Changhee Ko

Pure Co films of low resistivity and high conformality by low temperature thermal CVD/ALD using novel Co precursors

A new family of highly volatile alkylsilyl-functionality Co precursors, R<inf>3</inf>SiCo(CO)<inf>4</inf>, has been synthesized. One of them, Et<inf>3</inf>SiCo(CO)<inf>4</inf>, has been evaluated by low temperature thermal chemical vapor deposition (CVD) and atomic layer deposition (ALD), which gave low resistive (29 μΩ·cm) pure Co films with a good step overage. Dynamic stability test of Et<inf>3</inf>SiCo(CO)<inf>4</inf> also exhibited a better stability at 40°C and 50°C, compared to CCTBA, a conventional Co precursor.

Synthesis and PEALD evaluation of new Nickel precursors

A new family of oxygen and fluorine free Nickel (Ni) precursors, which are based on allyl and alkylpyrrolylimine ligands [Ni(allyl)(PCAI-R)], has been developed and evaluated for a Ni metal film with thermal and plasma enhanced ALD using H₂/NH₃ as a reducing agent. From Ni(allyl)(PCAI-iPr), pure Ni film with very low resistivity (5.3 μO·cm) was obtained at 400°C by PEALD, which is close to the resistivity value of bulk Nickel (5-10 μO·cm) [1].