Chaoxing Wu
Hanyang University
Network
Latest external collaboration on country level. Dive into details by clicking on the dots.
Publication
Featured researches published by Chaoxing Wu.
Applied Physics Letters | 2011
Chaoxing Wu; Fushan Li; Yongai Zhang; Tailiang Guo; Ting Chen
The functionalization of graphene oxide (GO) sheets with polyimide (PI) enables the layer-by-layer fabrication of a GO-PI hybrid resistive-switch device and leads to high reproducibility of the memory effect. The current-voltage curves for the as-fabricated device exhibit multilevel resistive-switch properties under various reset voltages. The capacitance-voltage characteristics for a capacitor based on GO-PI nanocomposite indicate that the electrical switching may originate from the charge trapping in GO sheets. The high device-to-device uniformity and unique memory properties of the device make it an attractive candidate for applications in next-generation high-density nonvolatile flash memories.
ACS Nano | 2016
Chaoxing Wu; Tae Whan Kim; Fushan Li; Tailiang Guo
The technological realization of wearable triboelectric generators is attractive because of their promising applications in wearable self-powered intelligent systems. However, the low electrical conductivity, the low electrical stability, and the low compatibility of current electronic textiles (e-textiles) and clothing restrict the comfortable and aesthetic integration of wearable generators into human clothing. Here, we present high-performance, transparent, smart e-textiles that employ commercial textiles coated with silver nanowire/graphene sheets fabricated by using a scalable, environmentally friendly, full-solution process. The smart e-textiles show superb and stable conduction of below 20 Ω/square as well as excellent flexibility, stretchability, foldability, and washability. In addition, wearable electricity-generating textiles, in which the e-textiles act as electrodes as well as wearable substrates, are presented. Because of the high compatibility of smart e-textiles and clothing, the electricity-generating textiles can be easily integrated into a glove to harvest the mechanical energy induced by the motion of the fingers. The effective output power generated by a single generator due to that motion reached as high as 7 nW/cm(2). The successful demonstration of the electricity-generating glove suggests a promising future for polyester/Ag nanowire/graphene core-shell nanocomposite-based smart e-textiles for real wearable electronic systems and self-powered clothing.
Advanced Materials | 2017
Chaoxing Wu; Tae Whan Kim; Tailiang Guo; Fushan Li; Dea Uk Lee; Jianhua Yang
The mimicking of classical conditioning, including acquisition, extinction, recovery, and generalization, can be efficiently achieved by using a single flexible memristor. In particular, the experiment of Pavlovs dog is successfully demonstrated. This demonstration paves the way for reproducing advanced neural processes and provides a frontier approach to the design of artificial-intelligence systems with dramatically reduced complexity.
Applied Physics Letters | 2014
Chaoxing Wu; Fushan Li; Tailiang Guo
Tristable resistive memories based on single layer graphene (SLG)/insulating polymer multi-stacking layer were fabricated. By using the traditional transfer method, the chemical vapor deposition-synthesized SLG serving as charging layers were combined with poly(methyl methacrylate) (PMMA) layers and polystyrene (PS) layers to form charge traps with various depth. Based on the PS/SLG/PMMA/SLG/PMMA multi-stacking layer, the devices exhibited efficient tristable memory performances. The ratios as large as 104 between different resistive states were maintained for a retention time of more than 104 s. The operation mechanisms of stepping-charging in the multi-stacking layer for the tristable resistive switching were proposed on the basis of the current-voltage analysis.
ACS Applied Materials & Interfaces | 2013
Xiongtu Zhou; Tihang Lin; Yuhui Liu; Chaoxing Wu; Xiangyao Zeng; Dong Jiang; Yongai Zhang; Tailiang Guo
High-quality tetrapod-shaped Sn-doped ZnO (T-SZO) nanostructures have been successfully synthesized via the thermal evaporation of mixed Zn and Sn powder. The effects of the Sn dopant on the morphology, microstructure, optical, and field-emission (FE) properties of T-SZO were investigated. It was found that the growth direction of the legs of T-SZO is parallel to the [0001] crystal c-axis direction and that the incorporation of Sn in the ZnO matrix increases the aspect ratio of the tetrapods, leads to blue shift in the UV region, and considerably improves the FE performance. The results also show that tetrapod cathodes with around a 0.84 atom % Sn dosage have the best FE properties, with a turn-on field of 1.95 V/μm, a current density of 950 μA/cm2 at a field of 4.5 V/μm, and a field-enhancement factor as high as 9556.
