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Featured researches published by Cheol-Ho Park.


SID Symposium Digest of Technical Papers | 2008

9.2: Sequential Lateral Solidification (SLS) Process for Large Area AMOLED

Jae Beom Choi; Young-Jin Chang; Cheol-Ho Park; Young-Il Kim; Ji-Hye Eom; Hyung Don Na; In-Do Chung; Seong Hyun Jin; Young-Rok Song; Beom-Rak Choi; Hyo Seok Kim; Kyong-Tae Park; Chi-Woo Kim; Jun-Hyung Souk; Yangsun Kim; Baehyun Jung; Kee-Chan Park

We have demonstrated that the sequential lateral solidification (SLS) technology can be utilized for the large area AMOLED. An optimized SLS process provides us with polycrystalline Si films with well-controlled grain size and location. The thin film transistors (TFTs) with SLS-processed Si films show high performance with desirable uniformity. 14″ WXGA (1280×RGB×768) AMOLEDs were fabricated with SLS-processed TFT backplanes. We utilized RGB evaporation process with fine metal mask. The novel delta pixel arrangement results in increased aperture ratio and wider FMM process window. The advantage of SLS process will be discussed.


SID Symposium Digest of Technical Papers | 2009

9.2: Line-Scan Sequential Lateral Solidification Process for AMOLED Application

Jae Beom Choi; Cheol-Ho Park; In-Do Chung; Kwon-Hyung Lee; Hoon Kee Min; Chi-Woo Kim; Sang Soo Kim

We have demonstrated that thin film transistor backplanes for AMOLED could be fabricated with line-scan sequential lateral solidification (SLS) process. with 4 μm × 730 mm single laser beamlet, directional and two-shot SLS processes were carried out to make polycrystalline Si films. The geometry for driving TFTs, which can provide sufficient uniformity of TFT performances, is that the source-drain direction is perpendicular to the grain growth direction. 14″ WXGA (1366×RGB×768) AMOLEDsfor TV application were fabricated by utilizing different TFT geometry for driving TFTs and switching TFTs. The advantages of the line-scan SLS system are (1) it can provide higher productivity than the conventional laser system and (2) large displays over 50″ can be manufactured without scan overlap area.


Archive | 2006

Laser apparatus and manufacturing method of thin film transistor using the same

Cheol-Ho Park


Archive | 2012

Mask for crystallizing a semiconductor layer and method of crystallizing a semiconductor layer using the same

Cheol-Ho Park


Archive | 2012

THIN FILM TRANSISTOR, METHOD OF MANUFACTURING THE SAME, AND ORGANIC LIGHT EMITTING DISPLAY APPARATUS

Byoung-Kwon Choo; Hyun-Been Hwang; Kwon-Hyung Lee; Cheol-Ho Park


Archive | 2010

Lithium secondary battery and method of controlling short resistance thereof

Joongheon Kim; Cheol-Ho Park; Jin-Uk Lee


Archive | 2011

Lithium secondary battery, method of controlling short circuit resistance thereof and polymer electrolyte composition

Joongheon Kim; Cheol-Ho Park; Jin-Uk Lee


Archive | 2011

MASK FOR SEQUENTIAL LATERAL SOLIDIFICATION AND SEQUENTIAL LATERAL SOLIDIFICATION APPARATUS HAVING THE SAME

Kwon-Hyung Lee; Cheol-Ho Park; In-Do Chung; Jae-Beom Choi


Archive | 2012

Crystallization apparatus using sequential lateral solidification

Cheol-Ho Park


Archive | 2014

LASER BEAM ANNEALING APPARATUS AND METHOD OF CONTROLLING THE SAME

Byoung-Kwon Choo; Cheol-Ho Park; Do-Yeob Kim

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