Chin-Pei Chen

Ultrahigh photocurrent gain in m-axial GaN nanowires

An ultrahigh photocurrent gain has been found in the ultraviolet-absorbed GaN nanowires with m-directional long axis grown by chemical vapor deposition. The quantitative results have shown the gain values at 5.0×104–1.9×105 of the GaN nanowires with diameters from 40to135nm are near three orders of magnitude higher than the values of 5.2×101–1.6×102 estimated from the thin film counterparts. The intensity-dependent gain study has shown that the gain value is very sensitive to the excitation intensity following an inverse power law and no gain saturation observed in this investigated intensity range from 0.75to250W∕m2. This behavior has strongly suggested a surface-dominant rather than trap-dominant high gain mechanism in this one-dimensional nanostructure. The strong carrier localization effect induced by the surface electric field in the GaN nanowires is also discussed.

Functionalized GaN nanowire-based electrode for direct label-free voltammetric detection of DNA hybridization

This study demonstrates the utility of functionalized GaN nanowires (GaNNWs) for electrochemical detection of nucleic acids, in aqueous solution, using cyclic voltammetry. In order to link probe DNA to the NW surface, we employed an organosulfur compound, 3-mercaptopropyl trimethoxysilane (MPTS), to functionalize the GaNNW surface. Interestingly, the MPTS-modified GaNNWs exhibited a potential window of 4.5 V, the widest reported to date, with very low background current, which provides an advantage for sensing DNA immobilization/hybridization, down to sub-pM concentration, via monitoring adenine and guanine oxidation. The oxidation of guanine was characterized by its peak potential and peak current, where the former serves as a fingerprint for DNA hybridization and the latter as a parameter for the extent of hybridization. Moreover, the GaNNW-based sensor exhibited excellent consistency in hybridization-dehybridization-rehybridization cycles.

Platinum nanoparticles embedded in pyrolyzed nitrogen-containing cobalt complexes for high methanol-tolerant oxygen reduction activity

High oxygen reduction activity of methanol-tolerant catalysts was successfully reported using platinum nanoparticles embedded in cobalt-based nitrogen-containing complexes supported on carbon blacks (Pt–N-complex/C). The oxygen reduction reaction (ORR) of the Pt–N-complex/C was attributed to four-electron transfer pathway in which oxygen was directly reduced to water, yielding four electrons. In a methanol-containing solution, the platinum intrinsically favors the methanol oxidation reaction over the ORR, which is a major drawback for direct methanol fuel cells (DMFCs). In comparison, when the Pt–N-complex/C is introduced in a methanol-containing solution, not only is the methanol oxidation suppressed but also the four-electron-transfer in the ORR is maintained up to the diffusion-limiting region. Physicochemical characterization of the Pt–N-complex/C indicates that pyrrolic N-type poly-aromatic hydrocarbons were formed in a network structure around the catalysts and prevented them from the methanol oxidation reaction. In a DMFC test at elevated methanol concentrations, the one with the Pt–N-complex/C cathode showed superior stability over the one with the Pt-based cathode, which may offer a solution to the methanol crossover problem in DMFCs.

Optical properties of functionalized GaN nanowires

The evolution of the optical properties of GaN nanowires (NWs) with respect to a sequence of surface functionalization processes is reported; from pristine hydroxylated to finally, 3-mercaptopropyltrimethoxysilane (MPTMS) functionalized GaN NWs. Photoluminescence, Raman, stationary, and time-resolved photoluminescence measurements were applied to investigate the GaN NWs with different surface conditions. A documented surface passivation effect of the GaN NWs induced by the MPTMS functionalization is determined based on our characterization results. A hypothesis associated with the surface band bending and the defect levels near the band edges is proposed to explain the observed experimental results.