Charlotte E. Sanders

Synthesis of Epitaxial Single-Layer MoS2 on Au(111)

We present a method for synthesizing large area epitaxial single-layer MoS2 on the Au(111) surface in ultrahigh vacuum. Using scanning tunneling microscopy and low energy electron diffraction, the evolution of the growth is followed from nanoscale single-layer MoS2 islands to a continuous MoS2 layer. An exceptionally good control over the MoS2 coverage is maintained using an approach based on cycles of Mo evaporation and sulfurization to first nucleate the MoS2 nanoislands and then gradually increase their size. During this growth process the native herringbone reconstruction of Au(111) is lifted as shown by low energy electron diffraction measurements. Within the MoS2 islands, we identify domains rotated by 60° that lead to atomically sharp line defects at domain boundaries. As the MoS2 coverage approaches the limit of a complete single layer, the formation of bilayer MoS2 islands is initiated. Angle-resolved photoemission spectroscopy measurements of both single and bilayer MoS2 samples show a dramatic change in their band structure around the center of the Brillouin zone. Brief exposure to air after removing the MoS2 layer from vacuum is not found to affect its quality.

Single-layer MoS2 on Au(111): Band gap renormalization and substrate interaction

The electronic structure of epitaxial single-layer MoS

Growth and electronic structure of epitaxial single-layer WS 2 on Au(111)

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Spin and valley control of free carriers in single-layer WS2

on Au(111) is investigated by angle-resolved photoemission spectroscopy, scanning tunnelling spectroscopy, and first principles calculations. While the band dispersion of the supported single-layer is close to a free-standing layer in the vicinity of the valence band maximum at

Crystalline and electronic structure of single-layer TaS2

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Absence of superconductivity in ultrathin layers of FeSe synthesized on a topological insulator

and the calculated electronic band gap on Au(111) is similar to that calculated for the free-standing layer, significant modifications to the band structure are observed at other points of the two-dimensional Brillouin zone: At

Quasi-one-dimensional metallic band dispersion in the commensurate charge density wave of 1T-TaS2

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Spin-dependent electron-phonon coupling in the valence band of single-layer WS2

, the valence band maximum has a significantly higher binding energy than in the free MoS

Contact-Induced Semiconductor-to-Metal Transition in Single-Layer WS2

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Epitaxial growth of single-orientation high-quality MoS2 monolayers

layer and the expected spin-degeneracy of the uppermost valence band at the