Chaofan Xue

High-performance soft x-ray spectromicroscopy beamline at SSRF.

The Shanghai Synchrotron Radiation Facility (SSRF) is the first third-generation synchrotron facility in China and operated at an electron energy of 3.5 GeV. One of the seven beamlines in the first construction phase is devoted to soft x-ray spectromicroscopy and is equipped with an elliptically polarized undulator light source, a plane grating monochromator, and a scanning transmission x-ray microscope end station. Initial results reveal the high performance of this beamline, with an energy resolving power estimated to be over 10,000 at the argon L-edge and a spatial resolution better than 30 nm.

Enhanced light extraction of scintillator using large-area photonic crystal structures fabricated by soft-X-ray interference lithography

Soft-X-ray interference lithography is utilized in combination with atomic layer deposition to prepare photonic crystal structures on the surface of Bi4Ge3O12 (BGO) scintillator in order to extract the light otherwise trapped in the internal of scintillator due to total internal reflection. An enhancement with wavelength- and emergence angle-integration by 95.1% has been achieved. This method is advantageous to fabricate photonic crystal structures with large-area and high-index-contrast which enable a high-efficient coupling of evanescent field and the photonic crystal structures. Generally, the method demonstrated in this work is also suitable for many other light emitting devices where a large-area is required in the practical applications.

Guided-mode resonance assisted directional emission of a wavelength-shifting film for application in scintillation detection

Thin-film luminescent layers as wavelength shifters using in the scintillation detection system suffer with low efficiency due to the total internal reflection and the non-directional emission. In the present work, we design and fabricate a photonic crystal on the surface of LuTaO(4):Eu(3+) thin-film which is a newly developed luminescent material using in radiation detection systems. The entire structure shows guided-mode resonances with only one TE and TM mode. As a result, the emitting light is effectively extracted. Furthermore, due to only two modes existing in the layer, the directionality of emission is strongly controlled. This result enables the structured LuTaO(4):Eu(3+) thin-film to be a potential wavelength shifter with high-efficiency.

Development of broadband X-ray interference lithography large area exposure system

The single-exposure patterned area is about several 10(2) × 10(2) μm(2) which is mainly decided by the mask area in multi-beam X-ray interference lithography (XIL). The exposure area is difficult to stitch to a larger one because the patterned area is surrounded by 0th diffraction exposure areas. To block the 0th diffraction beams precisely and effectively, a new large area exposure technology is developed in the Shanghai Synchrotron Radiation Facility by applying an order-sorting aperture with a new in situ monitoring scheme in the XIL system. The patterned area could be stitched readily up to several square centimeters and even bigger by this technology.

Numerical analysis of partially coherent radiation at soft x-ray beamline

A new model for numerical analysis of partially coherent x-ray at synchrotron beamlines is presented. The model is based on statistical optics. Four-dimensional coherence function, Mutual Optical Intensity (MOI), is applied to describe the wavefront of the partially coherent light. The propagation of MOI through optical elements in the beamline is deduced with numerical calculation. The coherence of x-ray through beamlines can be acquired. We applied the model to analyze the coherence in the STXM beamline at SSRF, and got the coherence length of the beam at the endstation. To verify the theoretical results, the diffraction experiment of a single slit was performed and the diffraction pattern was simulated to get the coherence length, (31 ± 3.0) µm × (25 ± 2.1) µm (H × V), which had a good agreement with the theoretical results, (30.7 ± 0.6) µm × (31 ± 5.3) µm (H × V). The model is applicable to analyze the coherence in synchrotron beamlines.

Silicon membrane resonant-cavity-enhanced photodetector

A Si resonant-cavity-enhanced (RCE) photodiode was fabricated on a silicon membrane. The Si membrane was formed by etching from the back side of the silicon-on-insulator substrate with the buried SiO2 layer as etch-stop layer. A gold layer was deposited serving as an electrode layer and bottom mirror of the RCE photodiode. The photodiode had an external quantum efficiency of 33.8% at the resonant wavelength of 848 nm and a full width at half maximum (FWHM) of 17 nm. The responsivity was 4.6 times that of a conventional Si p-i-n photodiode with the same absorption layer thickness. (c) 2005 American Institute of Physics.

A new extra-focus monochromator designed for high-performance VUV beamlines

A new monochromator called an extra-focus constant-included-angle varied-line-spacing (VLS) cylindrical-grating monochromator (extra-focus CIA-VCGM) is described. This monochromator is based on the Hettrick-Underwood scheme where the plane VLS grating is replaced by a cylindrical one in order to zero the defocus at three reference photon energies in the vacuum-ultraviolet range. It has a simple mechanical structure and a fixed focus spot with high performance over a wide energy range. Furthermore, its mechanical compatibility with a standard VLS plane-grating monochromator allows convenient extension into the soft-X-ray range.

Enhancement of directional broadband luminescence from a scintillation film via guided-mode resonance in a photonic crystal structure

Scintillation films play an important role in radiation detection. Improved light output and control of emission directionality are critical for practical applications. To obtain enhancement of broadband directional luminescence from a Lu2SiO5:Ce3+ scintillation film, a special photonic crystal structure is deposited on the film surface to provide multiple guided-mode resonances. The structure can be designed according to the application requirements. Numerical simulations are performed to analyze the enhancement. Overall, this method could be used when directional emission is required for radiation detection.

Influence of symmetry and duty cycles on the pattern generation in achromatic Talbot lithography

Achromatic Talbot lithography has been proved as a robust and high throughput technique for large area nanopatterning with controllable feature sizes and duty cycles. In this work, the influence of symmetry and duty cycles on the pattern generation has been investigated in detail. Compared with square lattice case, no lattice rotation and spatial frequency multiplication can be observed in hexagonal nanopattern generation. Uniform pattern distribution with a 20 nm feature size has been obtained in square and hexagonal lattices by the masks with 144 nm period and ∼50% duty cycle. For the exposure of mask with a smaller duty cycle, nonuniform dot size distribution has been obtained in the square lattice. While, by using a smaller duty cycle hexagonal lattice mask, a highly uniform periodic hexagonal nanopattern with a 10% duty cycle has been obtained. All the experimental results were consistent with the simulation work.

Directional emission of plastic luminescent films using photonic crystals fabricated by soft-X-ray interference lithography and reactive ion etching

In this report, a novel method to prepare photonic crystals based on the combination of soft-X-ray interference lithography (XIL) and reactive ion etching (RIE) with a bi-layer photoresist system was developed. XIL can be utilized to prepare periodic structures with high efficiency but the depth of etch is limited due to the strong absorption of photoresist for soft-X-ray. Based on the pattern prepared by XIL, RIE can be utilized to further etch a second layer of photoresist, so that one can obtain a large depth of etch. Controlling the dispersion relation of the prepared photonic crystals, strongly directional emission of plastic luminescent films was demonstrated. A wavelength-integrated enhancement of 2.64-folds enhancement in the range of 420 to 440 nm in the normal direction was obtained. Guided-mode resonance and Fabry-Perot resonance could be the critical factors to control the directional emission. Devices based on directional emission films have a variety of applications in such as detectors, optical communication and display screens.