were investigated at temperatures between 70 and 170°C for 1 to 60 days. The layer growth of the intermetallic compounds in the Sn–Ag–Bi–In/Cu and Sn–Ag–Bi–In/electroless Ni–P systems satisfied the parabolic time law. As a whole, because the values of time exponent have approximately 0.5, the layer growth is mainly controlled by diffusion. The apparent activation energies for the growth of the Cu6Sn5 and Ni3Sn4 intermetallic compounds are 81.4 and 67.1 kJ/mol, respectively.