Chang G. Kim

Monodispersed ZnO nanoparticles from a single molecular precursorElectronic supplementary information (ESI) available: characterization data of the molecular precursor and thermolyzed ZnO nanoparticles and gaseous by-products. See http://www.rsc.org/suppdata/cc/b3/b306163a/

Monodispersed ZnO nanoparticles are easily prepared by the thermolysis of EtZnO(i)Pr as a single molecular precursor and TOPO without any extra solvent as well as any oxygen source.

ZnO nanowhiskers on ZnO nanoparticle-deposited Si(111) by MOCVD

Vertically aligned ZnO nanowhiskers have been grown on Si substrates spin-coated with ZnO nanoparticles by metal organic chemical vapor deposition (MOCVD) using Me2Zn·tmeda and a mixture of O2 and Ar gases. The ZnO nanowhiskers grown are single crystals with a growth rate of 3 μm h−1.

Heterobimetallic lithium organoaluminum and organogallium complexes: potential single precursors for MOCVD of LiMO 2 thin films

Abstract The reaction of Me2MCl with two equivalents of Li(OCH2CH2OMe) resulted in the formation of dimeric bimetallic complexes, [Li(OCH2CH2OMe)2MMe2]2 {M=Al (1), Ga (2)}. The crystal structures of 1 and 2 are dimeric and contain eight-membered rings that are similar to a beach chair consisting of a plane of four oxygen and two lithium atoms with each aluminum or gallium metal atom above and below this plane. Thermal analysis of 2 indicates that the dimeric complexes are volatile enough to be suitable as potential single precursors for metal organic chemical vapor deposition (MOCVD) of LiMO2 films.

Chemical-beam deposition of GaN films on Si(111) from diethylazidogallium methylhydrazine adduct

GaN films were grown on Si(111) substrates at 400–800 °C using a single precursor diethylazidogallium methylhydrazine adduct, Et2(N3)Ga⋅MeHNNH2, under high-vacuum conditions (5×10−6 Torr). The chemical composition, crystalline structure, and morphology of the deposited films were investigated by x-ray photoelectron spectroscopy, x-ray diffraction, double crystal x-ray diffraction, x-ray pole figure analysis, and scanning electron microscopy. The results show that high-quality h-GaN films with correct stoichiometry can be deposited on Si(111) at a relatively low temperature by chemical-beam deposition (CBD). Room-temperature photoluminescence measurements have been performed to evaluate the optical properties of the GaN films. The single precursor Et2(N3)Ga⋅MeHNNH2 has been found suitable for the CBD of GaN thin films on Si substrates.