Chengfang Li

Temperature effect of the local structure in liquid Sb studied with x-ray absorption spectroscopy

The temperature dependence of the local structure of liquid Sb has been studied by x-ray absorption spectroscopy. It is shown that about 10% of the atoms with coordination of 3 and weak Peierls distortion exist in liquid Sb just above its melting point. The Peierls distortion weakens gradually with increasing temperature and vanishes at about 750 degrees C. This structural variation in liquid Sb is different from the normal liquid-liquid phase transition. This work reveals the relationship between the variation in the local structure and the change in the physical properties, such as the electrical resisitvity of liquid Sb, with temperature. The complete agreement between the measured electrical resistivity values during heating and cooling processes suggests that the structural units with the features of a rhombohedron appear above the melting point of Sb during solidification.

Subband separation energy dependence of intersubband relaxation time in wide quantum wells

Subband separation energy dependence of intersubband relaxation time in a wide quantum well (250 A) was studied by steady-state and time-resolved photoluminescence. By applying a perpendicular electrical field, the subband separation energy in the quantum well is continuously tuned from 21 to 40 meV. As a result, it is found that the intersubband relaxation time undergoes a drastic change from several hundred picoseconds to subpicoseconds. It is also found that the intersubband relaxation has already become very fast before the energy separation really reaches one optical phonon energy.

Suppression of sequential tunneling current by a perpendicular magnetic field in a three-barrier, two-well heterostructure

When an intersubband relaxation is involved in vertical transport in a tunneling heterostructure, the magnetic suppression of the intersubband LO or LA phonon scattering may also give rise to a noticeable depression of the resonant tunneling current, unrelated to the Coulomb correlation effect. The slowdown of the intersubband scattering rate makes fewer electrons able to tunnel resonantly between two adjacent quantum wells (QWs) in a three-barrier, two-well heterostructure. The influence of the magnetic field on the intersubband relaxation can be studied in an explicit way by a physical model based on the dynamics of carrier populations in the ground and excited subbands of the incident QW.

Photoluminescence characteristics of GaAs/AlGaAs quantum dot arrays fabricated by dry and dry-wet etching

GaAs/AlGaAs quantum dot arrays with different dot sizes made by different fabrication processes were studied in this work. In comparison with the reference quantum well, photoluminescence (PL) spectra from the samples at low temperature have demonstrated that PL peak positions shift to higher energy side due to quantization confinement effects and the blue-shift increases with decreasing dot size, PL linewidths are broadened and intensities are much reduced. It is also found that wet chemical etching after reactive ion etching can improve optical properties of the quantum dot arrays.

Photoluminescence Investigation of Charge Build-Up Process in the Emitter of a Double-Barrier Resonant Tunneling Structure

Charge build-up process in the emitter of a double-barrier resonant tunneling structure is studied by using photoluminescence spectroscopy. Clear evidence is obtained that the charge accumulation in the emitter keeps almost constant with bias voltages in the resonant regime, while it increases remarkably with bias voltages beyond resonant regime. The optical results are in good agreement with the electrical measurement. It is demonstrated that the band gap renormalization plays a certain role in the experiment.

Quantum interference effect in GaAs/AlGaAs double quantum wells

Abstract Quantum interference properties of GaAs AlGaAs symmetric double quantum wells were investigated in a magnetic field parallel to heterointerfaces at 1.9 K. For two types of samples used in our experiments, two GaAs quantum wells with the same width of 60 A are separated by an AlGaAs barrier layer of 120 A and 20 A thick, respectively. The channels with the length of 2 μm are defined by alloyed ohmic contacts. The conductance oscillation as a function of the magnetic flux Φ(= B s) was observed and oscillation period is approximately equal to h e . The results are in agreement with the theoretical expectation of the Aharonov-Bohm effect. Conductance oscillations are apparent slightly in the samples with a thinner AlGaAs barrier.