Chenggong Wang

Efficient, high yield perovskite photovoltaic devices grown by interdiffusion of solution-processed precursor stacking layers

We report on an interdiffusion method to fabricate pin-hole free perovskite films using a low temperature (<105 °C) solution process. A high efficiency of 15.4%, with a fill factor of ∼80%, was achieved for the devices under one sun illumination. The interdiffusion method results in high device yield, with an efficiency of above 14.5% for more than 85% of the devices.

High Performance All-Polymer Solar Cell via Polymer Side-Chain Engineering

Acknowledge support from the Office of Naval Research (N00014-14-1-0142), KAUST Center for Advanced Molecular Photovoltaics at Stanford and the Stanford Global Climate and Energy Program, NSF DMR-1303742 and the National Natural Science Foundation of China (Projects 21174004 and 21222403). Soft X-ray characterization and analysis by NCSU supported by the U.S. Department of Energy, Office of Science, Basic Energy Science, Division of Materials Science and Engineering under Contract DE-FG02-98ER45737. Soft X-ray data was acquired at beamlines 11.0.1.2 at the Advanced Light Source, which is supported by the Director, Office of Science, Office of Basic Energy Sciences, of the U. S. Department of Energy under Contract No. DE-AC02-05CH11231. We thank Professor Michael D. McGehee, Dr. George F. Burkhard and Dr. Eric T. Hoke for their help in discussion of the recombination mechanism.

Soft x-ray scattering facility at the Advanced Light Source with real-time data processing and analysis

We present the development and characterization of a dedicated resonant soft x-ray scattering facility. Capable of operation over a wide energy range, the beamline and endstation are primarily used for scattering from soft matter systems around the carbon K-edge (∼285 eV). We describe the specialized design of the instrument and characteristics of the beamline. Operational characteristics of immediate interest to users such as polarization control, degree of higher harmonic spectral contamination, and detector noise are delineated. Of special interest is the development of a higher harmonic rejection system that improves the spectral purity of the x-ray beam. Special software and a user-friendly interface have been implemented to allow real-time data processing and preliminary data analysis simultaneous with data acquisition.

Understanding the formation and evolution of interdiffusion grown organolead halide perovskite thin films by thermal annealing

Organolead trihalide perovskites are emerging excellent active materials for thin film solar cells. Here, the formation and evolution of methylammonium lead iodide perovskite thin films grown by the low-temperature thermal annealing induced interdiffusion process are investigated. It is found that thermal annealing not only drives the formation of perovskite but also affects the morphology, optoelectronic properties and correlated device performance. Thermal annealing at 105 °C quickly drives the formation of phase-pure perovskite in a short time of 15 min, and continued thermal annealing up to two hours continuously increases the perovskite crystallinity and grain size without losing film continuity or coverage. The measured Hall mobility increases monotonically to 36.0 cm2 V−1 s−1 upon annealing, which is correlated with the increased crystallinity and grain size. Device efficiencies increase with an increased short circuit current density and fill factor with a longer annealing time up to two hours, and the highest device efficiency of 13.4% is achieved. It is found that the reduction of work function in the perovskite films, caused by the increased annealing duration, is linearly correlated with the open circuit voltage loss, which points out a path for the further increase of the device efficiency.

Evaluation of Solution-Processable Carbon-Based Electrodes for All-Carbon Solar Cells

Carbon allotropes possess unique and interesting physical, chemical, and electronic properties that make them attractive for next-generation electronic devices and solar cells. In this report, we describe our efforts into the fabrication of the first reported all-carbon solar cell in which all components (the anode, active layer, and cathode) are carbon based. First, we evaluate the active layer, on standard electrodes, which is composed of a bilayer of polymer sorted semiconducting single-walled carbon nanotubes and C(60). This carbon-based active layer with a standard indium tin oxide anode and metallic cathode has a maximum power conversion efficiency of 0.46% under AM1.5 Sun illumination. Next, we describe our efforts in replacing the electrodes with carbon-based electrodes, to demonstrate the first all-carbon solar cell, and discuss the remaining challenges associated with this process.

Tuning the threshold voltage of carbon nanotube transistors by n-type molecular doping for robust and flexible complementary circuits

