Christian Hepp

One- and two-dimensional photonic crystal microcavities in single crystal diamond

Diamond is an attractive material for photonic quantum technologies because its colour centres have a number of outstanding properties, including bright single photon emission and long spin coherence times. To take advantage of these properties it is favourable to directly fabricate optical microcavities in high-quality diamond samples. Such microcavities could be used to control the photons emitted by the colour centres or to couple widely separated spins. Here, we present a method for the fabrication of one- and two-dimensional photonic crystal microcavities with quality factors of up to 700 in single crystal diamond. Using a post-processing etching technique, we tune the cavity modes into resonance with the zero phonon line of an ensemble of silicon-vacancy colour centres, and we measure an intensity enhancement factor of 2.8. The controlled coupling of colour centres to photonic crystal microcavities could pave the way to larger-scale photonic quantum devices based on single crystal diamond.

Electronic structure of the silicon vacancy color center in diamond

The negatively charged silicon vacancy (SiV) color center in diamond has recently proven its suitability for bright and stable single photon emission. However, its electronic structure so far has remained elusive. We here explore the electronic structure by exposing single SiV defects to a magnetic field where the Zeeman effect lifts the degeneracy of magnetic sublevels. The similar responses of single centers and a SiV ensemble in a low strain reference sample prove our ability to fabricate almost perfect single SiVs, revealing the true nature of the defects electronic properties. We model the electronic states using a group-theoretical approach yielding a good agreement with the experimental observations. Furthermore, the model correctly predicts polarization measurements on single SiV centers and explains recently discovered spin selective excitation of SiV defects.

Optical signatures of silicon-vacancy spins in diamond

Colour centres in diamond have emerged as versatile tools for solid-state quantum technologies ranging from quantum information to metrology, where the nitrogen-vacancy centre is the most studied to date. Recently, this toolbox has expanded to include novel colour centres to realize more efficient spin-photon quantum interfaces. Of these, the silicon-vacancy centre stands out with highly desirable photonic properties. The challenge for utilizing this centre is to realize the hitherto elusive optical access to its electronic spin. Here we report spin-tagged resonance fluorescence from the negatively charged silicon-vacancy centre. Our measurements reveal a spin-state purity approaching unity in the excited state, highlighting the potential of the centre as an efficient spin-photon quantum interface.

Narrowband fluorescent nanodiamonds produced from chemical vapor deposition films

We report on the production of nanodiamonds (NDs) with 70–80 nm size via bead assisted sonic disintegration (BASD) of a polycrystalline chemical vapor deposition film. The high crystalline quality NDs display intense narrowband (7 nm) room temperature luminescence at 738 nm from in situ incorporated silicon vacancy centers. We demonstrate bright, narrowband single photon emission with >100 000 cps. Due to the narrow fluorescence bandwidth as well as the near-infrared emission these NDs are also suitable as fluorescence labels with significantly enhanced performance for in vivo imaging.

Low-temperature investigations of single silicon vacancy colour centres in diamond

We study single silicon vacancy (SiV) centres in chemical vapour deposition (CVD) nanodiamonds on iridium as well as an ensemble of SiV centres in a high-quality, low-stress CVD diamond film by using temperature-dependent luminescence spectroscopy in the temperature range 5?295?K. We investigate in detail the temperature-dependent fine structure of the zero-phonon line (ZPL) of the SiV centres. The ZPL transition is affected by inhomogeneous as well as temperature-dependent homogeneous broadening and blue shifts by about 20?cm?1 upon cooling from room temperature to 5?K. We employ excitation power-dependent g(2) measurements to explore the temperature-dependent internal population dynamics of single SiV centres and infer mostly temperature-independent dynamics.

All-optical formation of coherent dark states of silicon-vacancy spins in diamond

Spin impurities in diamond can be versatile tools for a wide range of solid-state-based quantum technologies, but finding spin impurities that offer sufficient quality in both photonic and spin properties remains a challenge for this pursuit. The silicon-vacancy center has recently attracted much interest because of its spin-accessible optical transitions and the quality of its optical spectrum. Complementing these properties, spin coherence is essential for the suitability of this center as a spin-photon quantum interface. Here, we report all-optical generation of coherent superpositions of spin states in the ground state of a negatively charged silicon-vacancy center using coherent population trapping. Our measurements reveal a characteristic spin coherence time, T2*, exceeding 45 nanoseconds at 4 K. We further investigate the role of phonon-mediated coupling between orbital states as a source of irreversible decoherence. Our results indicate the feasibility of all-optical coherent control of silicon-vacancy spins using ultrafast laser pulses.

Evaluation of nitrogen- and silicon-vacancy defect centres as single photon sources in quantum key distribution

We demonstrate a quantum key distribution (QKD) testbed for room temperature single photon sources based on defect centres in diamond. A BB84 protocol over a short free-space transmission line is implemented. The performance of nitrogen-vacancy (NV) as well as silicon-vacancy defect (SiV) centres is evaluated. An extrapolation for the future applicability of such sources in quantum information processing is discussed.

Optical signatures of spin in silicon-vacancy centre in diamond

The spin state of the silicon-vacancy centre in diamond and its optical accessibility have so far remained elusive. We here evidence spin-tagged fluorescence through resonant optical access to the electronic spin ½ of the centre.

Quantum frequency conversion of visible single photons from a quantum dot to a telecom band

The work demonstrates frequency downconversion of single photons from a quantum dot and prove the preservation of the single photon character. The authors were able to translate the frequency of single photons of a semiconductor quantum dot from the red spectral range to the telecom O-band. It was proven that this conversion process leaves the quantum properties of the photons untouched. The high over-all efficiency of 32% for this conversion interface makes it well suited for an application in long-range quantum transmission links.

Photonic crystal microcavities in single crystal diamond for color center coupling

We fabricate photonic crystal microcavities in a single crystal diamond membrane and actively tune the cavity modes into resonance with the emission line of color centers in diamond to enhance the emission rate.