Chao-Sung Lai

Growth of Large-Area and Highly Crystalline MoS2 Thin Layers on Insulating Substrates

The two-dimensional layer of molybdenum disulfide (MoS(2)) has recently attracted much interest due to its direct-gap property and potential applications in optoelectronics and energy harvesting. However, the synthetic approach to obtain high-quality and large-area MoS(2) atomic thin layers is still rare. Here we report that the high-temperature annealing of a thermally decomposed ammonium thiomolybdate layer in the presence of sulfur can produce large-area MoS(2) thin layers with superior electrical performance on insulating substrates. Spectroscopic and microscopic results reveal that the synthesized MoS(2) sheets are highly crystalline. The electron mobility of the bottom-gate transistor devices made of the synthesized MoS(2) layer is comparable with those of the micromechanically exfoliated thin sheets from MoS(2) crystals. This synthetic approach is simple, scalable, and applicable to other transition metal dichalcogenides. Meanwhile, the obtained MoS(2) films are transferable to arbitrary substrates, providing great opportunities to make layered composites by stacking various atomically thin layers.

pH Sensitivity Improvement on 8 nm Thick Hafnium Oxide by Post Deposition Annealing

A thin hafnium oxide (HfO 2 ) layer (8 nm), for hydrogen ion sensors, was deposited directly on a silicon substrate without the buffer oxides. Post deposition annealing (PDA) was performed to improve the sensitivity. The as-deposited HfO 2 sensing dielectric functions from pH 4 to pH 12, and the sensitivity is 46.2 mV/pH. For the samples with 900°C PDA, the sensitivity is increased to 58.3 mV/pH from pH 2 to pH 12. From atomic force microscope analysis, the improvement is related to the surface morphology. A physical model was proposed to explain PDA effects by the surface site density (surface area) and dissociation constants.

Fluorinated Graphene as High Performance Dielectric Materials and the Applications for Graphene Nanoelectronics

There is broad interest in surface functionalization of 2D materials and its related applications. In this work, we present a novel graphene layer transistor fabricated by introducing fluorinated graphene (fluorographene), one of the thinnest 2D insulator, as the gate dielectric material. For the first time, the dielectric properties of fluorographene, including its dielectric constant, frequency dispersion, breakdown electric field and thermal stability, were comprehensively investigated. We found that fluorographene with extremely thin thickness (5 nm) can sustain high resistance at temperature up to 400°C. The measured breakdown electric field is higher than 10 MV cm−1, which is the heightest value for dielectric materials in this thickness. Moreover, a proof-of-concept methodology, one-step fluorination of 10-layered graphene, is readily to obtain the fluorographene/graphene heterostructures, where the top-gated transistor based on this structure exhibits an average carrier mobility above 760 cm2/Vs, higher than that obtained when SiO2 and GO were used as gate dielectric materials. The demonstrated fluorographene shows excellent dielectric properties with fast and scalable processing, providing a universal applications for the integration of versatile nano-electronic devices.

Discrimination of Breast Cancer by Measuring Prostate-Specific Antigen Levels in Women's Serum

Prostate-specific antigen (PSA) has been reported to be a potential biomarker of breast cancer. Serum PSA of normal women is around 1 pg/mL, which is usually undetectable by current assay methods; thus an ultrasensitive measurement of PSA expression in womens serum is necessary to distinguish normal from malignant breast diseases. To enhance the sensitivity of conventional immunoassay technology for the detection of PSA in sera, we adopted a localized surface plasmon coupled fluorescence fiber-optic biosensor, which combines a sandwich immunoassay with the localized surface plasmon technique. The concentration of total PSA (t-PSA) (from 0.1 to 1000 pg/mL) in phosphate-buffered saline solution and the normalized fluorescence signal exhibit a linear relationship where the correlation coefficient is 0.9574. In addition, the concentration of additional t-PSA in 10-fold-diluted healthly womens serum across a similar range was measured. The correlation coefficient for this measurement is 0.9142. In clinical serum samples, moreover, the experimental results of t-PSA detection show that both the mean value and median of normalized fluorescence signals in the breast cancer group (155.2 and 145.7, respectively) are higher than those in the noncancer group (46.6 and 37.1, respectively). We also examined the receiver operating characteristic curve for t-PSA, and the area under the curve (AUC) is estimated to be 0.9063, the AUC being used to measure the performance of a test to correctly identify diseased and nondiseased subjects.

