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Featured researches published by Chang Dong Kim.


Electrochemical and Solid State Letters | 2009

Reliable Bottom Gate Amorphous Indium-Gallium-Zinc Oxide Thin-Film Transistors with TiOx Passivation Layer

Hyun Sik Seo; Jong Uk Bae; Dae Hwan Kim; Yu Jin Park; Chang Dong Kim; In Byeong Kang; In Jae Chung; Ji Hyuk Choi; Jae Min Myoung

Titanium oxide (TiO x ) passivation layer was employed and optimized to stabilize the performance of the bottom gate amorphous indium-gallium-zinc oxide (a-IGZO) thin-film transistors (TFTs). A molybdenum/titanium (Mo/Ti) source-drain electrode was deposited on an a-IGZO layer, and the TiO, passivation layer was formed by oxidizing the Ti layer using oxygen plasma after etching the Mo layer. By increasing the oxygen plasma treatment time, the subthreshold slope and leakage current of the a-IGZO TFTs were improved to 0.78 V decade -1 and 0.3 pA, respectively, and the degradation of the TFT performance was not observed, even after thermal treatment at 280°C for 1 h.


SID Symposium Digest of Technical Papers | 2011

9.3: Control of Threshold Voltage in Back Channel Etch Type Amorphous Indium Gallium Zinc Oxide Thin Film Transistors

Seung Min Lee; Chang Il Ryoo; Jae Wook Park; Joon-Soo Han; Dae-won Kim; Yong-Yub Kim; Im-Kuk Kang; Kyung-Han Seo; Young Ju Koh; Dong-Min Han; Yong-Ho Choi; Hyun-Sik Seo; Bong Chul Kim; Soo Youle Cha; Jong-Uk Bae; Chang Dong Kim; Myungchul Jun; Yong Kee Hwang

Tuning the process pressure at the deposition of the passivation layers has been suggested in the way of controlling the threshold voltage of a-IGZO TFTs, making it possible to employ gate driver integration. It has showed that Vth linearly changes with the pressure ΔVth/ΔPressure∼3.5V/100Pa. A 3.2 inch WVGA AMLCD with integrated gate driver circuits were successfully demonstrated using the enhancement mode BCE type bottom gate a-IGZO TFTs.


2009 Flexible Electronics & Displays Conference and Exhibition | 2009

Full color flexible displays on thin metal foil with reduced bending radius

Chang Dong Kim; Juhn Suk Yoo; Jong Kwon Lee; Soo Young Yoon; Yong In Park; In Byeong Kang; In Jae Chung

We have developed Full color flexible AM-OLED and AM-EPD displays using a thin metal foil, allowing them to recover their original shape after being bent as well as to produce vivid color images. The key development technologies including a-Si TFT fabrication on thin stainless steel foil and integrated driver electronics in the display panel are described along with improved display performance in a curvature of 5cm bending radius.


SID Symposium Digest of Technical Papers | 2010

70.2: Distinguished Paper: Flexible Display Technology for a Mass Production using the Improved Etching Technology

Seung Han Paek; Yong In Park; Choon Ho Park; Yu Sok Lim; Sang Shin; Chang Dong Kim; Yong Kee Hwang

Flexible displays have attracted much attention as a future display due to highly rugged, lightweight, and extremely low power consumption. We have developed the flexible process technology for a mass production using the improved etching technology. F-DIET (Flexible Display using Improved Etching Technology) technology enables us to make a flexible display in standard AMLCD factories and to stably manufacture of flexible AMEPD and AMOLED.


Archive | 2007

Manufacturing method of the flexible display device

Chang Dong Kim; Hyun Sik Seo; Yong In Park; Seung Han Paek; Jung Jae Lee; Sang‐Soo Kim


Archive | 2011

METHOD FOR MANUFACTURING FLEXIBLE FLAT DEVICE

Jong Hyun Park; Chang Dong Kim; Gee Sung Chae; Juhn Suk Yoo; Soo Young Yoon; Soon Wook Cha; Won Bong Jang; Jae Kyung Choi


Archive | 2010

Method and apparatus of forming alignment layer for liquid crystal display device

Chang Dong Kim; Hyun Sik Seo; Kwang Hoon Shin


Archive | 2009

Apparatus for fabricating liquid crystal display panels

Chang Dong Kim; Hyun Sik Seo; Kwang Hoon Shin; Dae Hyun Nam


Archive | 2006

Method of forming alignment layer for liquid crystal display device

Chang Dong Kim; Hyun Sik Seo; Su Hyun Park; Kwang Hoon Shin


Journal of Crystal Growth | 2008

Alternating magnetic field-assisted crystallization of Si films without metal catalyst

Hyun Sik Seo; Chang Dong Kim; In Byeong Kang; In Jae Chung; Min Chang Jeong; Jae Min Myoung; Dong Hoon Shin

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