Changsheng Song

The visible light hydrogen production of the Z-Scheme Ag 3 PO 4 /Ag/g-C 3 N 4 nanosheets composites

The Z-Scheme Ag3PO4/Ag/g-C3N4 nanosheets composites are synthesised via simple annealing and anion-exchange precipitation method. The obtained samples are characterized by SEM, XRD, TEM, XPS, UV–Vis and PL, which imply that the Z-Scheme Ag3PO4/Ag/g-C3N4 structure has been prepared successfully. The photocatalytic activity of the as-prepared Ag3PO4/Ag/g-C3N4 nanosheets composites displays a remarkable enhancement after the Ag3PO4/Ag nanoparticles being introduced by the hydrogen production under visible light. Further, the Z-Scheme structure of the sample and the lamellar structure of the C3N4 are considered as the main reasons for the enhancement.

p–n junction induced electron injection type transparent photosensitive film of Cu2O/carbon quantum dots/ZnO

An electron injection type transparent photosensitive Cu2O/carbon quantum dot (C QD)/ZnO p-n junction film was prepared by a simple route in which, successively, the ZnO film was prepared by a sputtering process, the C QDs and Cu2O were prepared by hydrothermal synthetic and chemical methods, then the C QDs and Cu2O were introduced onto the surface of the ZnO film. The results indicated that the C QDs and Cu2O were well combined with the ZnO film. The transparency and photosensitivity of this film were investigated, and exhibited an obvious photosensitive enhancement compared with those of the unmodified film. Through analysis, this enhancement of the photoconductivity could be attributed to the remarkable Cu2O/ZnO p-n junction and C QDs with unique up-converted photoluminescence.

Photoelectric conversion enhancement of Ag modified p-type Cu2O/n-type ZnO transparent heterojunction device

The Ag modified transparent Cu2O/ZnO p–n junction films were prepared by a simple magnetron sputtering process. The transparence and photoelectric conversion of these devices were investigated, which exhibited an obvious photoelectric conversion enhancement (PCE of 0.48%, ten times) than those of the unmodified heterojunction. Through analysis, the enhancement of the photoelectric conversion could be attributed to the remarkable Cu2O/ZnO p–n junction and Ag0 nanoparticles with the performances of photoelectron donor and surface enhanced plasmonic absorption.