Christian Flindt

Electronic properties of graphene antidot lattices

Graphene antidot lattices constitute a novel class of nano-engineered graphene devices with controllable electronic and optical properties. An antidot lattice consists of a periodic array of holes that causes a band gap to open up around the Fermi level, turning graphene from a semimetal into a semiconductor. We calculate the electronic band structure of graphene antidot lattices using three numerical approaches with different levels of computational complexity, efficiency and accuracy. Fast finite-element solutions of the Dirac equation capture qualitative features of the band structure, while full tight-binding calculations and density functional theory (DFT) are necessary for more reliable predictions of the band structure. We compare the three computational approaches and investigate the role of hydrogen passivation within our DFT scheme.

Counting Statistics of Non-Markovian Quantum Stochastic Processes

We derive a general expression for the cumulant generating function (CGF) of non-Markovian quantum stochastic transport processes. The long-time limit of the CGF is determined by a single dominating pole of the resolvent of the memory kernel from which we extract the zero-frequency cumulants of the current using a recursive scheme. The finite-frequency noise is expressed not only in terms of the resolvent, but also initial system-environment correlations. As an illustrative example we consider electron transport through a dissipative double quantum dot for which we study the effects of dissipation on the zero-frequency cumulants of high orders and the finite-frequency noise.

Optical properties of graphene antidot lattices

Undoped graphene is semimetallic and thus not suitable for many electronic and optoelectronic applications requiring gapped semiconductor materials. However, a periodic array of holes (antidot lattice) renders graphene semiconducting with a controllable band gap. Using atomistic modeling, we demonstrate that this artificial nanomaterial is a dipole-allowed direct-gap semiconductor with a very pronounced optical-absorption edge. Hence, optical infrared spectroscopy should be an ideal probe of the electronic structure. To address realistic experimental situations, we include effects due to disorder and the presence of a substrate in the analysis.

Full counting statistics of nano-electromechanical systems

We develop a theory for the full counting statistics (FCS) for a class of nanoelectromechanical systems (NEMS), describable by a Markovian generalized master equation. The theory is applied to two specific examples of current interest: vibrating C60-molecules and quantum shuttles. We report a numerical evaluation of the first three cumulants for the C60 setup; for the quantum shuttle we use the third cumulant to substantiate that the giant enhancement in noise observed at the shuttling transition is due to a slow switching between two competing conduction channels. Especially the last example illustrates the power of the FCS.

Shot noise of a quantum shuttle

We formulate a theory for shot noise in quantum nanoelectromechanical systems. As a specific example, the theory is applied to a quantum shuttle, and the zero-frequency noise, measured by the Fano factor F, is computed. F reaches very low values (F approximately 10(-2)) in the shuttling regime even in the quantum limit, confirming that shuttling is universally a low noise phenomenon. In approaching the semiclassical limit, the Fano factor shows a giant enhancement (F approximately 10(2)) at the shuttling threshold, consistent with predictions based on phase-space representations of the density matrix.

Measurement of finite-frequency current statistics in a single-electron transistor

Electron transport in nanoscale structures is strongly influenced by the Coulomb interaction that gives rise to correlations in the stream of charges and leaves clear fingerprints in the fluctuations of the electrical current. A complete understanding of the underlying physical processes requires measurements of the electrical fluctuations on all time and frequency scales, but experiments have so far been restricted to fixed frequency ranges, as broadband detection of current fluctuations is an inherently difficult experimental procedure. Here we demonstrate that the electrical fluctuations in a single-electron transistor can be accurately measured on all relevant frequencies using a nearby quantum point contact for on-chip real-time detection of the current pulses in the single-electron device. We have directly measured the frequency-dependent current statistics and, hereby, fully characterized the fundamental tunnelling processes in the single-electron transistor. Our experiment paves the way for future investigations of interaction and coherence-induced correlation effects in quantum transport.

Counting statistics of transport through Coulomb blockade nanostructures: High-order cumulants and non-Markovian effects

Recent experimental progress has made it possible to detect in real-time single electrons tunneling through Coulomb blockade nanostructures, thereby allowing for precise measurements of the statistical distribution of the number of transferred charges, the so-called full counting statistics. These experimental advances call for a solid theoretical platform for equally accurate calculations of distribution functions and their cumulants. Here we develop a general framework for calculating zero-frequency current cumulants of arbitrary orders for transport through nanostructures with strong Coulomb interactions. Our recursive method can treat systems with many states as well as non-Markovian dynamics. We illustrate our approach with three examples of current experimental relevance: bunching transport through a two-level quantum dot, transport through a nano-electromechanical system with dynamical Franck-Condon blockade, and transport through coherently coupled quantum dots embedded in a dissipative environment. We discuss properties of high-order cumulants as well as possible subtleties associated with non-Markovian dynamics.

Current noise spectrum of a single-particle emitter: Theory and experiment

The controlled and accurate emission of coherent electronic wave packets is of prime importance for future applications of nano-scale electronics. Here we present a theoretical and experimental analysis of the finite-frequency noise spectrum of a periodically driven single electron emitter. The electron source consists of a mesoscopic capacitor that emits single electrons and holes into a chiral edge state of a quantum Hall sample. We compare experimental results with two complementary theoretical descriptions: On one hand, the Floquet scattering theory which leads to accurate numerical results for the noise spectrum under all relevant operating conditions. On the other hand, a semi-classical model which enables us to develop an analytic description of the main sources of noise when the emitter is operated under optimal conditions. We find excellent agreement between experiment and theory. Importantly, the noise spectrum provides us with an accurate description and characterization of the mesoscopic capacitor when operated as a periodic single electron emitter.

Spin-orbit mediated control of spin qubits.

We propose to use the spin-orbit interaction as a means to control electron spins in quantum dots, enabling both single-qubit and two-qubit operations. Very fast single-qubit operations may be achieved by temporarily displacing the electrons. For two-qubit operations the coupling mechanism is based on a combination of the spin-orbit coupling and the mutual long-ranged Coulomb interaction. Compared to existing schemes using the exchange coupling, the spin-orbit induced coupling is less sensitive to random electrical fluctuations in the electrodes defining the quantum dots.

Current noise in a vibrating quantum dot array

We develop methods for calculating the zero-frequency noise for quantum shuttles, i.e., nanoelectromechanical devices where the mechanical motion is quantized. As a model system we consider a three-dot array, where the internal electronic coherence both complicates and enriches the physics. Two different formulations are presented: (i) quantum regression theorem and (ii) the counting variable approach. It is demonstrated, both analytically and numerically, that the two formulations yield identical results, when the conditions of their respective applicability are fulfilled. We describe the results of extensive numerical calculations for current and current noise (Fano factor), based on a solution of a Markovian generalized master equation. The results for the current and noise are further analyzed in terms of Wigner functions, which help to distinguish different transport regimes (in particular, shuttling versus cotunneling). In the case of weak interdot coupling, the electron transport proceeds via sequential tunneling between neighboring dots. A simple rate equation with the rates calculated analytically from the