Significance Highly noise-resistant logic gates are needed for large-scale circuits. This was challenging previously with carbon nanotube circuits due to the lack of control of the threshold voltages of nanotube transistors. We demonstrate the use of dopants to tune the charge carrier density of carbon nanotubes films and hence precisely control the threshold voltages of carbon nanotube transistors. This doping method is highly versatile and can be applied through inkjet printing. With this technique, we demonstrate highly noise-resistant and low power consumption carbon nanotube logic gates on a flexible substrate. This work places carbon nanotubes in a highly competitive position for large-scale solution-processed flexible circuits. Tuning the threshold voltage of a transistor is crucial for realizing robust digital circuits. For silicon transistors, the threshold voltage can be accurately controlled by doping. However, it remains challenging to tune the threshold voltage of single-wall nanotube (SWNT) thin-film transistors. Here, we report a facile method to controllably n-dope SWNTs using 1H-benzoimidazole derivatives processed via either solution coating or vacuum deposition. The threshold voltages of our polythiophene-sorted SWNT thin-film transistors can be tuned accurately and continuously over a wide range. Photoelectron spectroscopy measurements confirmed that the SWNT Fermi level shifted to the conduction band edge with increasing doping concentration. Using this doping approach, we proceeded to fabricate SWNT complementary inverters by inkjet printing of the dopants. We observed an unprecedented noise margin of 28 V at VDD = 80 V (70% of 1/2VDD) and a gain of 85. Additionally, robust SWNT complementary metal−oxide−semiconductor inverter (noise margin 72% of 1/2VDD) and logic gates with rail-to-rail output voltage swing and subnanowatt power consumption were fabricated onto a highly flexible substrate.

Degradation by Exposure of Coevaporated CH3NH3PbI3 Thin Films

Degradation of co-evaporated CH3NH3PbI3 thin films was investigated with x-ray photoelectron spectroscopy (XPS) and x-ray diffraction (XRD) as the films were subjected to exposure of oxygen, dry air, ambient, or H2O. The co-evaporated thin films have consistent stoichiometry and crystallinity suitable for detailed surface analysis. The results indicate that CH3NH3PbI3 is not sensitive to oxygen. Even after 10^13 Langmuire (L, one L equals 10^-6 torr sec) oxygen exposure, no O atoms could be found on the surface. The film is not sensitive to dry air as well. A reaction threshold of about 2*10^10 L is found for H2O exposure, below which no CH3NH3PbI3 degradation takes place and the H2O acts as an n-dopant. Above the threshold, the film begins to decompose, and the amount of N and I decrease quickly, leaving the surface with PbI2, amorphous C and O contamination.

Electronic structure evolution of fullerene on CH3NH3PbI3

The thickness dependence of fullerene on CH3NH3PbI3 perovskite film surface has been investigated by using ultraviolet photoemission spectroscopy (UPS), X-ray photoemission spectroscopy (XPS), and inverse photoemission spectroscopy (IPES). The lowest unoccupied molecular orbital and highest occupied molecular orbital (HOMO) can be observed directly with IPES and UPS. It is observed that the HOMO level in fullerene shifts to lower binding energy. The XPS results show a strong initial shift of core levels to lower binding energy in the perovskite, which indicates that electrons transfer from the perovskite film to fullerene molecules. Further deposition of fullerene forms C60 solid, accompanied by the reduction of the electron transfer. The strongest electron transfer happened at 1/4 monolayer of fullerene.

Surface analytical investigation on organometal triiodide perovskite

In a little over a year, there has been an unexpected breakthrough and rapid evolution of highly efficient solid-state hybrid solar cells based on organometal trihalide perovskite materials. This technology has the potential to produce solar cells with the very highest efficiencies while retaining the very lowest cost. The authors have measured the electronic density of states of CH3NH3PbI3 using ultraviolet photoemission spectroscopy (UPS), inverse photoemission spectroscopy (IPES), and x-ray photoemission spectroscopy (XPS). The valence band maximum and conduction band minimum positions are obtained from the UPS and IPES spectra, respectively, by linear extrapolation of the leading edges. The authors investigate the Au/perovskite and C60/perovskite interfaces by UPS and XPS. An interface dipole of 0.1 eV is observed at Au/perovskite interface. The energy levels of perovskite shift upward by ca.0.4 eV with Au coverage of 64 A upon it, resulting in band bending, hence a built-in field in perovskite that e...

Electronic structure evolution and energy level alignment at C60/4,4′-cyclohexylidenebis[N,N-bis(4-methylphenyl) benzenamine]/MoOx/indium tin oxide interfaces

The electronic structure evolution and energy level alignment have been investigated at interfaces comprising fullerene (C60)/4,4′-cyclohexylidenebis[N,N-bis(4-methylphenyl) benzenamine] (TAPC)/ molybdenum oxide (MoOx)/ indium tin oxide with ultraviolet photoemission spectroscopy and inverse photoemission spectroscopy. With deposition of TAPC upon MoOx, a dipole of 1.58 eV was formed at the TAPC/MoOx interface due to electron transfer from TAPC to MoOx. The highest occupied molecular orbital (HOMO) onset of TAPC was pinned closed to the Fermi level, leading to a p-doped region and thus increasing the carrier concentration at the very interface. The downward band bending and the resulting built-in field in TAPC were favorable for the hole transfer toward the TAPC/MoOx interface. The rigid downward shift of energy levels of TAPC indicated no significant interface chemistry at the interface. With subsequent deposition of C60 on TAPC, a dipole of 0.27 eV was observed at the C60/TAPC heterojunction due to the ...