Chiara Modanese

Data of ALD Al2O3 rear surface passivation, Al2O3 PERC cell performance, and cell efficiency loss mechanisms of Al2O3 PERC cell

This data article is related to the recently published article ‘20.8% industrial PERC solar cell: ALD Al2O3 rear surface passivation, efficiency loss mechanisms analysis and roadmap to 24%’ (Huang et al., 2017) [1]. This paper is about passivated emitter and rear cell (PERC) structures and it describes the quality of the Al2O3 rear-surface passivation layer deposited by atomic layer deposition (ALD), in relation to the processing parameters (e.g. pre-clean treatment, deposition temperature, growth per cycle, and film thickness) and to the cell efficiency loss mechanisms. This dataset is made public in order to contribute to the limited available public data on industrial PERC cells, to be used by other researchers.

Data of the recombination loss mechanisms analysis on Al2O3 PERC cell using PC1D and PC2D simulations

This data article is related to our recently published article (‘20.8% industrial PERC solar cell: ALD Al2O3 rear surface passivation, efficiency loss mechanisms analysis and roadmap to 24%’, Huang et al., 2017 [1]) where we have presented a systematic evaluation of the overall cell processing and a cost-efficient industrial roadmap for PERC cells. Aside from the information already presented in Huang et al., 2017 [1], here we provide data related to Sectin 3 in Huang et al., 2017 [1] concerning the analysis of the recombination losses׳ mechanisms by PC1D V5.9 and PC2D simulations (Clugston and Basore, 1997, Basore and Cabanas-Holmen, 2011, Cabanas-Holmen and Basore, 2012 and Cabanas-Holmen and Basore, 2012.) [2], [3], [4], [5] on our current industrial Al2O3 PERC cell. The data include: i) PC2D simulations on J02, ii) the calculation of series resistance and back surface recombination velocity (BSRV) on the rear side metallization of PERC cell for the case of a point contact, and iii) the PC1D simulation on the cumulative photo-generation and recombination along the distance from the front surface. Finally, the roadmap of the solar cell efficiency for an industrial PERC technology up to 24% is presented, with the aim of providing a potential guideline for industrial researchers.

Vertically integrated modeling of light-induced defects: Process modeling, degradation kinetics and device impact

As photovoltaic (PV) device architectures advance, they turn more sensitive to bulk minority charge carrier lifetime. The conflicting needs to develop ever advancing cell architectures on ever cheapening silicon substrates ensure that various impurity-related light-induced degradation (LID) mechanisms will remain an active research area in the silicon PV community. Here, we propose vertically integrated defect modeling as a framework to accelerate the identification and mitigation of different light induced defects. More specifically, we propose using modeled LID-kinetics to identify the dominant LID mechanism or mechanisms within complete PV devices. Coupling the LID-kinetics model into a process model allows development of process guidelines to mitigate the identified LID-mechanism within the same vertically integrated simulation tool. We use copper as an example of a well-characterized light-induced defect: we model the evolution of copper during solar cell processing and light soaking, and then map the deleterious lifetime effect of Cu-LID onto device performance. We validate our model using intentionally Cu-contaminated material processed on an industrial PERC-line and find that our model reproduces the LID-behavior of the manufactured solar cells. We further show via simulations that Cu-LID can be mitigated by reducing the contact co-firing peak temperature, or the cooling rate after the firing process.

Rapid thermal anneal activates light induced degradation due to copper redistribution

While it is well known that copper impurities can be relatively easily gettered from the silicon bulk to the phosphorus or boron–doped surface layers, it has remained unclear how thermally stable the gettering actually is. In this work, we show experimentally that a typical rapid thermal anneal (RTA, a few seconds at 800u2009°C) used commonly in the semiconductor and photovoltaic industries is sufficient to release a significant amount of Cu species from the phosphorus-doped layer to the wafer bulk. This is enough to activate the so-called copper-related light-induced degradation (Cu-LID) which results in significant minority carrier lifetime degradation. We also show that the occurrence of Cu-LID in the wafer bulk can be eliminated both by reducing the RTA peak temperature from 800u2009°C to 550u2009°C and by slowing the following cooling rate from 40–60u2009°C/s to 4u2009°C/min. The behavior is similar to what is reported for Light and Elevated Temperature degradation, indicating that the role of Cu cannot be ignored when studying other LID phenomena. Numeric simulations describing the phosphorus diffusion and the gettering process reproduce the experimental trends and elucidate the underlying physical mechanisms.While it is well known that copper impurities can be relatively easily gettered from the silicon bulk to the phosphorus or boron–doped surface layers, it has remained unclear how thermally stable the gettering actually is. In this work, we show experimentally that a typical rapid thermal anneal (RTA, a few seconds at 800u2009°C) used commonly in the semiconductor and photovoltaic industries is sufficient to release a significant amount of Cu species from the phosphorus-doped layer to the wafer bulk. This is enough to activate the so-called copper-related light-induced degradation (Cu-LID) which results in significant minority carrier lifetime degradation. We also show that the occurrence of Cu-LID in the wafer bulk can be eliminated both by reducing the RTA peak temperature from 800u2009°C to 550u2009°C and by slowing the following cooling rate from 40–60u2009°C/s to 4u2009°C/min. The behavior is similar to what is reported for Light and Elevated Temperature degradation, indicating that the role of Cu cannot be ignored when ...