Cheol-Hee Park

Transparent thin-film transistors with zinc indium oxide channel layer

High mobility, n-type transparent thin-film transistors (TTFTs) with a zinc indium oxide (ZIO) channel layer are reported. Such devices are highly transparent with ∼85% optical transmission in the visible portion of the electromagnetic spectrum. ZIO TTFTs annealed at 600 °C operate in depletion-mode with threshold voltages −20 to −10V and turn-on voltages ∼3V less than the threshold voltage. These devices have excellent drain current saturation, peak incremental channel mobilities of 45–55cm2V−1s−1, drain current on-to-off ratios of ∼106, and inverse subthreshold slopes of ∼0.8V∕decade. In contrast, ZIO TTFTs annealed at 300 °C typically operate in enhancement-mode with threshold voltages of 0–10V and turn-on voltages 1–2V less than the threshold voltage. These 300 °C devices exhibit excellent drain–current saturation, peak incremental channel mobilities of 10–30cm2V−1s−1, drain current on-to-off ratios of ∼106, and inverse subthreshold slopes of ∼0.3V∕decade. ZIO TTFTs with the channel layer deposited ne...

Phosphors for plasma display panels

Excitation and emission characteristics were reviewed for phosphors which were reported, applied, or suggested for the plasma display panel (PDP). Correlation of luminescence characteristics to the host crystal structure and the activator of the phosphor was explained. Improvements of the PDP phosphor for the practicality were considered.

Thin-film transistors with amorphous indium gallium oxide channel layers

Indium gallium oxide-based thin-film transistors (TFTs) are formed using rf magnetron sputtering of the channel layer. These TFTs exhibit qualitatively ideal characteristics, including excellent drain current saturation. Various deposition parameters, annealing treatments, and stoichiometries are explored. Varying the oxygen partial pressure is found to have a significant effect on device performance. Decreasing the oxygen partial pressure increases the incremental channel mobility μinc while decreasing (becomes more negative) the turn-on voltage Von. Increasing indium concentration of the channel material increases μinc, while decreasing Von. The maximum value of μinc, ∼27cm2V−1s−1, is obtained by annealing at 600°C, with corresponding Von and drain current on-to-off ratio values of approximately −14V and >106, respectively. Additionally, TFTs subjected to a 200°C postdeposition annealing exhibit μinc and Von of ∼19cm2V−1s−1 and 2V, respectively.

Vacuum ultraviolet optical properties of (La, Gd)PO4 :RE3+ (RE = Eu, Tb)

Vacuum ultraviolet excitation spectra of phosphors (La,Gd)PO4:RE3+ (RE = Eu or Tb) and X-ray photoelectron spectra of LaPO4 and GdPO4 are investigated. The vacuum ultraviolet excitation intensity of (La,Gd)PO4:RE3+ is enhanced with the increasing of Gd3+ content, which implies that Gd3+ plays an intermediate role in energy transfer from host absorption band to RE3+. When Gd3+ is doped into LaPO4:Eu, charge transfer band (CT band) begins to shift to higher energy region and the overlap degree of CT band and the host absorption band gets greater with more Gd3+ doped into LaPO4. These results suggest that the dopant (Gd3+) gives an important influence on energy transfer efficiency. The top of LaPO4 valance band is formed by the 2p level of O2-, whereas that of GdPO4 valance band is formed by the 2p level of O2- and the 4f level of Gd3+, showing the differences in band structures between LaPO4 and GdPO4.

Infrared spectra and VUV excitation properties of BaLnB9O16:Re (Ln=La, Gd; Re=Eu, Tb)

The infrared spectra of BaLnB(9)O(16):Re, along with the VUV excitation spectra, have been measured. The spectra were tentatively interpreted in terms of the data on absorptions of the borate groups and band structure. It was observed that there are absorption due to BO3 and BO4 groups, indicating that there are BO3 and BO4 groups in BaLnB(9)O(16). It is found that absorption of the borate groups is located in the range from 120 to 170 mn. This result reveals that there is an energy transfer from host to the rare earth ions. It also observed that the energy of charge transfer band, the host absorption, the total crystal field splitting of d-levels of Tb3+ increase with the decrease in the Ln(3+) radius

