Chetan K. Kasar

Effect of Post Annealing Temperature on Cerium Doped ZnO Nanostructures

In this paper, the effect of post annealing temperature for 5% Cerium doped ZnO thin films have been investigated. Films have been deposited on to the glass substrate using spin coating method. The structural and optical properties of the films were characterized using X-ray diffractometer and UV-spectrophotometer. Transmission of the films was found to be increase with increasing post annealing temperature. Average transmission of all the films was found to be more than 90%. Optical band gap show a minor variation with post annealing temperature. Nanostructures of cerium doped ZnO have been confirmed through AFM.

Study of Varying Tubes in Carbon Nanotube FET Based Inverter

In today’s era, Carbon Nanotubes (CNT) are becoming more popular than CMOS due to its electrical and mechanical properties. The devices using Carbon Nanotube FET’s (CNTFET) provide fast switching, high electron mobility, high current density as well as high transconductance. In this paper a Stanford Leland junior universities standard mode of CNTFET is used for implementing HSPICE . This work involves study of varying number of nanotubes in CNTFET based inverter . Initially the optimization for gate oxide thickness with number of nanotubes has been done. The optimized result shows that maximum average output power of 2.0503 µW is observed with gate oxide thickness of 4 nm and 40 nanotubes. These optimized parameters were used to study effect on varying number of CNT on gain of CNT based inverter. The study reveals that increasing number of CNT’s does not affect on the gain.

Structural and Optical Properties of Single Crystalline Cerium Doped ZnO Thin Films

Ce doped ZnO thin films were prepared on a glass substrate by sol-gel spin coating technique. Effect of post annealing temperature from 250 to 450 °C on structural and optical properties of Ce doped ZnO thin films were studied. The influence of temperature on transparency, bandgap and crystallite size of Ce doped ZnO was observed. The nano thin films were characterized by X-ray Diffractometer and UV-Vis Spectrophotometer. Crystallinity of the deposited thin films was found to be improved with temperature. Increasing the post annealing temperature (250°–450 °C), increases the grain size of the samples gradually from 15.41 to 26.54 nm. In addition to the effect of post annealing temperature, the influence of average transmission, absorption, and band gap of the Ce doped ZnO thin films was investigated for optoelectronics applications.

Single Crystalline Films of Zinc Oxide for Nanorod Applications

Zinc oxide (ZnO) thin films were deposited by sol–gel spin coating method on to the glass substrate. Effect of post annealing temperature on structural and optical properties has been investigated. The films were characterized by X-Ray diffraction (XRD) and spectrophotometer. Nanocrystalline films having grain size of 90.89 nm has been deduced from X-ray diffraction studies. The single crystalline nature of the films has been confirmed by single mighty peak obtained for (101) orientation. All the films exhibit good transparency more than 90 % in the visible region and average transmittance was found to be decreased with an increase in annealing temperature. The thickness of the films was found to be varying with different post annealing temperature. The post annealing temperature of 300 °C was found to be optimum with reference to the quality and physical parameters of ZnO. Results obtained show the potential applicability of ZnO for nano-rods.

Analysis of Tunneling Phenomenon and Electron Confinement in Quantum Nanowire

Using Transfer Matrix Method (TMM) the Eigen energy of the GaN/AlGaN quantum wire has been evaluated. Peak density results show the confinement and tunneling of electron distribution in quantum wire due to band offset of GaN (wire region) and AlGaN (barrier region). The impact of this band offset results in variation in Eigen energy and is significant in Tunneling phenomenon study to realize the transmission coefficient across the cross-section. Our analysis reveals that for wider wires transmission coefficient reaches to its peak for lower Eigen energy values. Likewise, increase in aluminum mole fraction in AlGaN decreases tunneling effect.