Chaofan Zheng

High-Efficient Solar Cells by the Ag/Cu-Assisted Chemical Etching Process on Diamond-Wire-Sawn Multicrystalline Silicon

In this paper, we presented a novel low-cost method for diamond-wire-sawn (DWS) multicrystalline silicon (mc-Si) wafer texturation based on the metal-assisted chemical etching process with Ag/Cu dual elements and nanostructure rebuilding (NSR) treatment to remove the saw marks and to realize uniform invert pyramid textured structures. Benefiting from both the increased optical absorption and better passivation, an efficiency of 18.71% for invert pyramid mc-Si solar cells from a DWS wafer with a standard size of 156 × 156 mm2 was obtained, which was 0.58% and 2.33% absolutely higher than that (18.13%) of the traditional mc-Si solar cell and than that (16.38%) of the black mc-Si solar cell without NSR treatment, respectively.

Efficient light trapping of quasi-inverted nanopyramids in ultrathin c-Si through a cost-effective wet chemical method

In this paper, we report quasi-inverted nanopyramids (QIP) for light-trapping in ultrathin c-Si by a cost-effective wet chemical method. The QIP is fabricated by a well-known two-step Ag assisted chemical etching method followed by a post nanostructure rebuilding (NSR) process, lowering the surface area to ∼3.0 times for suppressing surface recombination losses. The comparable average absorptance value of 43 μm c-Si with double-sided QIP to that of 182 μm c-Si with double-sided conventional pyramid in the spectral range of 300–1100 nm demonstrates an over 4.2-fold reduction in material usage. Finally, a simulation model is proposed to explain the superiority of our QIP compared with the periodic inverted pyramid (IP) structure of the same size, presenting a promising method to the mass production of high-efficiency ultrathin c-Si HIT solar cells.