One-Step Formation of a Single Atomic-Layer Transistor by the Selective Fluorination of a Graphene Film

In this study, the scalable and one-step fabrication of single atomic-layer transistors is demonstrated by the selective fluorination of graphene using a low-damage CF4 plasma treatment, where the generated F-radicals preferentially fluorinated the graphene at low temperature (<200 °C) while defect formation was suppressed by screening out the effect of ion damage. The chemical structure of the C-F bonds is well correlated with their optical and electrical properties in fluorinated graphene, as determined by X-ray photoelectron spectroscopy, Raman spectroscopy, and optical and electrical characterizations. The electrical conductivity of the resultant fluorinated graphene (F-graphene) was demonstrated to be in the range between 1.6 kΩ/sq and 1 MΩ/sq by adjusting the stoichiometric ratio of C/F in the range between 27.4 and 5.6, respectively. Moreover, a unique heterojunction structure of semi-metal/semiconductor/insulator can be directly formed in a single layer of graphene using a one-step fluorination process by introducing a Au thin-film as a buffer layer. With this heterojunction structure, it would be possible to fabricate transistors in a single graphene film via a one-step fluorination process, in which pristine graphene, partial F-graphene, and highly F-graphene serve as the source/drain contacts, the channel, and the channel isolation in a transistor, respectively. The demonstrated graphene transistor exhibits an on-off ratio above 10, which is 3-fold higher than that of devices made from pristine graphene. This efficient transistor fabrication method produces electrical heterojunctions of graphene over a large area and with selective patterning, providing the potential for the integration of electronics down to the single atomic-layer scale.

Highly Reliable Multilevel and 2-bit/cell Operation of Wrapped Select Gate (WSG) SONOS Memory

In this letter, high-performance and reliable wrapped select gate (WSG) polysilicon-oxide-nitride-oxide-silicon (SONOS) memory cells with multilevel and 2-bit/cell operation have been successfully demonstrated. The multilevel storage is easily obtained with fast program/erase speed (10 mus/5 ms) and low programming current (3.5 muA) for our WSG SONOS by a source-side injection. Besides the excellent reliability properties of our multilevel WSG-SONOS memory including unconsidered gate and drain disturbance, long charge retention (>150degC) and good endurance (>104) are also presented. This novel WSG-SONOS memory with a multilevel and 2-bit/cell operation can be used in future high-density and high-performance memory application

Suppression of interfacial reaction for HfO2 on silicon by pre-CF4 plasma treatment

In this letter, the effects of pre-CF4 plasma treatment on Si for sputtered HfO2 gate dielectrics are investigated. The significant fluorine was incorporated at the HfO2∕Si substrate interface for a sample with the CF4 plasma pretreatment. The Hf silicide was suppressed and Hf–F bonding was observed for the CF4 plasma pretreated sample. Compared with the as-deposited sample, the effective oxide thickness was much reduced for the pre-CF4 plasma treated sample due to the elimination of the interfacial layer between HfO2 and Si substrate. These improved characteristics of the HfO2 gate dielectrics can be explained in terms of the fluorine atoms blocking oxygen diffusion through the HfO2 film into the Si substrate.

Integrating solid-state sensor and microfluidic devices for glucose, urea and creatinine detection based on enzyme-carrying alginate microbeads

A solid-state sensor embedded microfluidic chip is demonstrated for the detection of glucose, urea and creatinine in human serum. In the presented device, magnetic powder-containing enzyme-carrying alginate microbeads are immobilized on the surface of an electrolyte-insulator-semiconductor (EIS) sensor by means of a step-like obstacle in the microchannel and an external magnetic force. The sample is injected into the microchannel and reacts with the enzyme contained within the alginate beads; prompting the release of hydrogen ions. The sample concentration is then evaluated by measuring the resulting change in the voltage signal of the EIS sensor. The reaction time and alginate bead size are optimized experimentally using a standard glucose solution. The experimental results show that the device has a detection range of 2-8mM, 1-16mM and 10(-2)-10mM for glucose, urea and creatinine, respectively. Furthermore, it is shown that the device is capable of sequentially measuring all three indicators in a human serum sample. Finally, it is shown that the measured values of the glucose, urea and creatinine concentrations obtained using the device deviate from those obtained using a commercial kit by just 5.17%, 6.22% and 13.53%, respectively. This method can be extended to sequentially measure multiple blood indicators in the sample chip by replacing different types of enzyme in alginate bead and can address the enzyme preservation issue in the microfluidic device. Overall, the results presented in this study indicate that the microfluidic chip has significant potential for blood monitoring in point-of-care applications.

Prevalence of childhood acne, ephelides, warts, atopic dermatitis, psoriasis, alopecia areata and keloid in Kaohsiung County, Taiwan: a community-based clinical survey

Background  Epidemiological study on childhood dermatoses performed by direct inspection of dermatologists is limited.

Characterization of CF4-plasma fluorinated HfO2 gate dielectrics with TaN metal gate

In this paper, fluorine incorporation into the HfO2 gate dielectrics by post CF4 plasma treatment was proposed to improve the electrical characterization. TaN–HfO2–p-Si capacitors were demonstrated in this work. The characteristics of fluorinated HfO2 gate dielectrics were improved, including the capacitance-voltage hysteresis and current-voltage behaviors. This may be attributed to the fluorine incorporated into the HfO2 gate dielectrics as revealed by secondary ion mass spectroscopy. Moreover, the formation of Hf-F bonding was observed through electron spectroscopy for chemical analysis spectra.