Cheng-Chung Jaing

Optical monitoring of silver-based transparent heat mirrors

Both three-layer (TiO(2)-Ag-TiO(2)) and five-layer (TiO(2)-Ag-TiO(2)-Ag-TiO(2)) heat mirrors with optimum transmission in the visible and good reflectance in the IR have been designed by admittance diagram techniques. The mirrors were fabricated successfully by optical monitoring. An interesting anomalous layer was found and explained, and its equivalent refractive index and thickness are 2.015 - i0.016 and 2.56 nm, respectively.

An apparatus for the measurement of internal stress and thermal expansion coefficient of metal oxide films

A measuring apparatus based on a phase shifting interferometry technique to determine the mechanical properties of metal oxide films was presented. Thin films were prepared by ion-beam sputter deposition at low substrate temperature. Quantitative determination of the mechanical properties such as the internal stress, biaxial elastic modulus, and thermal expansion coefficient of metal oxide films were investigated. A phase shifting Twyman–Green interferometer with the phase reduction algorithm was setup to measure the temperature-dependent stress in thin films. Two types of circular glass plates, with known Young’s moduli, Poisson’s ratios, and thermal expansion coefficients, were used as coating substrate. The temperature-dependent stress behavior of the metal oxide films was obtained by heating samples in the range from room temperature to 70 °C. The stresses of thin films deposited on two different substrates were plotted against the stress measurement temperature, showing a linear dependence. Four oxid...

Optical coatings on polymethyl methacrylate and polycarbonate

Abstract Highly adherent and abrasion-resistant optical coatings on PMMA and PC have been studied. A good precoated layer is necessary to have good adhesion and abrasion resistance. For precision optics, oxygen-deficient oxide is suggested as a precoated binding layer.

Simultaneous determination of the thermal expansion coefficient and the elastic modulus of Ta2O5 thin film using phase shifting interferometry

Abstract This paper reports on the application of a phase shifting interferometry technique for the concurrent measurement of the thermal expansion coefficient αf and the elastic modulus Ef /1 - Vf of Ta2O5 thin film. The Ta2O5 films were prepared by ion beam sputter deposition. The stresses in the thin films were measured with the phase shifting interferometry technique using two types of circular discs with known thermal expansion coefficients, Youngs moduli and Poissons ratios. The temperature-dependent stress behaviour of Ta2O5 films was obtained by heating samples in the range from room temperature to 70°C. The internal stresses of Ta2O5 thin films deposited on the BK-7 and Pyrex glass substrates were plotted against the stress measurement temperature, showing a linear dependence. From the slopes of the two lines in the stress versus temperature plot, the thermal expansion coefficient and the elastic modulus of Ta2O5 thin film are then calculated.

Effect of thermal annealing on the optical properties and residual stress of TiO2 films produced by ion-assisted deposition

The effects of thermal annealing of titanium oxide films deposited by ion-beam assistance at annealing temperatures from 100 degrees C to 300 degrees C on the residual stress and optical properties of the films was investigated. The refractive indices and extinction coefficients increased gradually as the temperature was increased from 100 degrees C to 200 degrees C and then declined gradually as the temperature was increased further from 200 degrees C to 300 degrees C. The film lost oxygen and slowly generated lower suboxides as the annealing temperature was reduced below 200 degrees C, as determined by x-ray photoelectron spectroscopy (XPS). As the annealing temperature increased above 200 degrees C, the lower suboxides began to capture oxygen and form stable oxides. XPS measurements were made to verify both the binding energy associated with the Ti 2p line and the variation of the O 1s line. A Twyman-Green interferometer was employed for phase-shift interferometry to study the residual stress. The residual stress declined as the temperature was reduced from 100 degrees C to 200 degrees C because the lower suboxides reduced the stress in the film. Above 200 degrees C, the film began to capture oxygen, so the residual stress rose. At 300 degrees C, the film was no longer amorphous as the anatase was observed by x-ray diffraction.

The measurement of thin film stress using phase shifting interferometry

Abstract A new technique for determining the stress of thin films is described. This technique combines digital phase shifting interferometry with image-processing software. A circular disc polished on one side is used as the coated substrate during film deposition. The average stress in thin films can be derived by comparing the deflection of the substrate before and after film deposition. The deflection of the substrate by the deposited film is obtained by the phase map. Using the Zernike polynomial fitting algorithm, a three-dimensional contour map is generated from the polynomial coefficients to visualize the deformation of the thin film and to examine the tensile or compressive stress after film deposition. Four oxide films prepared by ionbeam sputter deposition are investigated for their film stresses. The experimental results show that the stress values are concordant with measurements using other methods.

Residual stress in Ta2O5-SiO2 composite thin-film rugate filters prepared by radio frequency ion-beam sputtering

Ta-Si oxide composite thin-film rugate filters were prepared by radio frequency ion-beam sputtering and their residual stress and substrate deflections were measured. The residual stress and substrate deflection of these composite film rugate filters were less than that of notch filters made from a series of discrete quarter-wave layers with alternate high and low indices because of the smooth modulation of composition and no interface structure of the rugate filter.

Effect of rapid-thermal-annealed TiN barrier layer on the Pt/BST/Pt capacitors prepared by RF magnetron co-sputter technique at low substrate temperature

Abstract This investigation reports the effect of rapid-thermal-annealing (RTA) on metallic barrier TiN against the interdiffusions of Ti and Si into barium strontium titanate (BST) in Pt/BST/Pt/TiN/Ti/Si capacitors. In the integration of BST capacitors, the thermal budget of the BST deposition would cause the inter-diffusions of Ti and Si from Ti adhesion layer and Si plug respectively. This event would degrade the BST capacitors. To address this issue, rapid-thermal-annealed TiN barriers were deposited between the bottom electrode Pt and adhesion layer Ti. Optimal RTA condition for TiN were found in this experiment. Excellent electrical characteristics of Pt/BST/Pt/TiN/Ti/Si capacitors, including high dielectric constant (er=320), low leakage current (1.5×10−8 A/cm2) under 0.1 MV/cm, and greater than 10 year lifetime under 1.6 MV/cm were obtained with Ar+O2 mixed ambient at a low substrate temperature (300°C).

Residual stress in obliquely deposited MgF2 thin films.

MgF(2) films with a columnar microstructure are obliquely deposited on glass substrates by resistive heating evaporation. The columnar angles of the films increases with the deposition angle. Anisotropic stress does not develop in the films with tilted columns. The residual stresses in the films depend on the deposition and columnar angles in a columnar microstructure.

Effects of temperature on columnar microstructure and recrystallization of TiO2 film produced by ion-assisted deposition.

Titanium oxide thin films were deposited by electron-beam evaporation with ion-beam-assisted deposition. The effect of the substrate temperature and annealing temperature on the columnar microstructure and recrystallization of titanium oxide was studied. The values of the refractive index varied from 2.26 to 2.4, indicating that the different substrate temperatures affected the film density. X-ray diffraction revealed that all films were amorphous as deposited. At annealing temperatures from 100 degrees C to 300 degrees C, only the anatase phase was formed. As the substrate temperature increased from 150 degrees C to 200 degrees C to 250 degrees C, the recrystallization temperature fell from 300 degrees C through 250 degrees C to 200 degrees C. Changing the substrate temperature resulted in the formation of various types of columnar microstructure, as determined by scanning-electron microscopy. Different columnar structures resulted in different surface morphologies, as measured by atomic-force microscopy.