Chee Tat Toh

Controlled Hydrogenation of Graphene Sheets and Nanoribbons

The electronic properties of graphene sheets and nanoribbons with different degrees of hydrogenation have been investigated using a combination of charge transport and Raman spectroscopy experiments. The field-effect transistor mobility of graphene is shown to be highly sensitive to the treatment time during atomic hydrogen dose and follows an exponential decrease with time. Raman spectroscopy demonstrates linearly increasing defect-band intensity, and when considered together with transport data, the relationship between graphene mobility and the crystalline size of intact sp(2) carbon regions can be derived. Further, the increase in width of the voltage plateau for monolayer and bilayer graphene points to the formation of midgap states. For partially hydrogenated graphene, the temperature-dependent transport in these states shows a weak insulating behavior. A comparison of Raman spectrum and conductivity data of partially hydrogenated monolayer and bilayer graphene suggests that the latter is also quite susceptible to adsorption of hydrogen atoms, despite a stiffer lattice structure.

Colossal Ultraviolet Photoresponsivity of Few-Layer Black Phosphorus

Black phosphorus has an orthorhombic layered structure with a layer-dependent direct band gap from monolayer to bulk, making this material an emerging material for photodetection. Inspired by this and the recent excitement over this material, we studied the optoelectronics characteristics of high-quality, few-layer black phosphorus-based photodetectors over a wide spectrum ranging from near-ultraviolet (UV) to near-infrared (NIR). It is demonstrated for the first time that black phosphorus can be configured as an excellent UV photodetector with a specific detectivity ∼3 × 10(13) Jones. More critically, we found that the UV photoresponsivity can be significantly enhanced to ∼9 × 10(4) A W(-1) by applying a source-drain bias (VSD) of 3 V, which is the highest ever measured in any 2D material and 10(7) times higher than the previously reported value for black phosphorus. We attribute such a colossal UV photoresponsivity to the resonant-interband transition between two specially nested valence and conduction bands. These nested bands provide an unusually high density of states for highly efficient UV absorption due to the singularity of their nature.

Ultrathin Organic Solar Cells with Graphene Doped by Ferroelectric Polarization

Graphene has been employed as transparent electrodes in organic solar cells (OSCs) because of its good physical and optical properties. However, the electrical conductivity of graphene films synthesized by chemical vapor deposition (CVD) is still inferior to that of conventional indium tin oxide (ITO) electrodes of comparable transparency, resulting in a lower performance of OSCs. Here, we report an effective method to improve the performance and long-term stability of graphene-based OSCs using electrostatically doped graphene films via a ferroelectric polymer. The sheet resistance of electrostatically doped few layer graphene films was reduced to ∼70 Ω/sq at 87% optical transmittance. Such graphene-based OSCs exhibit an efficiency of 2.07% with a superior stability when compared to chemically doped graphene-based OSCs. Furthermore, OSCs constructed on ultrathin ferroelectric film as a substrate of only a few micrometers show extremely good mechanical flexibility and durability and can be rolled up into a cylinder with 7 mm diameter.

Flexible graphene-PZT ferroelectric nonvolatile memory

We report the fabrication of a flexible graphene-based nonvolatile memory device using Pb(Zr0.35,Ti0.65)O3 (PZT) as the ferroelectric material. The graphene and PZT ferroelectric layers were deposited using chemical vapor deposition and sol–gel methods, respectively. Such PZT films show a high remnant polarization (Pr) of 30 μC cm−2 and a coercive voltage (Vc) of 3.5 V under a voltage loop over ±11 V. The graphene–PZT ferroelectric nonvolatile memory on a plastic substrate displayed an on/off current ratio of 6.7, a memory window of 6 V and reliable operation. In addition, the device showed one order of magnitude lower operation voltage range than organic-based ferroelectric nonvolatile memory after removing the anti-ferroelectric behavior incorporating an electrolyte solution. The devices showed robust operation in bent states of bending radii up to 9 mm and in cycling tests of 200 times. The devices exhibited remarkable mechanical properties and were readily integrated with plastic substrates for the production of flexible circuits.