Cheol Kim

Highly conformal SiO2/Al2O3 nanolaminate gas-diffusion barriers for large-area flexible electronics applications

The present study demonstrates a flexible gas-diffusion barrier film, containing an SiO(2)/Al(2)O(3) nanolaminate on a plastic substrate. Highly uniform and conformal coatings can be made by alternating the exposure of a flexible polyethersulfone surface to vapors of SiO(2) and Al(2)O(3), at nanoscale thickness cycles via RF-magnetron sputtering deposition. The calcium degradation test indicates that 24 cycles of a 10/10 nm inorganic bilayer, top-coated by UV-cured resin, greatly enhance the barrier performance, with a permeation rate of 3.79 × 10(-5) g m(-2) day(-1) based on the change in the ohmic behavior of the calcium sensor at 20 °C and 50% relative humidity. Also, the permeation rate for 30 cycles of an 8/8 nm inorganic bilayer coated with UV resin was beyond the limited measurable range of the Ca test at 60 °C and 95% relative humidity. It has been found that such laminate films can effectively suppress the void defects of a single inorganic layer, and are significantly less sensitive against moisture permeation. This nanostructure, fabricated by an RF-sputtering process at room temperature, is verified as being useful for highly water-sensitive organic electronics fabricated on plastic substrates.

A novel tensile Si (n) and compressive SiGe (p) dual-channel CMOS FinFET co-integration scheme for 5nm logic applications and beyond

A novel tensile Si (tSi) and compressive SiGe (cSiGe) dual-channel FinFET CMOS co-integration scheme, aimed at logic applications for the 5nm technology node and beyond, is demonstrated for the first time, showing electrical performance benefits and excellent co-integration feasibility. A Strain-Relaxed SiGe Buffer (SRB) layer is introduced as buried stressor and successfully transfers up to ∼1 GPa uniaxial tensile and compressive stress to the Si/SiGe n-/p-channels simultaneously. As the result, both tSi and cSiGe devices show a 40% and 10% electron and hole mobility gain over unstrained Si, respectively. Through a novel gate stack solution including a common interfacial layer (IL), HK, and single metal gate for both n- and pFET, secured process margin for 5nm gate length, low interface trap density (Dit) for SiGe channel and threshold voltage (Vt) target for both the Si and SiGe device are successfully demonstrated. Lastly, reliability investigation shows that tSi and cSiGe, employing the newly developed common gate stack scheme, possess superior reliability characteristics compared with those of equivalent Si devices.

Development of world's largest 21.3” LTPS LCD using sequential lateral solidification (SLS) technology

Abstract The world largest 21.3” LTPS LCD has been successfully developed using SLS crystallization technology. Integration of gate circuit, transmission gate and level shifter was successfully performed in a large area display. Uniform and high performance of high quality grains of SLS technology make it possible to realize a uniform large size LTPS TFT‐LCD with half the number of data driver ICs that is typically used in a‐Si LCD. High aperture ratio of 65 % was achieved using an organic inter insulating method which lead to a high brightness of 500 cd/cm2.

Constrained Warping of Thin-Walled Hollow Composite Beams

where the functions us, un, and u are the curvilinear tangential, normal, and axial displacements, respectively. The functions uo(x), vo(x), and wo(x) represent the rigid body translations along the x, y, and z axes,respectively; the variables u y(x) andu z(x) denotethe rotations about the z and y axes, respectively; and h (x) is the angle of twist. The function w c(x, s) denotes the constrained warping. The equations y = A y(s) and z = A z(s) de® ne the midline contour in the beam cross section, and the prime denotes differentiation with respectto x. The functions rs and rn are de® ned as rs(s) = A y(s) dA

P‐65: Flexible Gas‐Barrier Technologies with Inorganic Nanolaminate, Surface Modifications and Its Measurements

The paper present transparent gas barrier technologies such as RF-sputtered inorganic nanolaminate, hydrophobic/hydrophilic surface modifications, and its measurements. Highly conformal and uniform deposition of Al2O3 and SiO2 barriers and hydrophilic dots on nano-imprinted hydrophobic surface structures successfully reduced water permeation rates according to the Ca degradation measurements.