Chihiro Hasegawa

Ruthenium films deposited under H 2 by MOCVD using a novel liquid precursor

Ruthenium thin films were deposited under H2 using a novel liquid Ru precursor, bis(acetylacetonato)(η4-1,5-hexadiene)ruthenium, Ru(acac)2(hd). The resisitivity, cross section and surface morphology of the deposited Ru films were examined. The Ru films had a relatively low resistivity of about 90 µΩ·cm at 270°C. X-ray photoelectron spectroscopy (XPS) showed that the Ru films contained no carbon and oxygen impurities. The Ru film surface was fairly smooth, as measured by atomic force microscopy (AFM). The root-mean-square (RMS) roughness of the Ru films was 0.34nm. No incubation time of the formation of the Ru films was observed. The activation energy of the formation of the Ru films was found to be 0.51eV on the SiO2/Si substrates.

Novel Ruthenium(II) Precursor for Metal-Organic Chemical Vapor Deposition

Ruthenium thin films were deposited using a new novel Ru precursor, bis(acetylacetonato)(η4-1,5-hexadiene)ruthenium, Ru(acac)2(hd). Ru(acac)2(hd) is a brown viscous liquid and stable in moisture and air at room temperature. The resisitivity, microstructure and surface morphology of the deposited Ru thin films were examined. The Ru thin films had a low resistivity of 12.5 µΩcm at 360 °C. A very small amount of O2 gas (0.5% O2 gas concentration) is necessary as a reactant gas to decrease the resistivity of the Ru thin films. X-ray photoelectron spectroscopy (XPS) showed that the Ru thin films contained no carbon and oxygen impurities. The Ru thin film surface was fairly smooth, as measured by atomic force microscopy (AFM). The root-mean-square (RMS) roughness of the Ru thin films was 0.91 nm.