Nature Communications | 2017
Chaoxing Wu; Tae Whan Kim; Hwan Young Choi; Dmitri B. Strukov; Jianhua Yang
If a three-dimensional physical electronic system emulating synapse networks could be built, that would be a significant step toward neuromorphic computing. However, the fabrication complexity of complementary metal-oxide-semiconductor architectures impedes the achievement of three-dimensional interconnectivity, high-device density, or flexibility. Here we report flexible three-dimensional artificial chemical synapse networks, in which two-terminal memristive devices, namely, electronic synapses (e-synapses), are connected by vertically stacking crossbar electrodes. The e-synapses resemble the key features of biological synapses: unilateral connection, long-term potentiation/depression, a spike-timing-dependent plasticity learning rule, paired-pulse facilitation, and ultralow-power consumption. The three-dimensional artificial synapse networks enable a direct emulation of correlated learning and trainable memory capability with strong tolerances to input faults and variations, which shows the feasibility of using them in futuristic electronic devices and can provide a physical platform for the realization of smart memories and machine learning and for operation of the complex algorithms involving hierarchical neural networks.High-density information storage calls for the development of modern electronics with multiple stacking architectures that increase the complexity of three-dimensional interconnectivity. Here, Wu et al. build a stacked yet flexible artificial synapse network using layer-by-layer solution processing.
Applied Physics Letters | 2014
Wei Chen; Fushan Li; Chaoxing Wu; Tailiang Guo
Graphene quantum dots (GQDs), which are edge-bound nanometer-size graphene pieces, have fascinating electronic and optical properties due to their quantum confinement and edge effect. In this paper, GQDs were synthesized by using acid treatment and chemical exfoliation of multi-walled carbon nanotubes (MWCNTs). The structure of the GQDs was investigated by transmission electron microscope. The GQDs have a uniform size distribution, zigzag edge structure and two-dimensional morphology. The results indicated that the GQDs have bright blue emission upon UV excitation. The highly fluorescent GQDs exhibited high water solubility and good stability. It is shown that the acid treatment of MWCNTs leads to the formation of the functional group in zigzag sites, which results in the pH-dependent fluorescence of the GQDs.
ACS Nano | 2017
Chaoxing Wu; Tae Whan Kim; Jae Hyeon Park; Haoqun An; Jiajia Shao; Xiangyu Chen; Zhong Lin Wang
As one of their major goals, researchers attempting to harvest mechanical energy efficiently have continuously sought ways to integrate mature technologies with cutting-edge designs to enhance the performances of triboelectric nanogenerators (TENGs). In this research, we introduced monolayer molybdenum-disulfide (MoS2) into the friction layer of a TENG as the triboelectric electron-acceptor layer in an attempt to dramatically enhance its output performance. As a proof of the concept, we fabricated a vertical contact-separation mode TENG containing monolayer MoS2 as an electron-acceptor layer and found that the TENG exhibited a peak power density as large as 25.7 W/m2, which is 120 times larger than that of the device without monolayer MoS2. The mechanisms behind the performance enhancement, which are related to the highly efficient capture of triboelectric electrons in monolayer MoS2, are discussed in detail. This study indicates that monolayer MoS2 can be used as a functional material for efficient energy harvesting.
Applied Physics Letters | 2012
Chaoxing Wu; Fushan Li; Yongai Zhang; Tailiang Guo
The electrical properties of a resistive-switching memory based on a single graphene sheet suspended on a patterned indium-tin-oxide electrode pair were investigated. Current-voltage measurements on the planar device showed a large ON/OFF ratio (∼106) and excellent retention ability in ambient conditions. Data storage of the device can be realized by applying voltage bias and rewritten after simple heat treatment. Switching mechanisms for the graphene-based memory device were found to be related to the local oxidation of graphene sheet at the graphene/electrode interface.
Applied Physics Letters | 2017
Chang Han Bok; Chaoxing Wu; Tae Whan Kim
Resistive switching memory devices were fabricated utilizing graphene quantum dot (GQD):poly(methyl silsesquioxane) (PMSSQ) hybrid nanocomposites. Current-voltage curves for the Al/GQD:PMSSQ/indium-tin-oxide devices at room temperature showed write-once-read-many-times memory (WORM) characteristics with an ON/OFF ratio of as large as 106 due to the homogeneous dispersion of the GQDs in the PMSSQ matrix. The WORM devices maintained retention times larger than 2 × 104 s under ambient conditions. The devices showed high device-to-device reproducibility with threshold-voltage distributions between 3 and 5 V. The ON state currents remained between 10−6 and 10−3 A, and the OFF state currents maintained between 10−12 and 10−9 A. The operating mechanisms concerning the interaction between the GQDs and the PMSSQ matrix for the resistive-switch phenomenon were analyzed on the basis of the I–V results and with the aid of the energy band diagram.