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Dive into the research topics where Chenchang Zhan is active.

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Featured researches published by Chenchang Zhan.


asia pacific conference on circuits and systems | 2016

A low-complexity fast-locking digital PLL with multi-output bang-bang phase detector

Qiwei Huang; Chenchang Zhan; Jinwook Burm

This paper presents a locking-accelerated DPLL based on multi-output bang-bang phase detector (MOBBPD) with reused most significant bits (MSBs). The bang-bang structure has simple implementation by eliminating the sensitive time-to-digital converter (TDC), while MOBBPD allows for reduced loop locking-time due to the multi-output. To further accelerate the loop locking, a scheme of reusing the MSBs is proposed to signify the large phase-difference at the early stage of lock acquisition, hence reducing the phase difference quickly. The low complexity of the design is maintained due to the simple structure. The proposed DPLL is designed using a 0.18-μm CMOS process. It generates an output clock frequency range of 1–2.2 GHz with 7.8–17.2 MHz input reference frequency. The power consumption is 5.1 mW while the locking speed is improved by around 20 times improvement compared to without reusing the MSBs.


asia pacific conference on circuits and systems | 2016

An ultra-low power CMOS subthreshold voltage reference without requiring resistors or BJTs

Yang Liu; Chenchang Zhan; Lidan Wang

This paper presents a novel ultra-low power voltage reference operational from supply voltage down to less than 0.9V. In the proposed reference circuit, the PTAT voltage is generated by feeding the leakage current of a zero-Vgs NMOS transistor to two diode-connected NMOS transistors, both of which are in subthreshold region; while the CTAT voltage is created by using the body-diodes of another NMOS transistor. Consequently, low-voltage, low-power operation can be achieved without requiring resistors or BJTs, hence with small chip area consumption. The proposed circuit is designed in a 0.18-μm process. Simulation results show that it is capable of providing an 808mV reference voltage with 10ppm/°C from −30°C–125°C even with only 900mV supply voltage. Moreover, the typical power consumption is only 10nW.


Microelectronics Journal | 2017

Analysis and design of a current-mode bandgap reference with high power supply ripple rejection

Lidan Wang; Chenchang Zhan; Junyao Tang; Shuangxing Zhao; Guigang Cai; Yang Liu; Qiwei Huang; Guofeng Li

In this paper, a current-mode bandgap reference (BGR) circuit with cascode current mirrors and improved frequency compensation for achieving high power supply ripple rejection (PSRR) is presented. By slightly modifying a conventional frequency compensation scheme, the PSRR of the BGR is significantly enhanced. PSRRs of the BGR with the two different compensation techniques have been formulated and verified. Moreover, design considerations are presented, taking into account the critical parasitic capacitors effect in PSRR. To our knowledge, this is the first time in the literature of explicitly demonstrating how the PSRR of a BGR is improved due to the frequency compensation. The feedback loop stability is also analyzed. The measured PSRR of an example BGR using the modified compensation fabricated in a standard 0.18-m CMOS process is 77dB and 62dB at 1kHz, and 100kHz, respectively, with more than 40dB improvement at the high frequency ranges over the design with the classical compensation.


international conference on electron devices and solid-state circuits | 2016

Design of high-PSRR current-mode bandgap reference with improved frequency compensation

Lidan Wang; Chenchang Zhan; Shuangxing Zhao; Guigang Cai; Yang Liu; Qiwei Huang; Guofeng Li

In this paper, a current-mode bandgap reference (BGR) circuit with cascode current mirrors and improved frequency compensation for achieving high power supply ripple rejection (PSRR) is presented. By slightly modifying a conventional frequency compensation scheme, the PSRR of the BGR is significantly enhanced. PSRRs of the BGR with the two different compensation techniques have been formulated. To our knowledge, this is the first time in the literature of explicitly demonstrating how the PSRR is improved due to the frequency compensation. The feedback loop stability is also analyzed. The simulated PSRR of an example BGR using the modified compensation in a 0.18-μm CMOS process is -108 dB, -68 dB, and -61 dB at DC, 10 kHz, and 10 MHz, respectively, with more than 40dB improvement at certain high frequency ranges over the design with the classical compensation.


IEEE Sensors Journal | 2017

An Energy-Efficient Frequency-Domain CMOS Temperature Sensor With Switched Vernier Time-to-Digital Conversion

Qiwei Huang; Hyobin Joo; Jinwoo Kim; Chenchang Zhan; Jinwook Burm


International Journal of Circuit Theory and Applications | 2018

An amplifier‐offset‐insensitive and high PSRR subthreshold CMOS voltage reference

Lidan Wang; Chenchang Zhan; Junyao Tang; Guofeng Li


IEEE Transactions on Very Large Scale Integration Systems | 2018

An Ultralow Power Subthreshold CMOS Voltage Reference Without Requiring Resistors or BJTs

Yang Liu; Chenchang Zhan; Lidan Wang


international symposium on circuits and systems | 2018

A Low-Power High-PSRR CMOS Voltage Reference with Active-Feedback Frequency Compensation for IoT Applications

Lidan Wang; Chenchang Zhan; Linjun He; Junyao Tang; Guanhua Wang; Yang Liu; Guofeng Li


ieee computer society annual symposium on vlsi | 2018

Replica-Based Low Drop-Out Voltage Regulator with Assistant Power Transistors for Digital VLSI Systems

Yang Nan; Chenchang Zhan; Guanhua Wang; Linjun He; Han Li


IEEE Transactions on Very Large Scale Integration Systems | 2018

A 0.9-V 33.7-ppm/°C 85-nW Sub-Bandgap Voltage Reference Consisting of Subthreshold MOSFETs and Single BJT

Lidan Wang; Chenchang Zhan; Junyao Tang; Yang Liu; Guofeng Li

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Lidan Wang

University of Science and Technology

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Yang Liu

University of Science and Technology

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Junyao Tang

University of Science and Technology

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Linjun He

University of Science and Technology

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Guanhua Wang

University of Science and Technology

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Guigang Cai

University of Science and Technology

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