High electron mobility W-doped In2O3 thin films by pulsed laser deposition

High electron mobility thin films of In2−xWxO3+y(0⩽x⩽0.075) were prepared on amorphous SiO2 and single-crystal yttria-stablized zirconia (001) substrates by pulsed laser deposition. Mobilities ranged between 66 and 112cm2∕Vs depending on the substrate type and deposition conditions, and the highest mobility was observed at a W-dopant concentration of x∼0.03. A small band gap shift was detected from films with increasing electron carrier density; the electron effective mass calculated from Burstein-Moss theory was 0.3me. In2−xWxO3+y films have high visible transmittance of ∼80%.

p-type conductivity in wide-band-gap BaCuQF (Q=S,Se)

BaCuQF (Q=S,Se) materials, candidate transparent p-type conductors, were prepared by solid-state reaction, and their bulk electrical and optical properties were evaluated. The room-temperature Seebeck coefficient and electrical conductivity of undoped BaCuQF pellets were +56 μV/K and 0.088 S/cm, respectively, for the sulfide fluoride, and +32 μV/K and 0.061 S/cm, respectively, for the selenide fluoride. The conductivity was greatly enhanced by the substitution of several percent of K for Ba; the highest conductivities were 82 S/cm for Ba0.9K0.1CuSF and 43 S/cm for Ba0.9K0.1SeF. The band gaps for Q=S and Q=Se were measured to be 3.2 and 3.0 eV, respectively. Undoped BaCuSF exhibits strong red luminescence near 630 nm under ultraviolet excitation.

Structure and luminescence of SrY{sub 2}O{sub 4}:Eu

Powder samples of SrY{sub 2(1{minus}x)}O{sub 4}:Eu{sub 2x} were prepared at 1,000 C by the combustion method. The emission spectrum of SrY{sub 2}O{sub 4}:Eu{sup 3+} showed two kinds of Eu{sup 3+} emissions, which could be assigned to Eu{sup 3+} ions in the Sr site and the Y site. Reducing SrY{sub 2}O{sub 4}:Eu brought a broad band emission around 470 nm, which could be attributed to crystal defects introduced by the reduction. The energy transfer from defects to Eu{sup 3+} ions was observed to be more effective to the Sr site than to the Y site.

Density of state effective mass and related charge transport properties in K-doped BiCuOSe

We report the enhanced p-type conduction properties in BiCuOSe by doping of monovalent ions (K+). As compared with undoped BiCuOSe, simultaneous increase in both the carrier concentration and the Hall mobility was achieved in the K-doped BiCuOSe. The origin of the enhancement was discussed in terms of the two-band structure in the valence band of the BiCuOSe, and the density of state effective masses of the heavy (∼1.1 me) and light hole (∼0.18 me) were estimated by using Pisarenko relation.

Valence band structure of BaCuSF and BaCuSeF

The origin of high hole conduction in BaCuQF (Q=S,Se) was investigated by photoemission measurements and full-potential linearized augmented plane wave band-structure calculations. In both compounds, the large dispersion near the top of the valence band is realized by admixed states of Cu 3d and S 3p or Se 4p orbitals, indicating that high hole mobility is possible. In addition, the valence band maxima of BaCuQF are much closer to the vacuum level than most p-type transparent oxides, which leads to high hole stability in the valence band. The high hole mobility and stability in BaCuQF relative to most oxides afford a significantly larger p-type conductivity.The origin of high hole conduction in BaCuQF (Q=S,Se) was investigated by photoemission measurements and full-potential linearized augmented plane wave band-structure calculations. In both compounds, the large dispersion near the top of the valence band is realized by admixed states of Cu 3d and S 3p or Se 4p orbitals, indicating that high hole mobility is possible. In addition, the valence band maxima of BaCuQF are much closer to the vacuum level than most p-type transparent oxides, which leads to high hole stability in the valence band. The high hole mobility and stability in BaCuQF relative to most oxides afford a significantly larger p-type conductivity.