Christian Lauer

Advances in performance and beam quality of 9xx-nm laser diodes tailored for efficient fiber coupling

The impact of new direct-diode and fiber laser systems on industrial manufacturing drives the demand for highbrightness diode laser pump sources suitable for simple fiber coupling with high efficiency. Within the German funded project HEMILAS laser mini-bars with different bar geometries and small fill factors were investigated. We present results on 9xx nm bars with tailored beam parameter products for simplified coupling to fibers with core diameters of 200μm and 300μm with a numerical aperture of 0.22 and compare beam quality parameters, brightness, conversion efficiency, and thermal performance of different bar designs. Optimized epitaxy structures yield conversion efficiency maxima above 66%. The slow axis divergence angle of mini-bars with a fill factor of 10% featuring five 100μm wide and 4mm long emitters based on this epitaxy structure stays below 7°, which corresponds to a beam parameter product of 15mm mrad, up to very high output power of over 45W. This result was achieved for mounting on actively cooled submounts using hard solder. A similar bar with 5mm cavity length and using soft soldering reached an output power of 60W at the same beam parameter product. At 4mm cavity length, no COMD failures were observed up to currents exceeding the thermal rollover and the maximum output cw power was 95W.

Mode shaping in semiconductor broad area lasers by monolithically integrated phase structures

By broadening the stripe width of the active waveguide region, it is possible to extract high optical powers from semiconductor broad area lasers. However, a weak output beam quality, optical filamentation, and high peak power densities will result, which are invoked by the amplification of higher order modes. We show an approach to influence the optical field inside the resonator by integrating optical phase structures directly into the waveguide. Those elements offer the possibility to enlarge the active gain area for the desired fundamental laser mode, while additional diffraction losses for higher order modes are generated, thus achieving an improved beam quality. We report on considerations in designing those elements and demonstrate a first experimental realization.

Scaling brilliance of high power laser diodes

New direct diode laser systems and fiber lasers require brilliant fiber coupled laser diodes for efficient operation. In the German funded project HEMILAS different laser bar designs are investigated with tailored beam parameter products adapted for efficient fiber coupling. In this paper we demonstrate results on 9xx and 1020nm bars suitable for coupling into 200μm fibers. With special facet technology and optimised epitaxial structure COD-free laser bars were fabricated with maximum efficiency above 66%. For short bars consisting of five 100μm wide emitters 75W CW maximum output power was reached. In QCW-mode up to 140W are demonstrated. The 10% fill factor bars with 4mm cavity are mounted with hard solder. Lifetime tests in long pulse mode with 35W output power exceed 5000 hours of testing without degradation or spontaneous failures. Slow axis divergence stays below 7° up to power levels of 40W and is suitable for simple fiber coupling into 200μm NA 0.22 fibers with SAC and FAC lenses. For fiber coupling based on beam rearrangement with step mirrors, bars with higher fill factor of 50% were fabricated and tested. The 4mm cavity short bars reach efficiencies above 60%. Lifetime tests at accelerated powers were performed. Finally fiber coupling results with output powers of up to 2.4 kW and beam quality of 30 mm mrad are demonstrated.

Brilliant low fill factor diode laser bars at 9xx nm for fiber coupling

New semiconductor multi emitters combine the advantages of laser bars and strength of single emitters for fiber coupling applications. We introduce a new technology to drive the device at highest power density at the laser facet. The new technology enables us to reduce the fill factor while maintaining output power per laser bar at reliable and efficient operation. The overall output power and slow axis beam parameter product is scaled with the numbers of emitters and may be coupled into a single fiber with low effort in beam shaping or fiber combining. We demonstrate that multi emitters can operate at same power level as the same number of single emitters. In this paper we present data on highly efficient and reliable 9xx nm laser bars designed for a defined fiber diameter and numerical aperture. For comparison single emitters and short bars with different fill factors were investigated. Efficiencies above 60% were reached with 4mm cavity length and fast axis far field angles of 45° (95%). Stable operation at powers up to 70W from short bars with five 100μm wide emitters was reached. Slow axis divergence is below 7° up to power levels of 38W and is suitable for coupling into 200μm NA 0.22 fibers with only slow axis and fast axis collimation without beam rearrangement.

Progress in ultra-compact green frequency doubled optically pumped surface emitting lasers

Compact, stable and efficient green lasers are of great interest for many applications like mobile video projection, sensing, distance measurement and instrumentation. Those applications require medium values of output power in the 50mW range, good wall-plug efficiency above 5 % and stable operation over a wide temperature range. In this paper we present latest results from experimental investigations on ultra-compact green intracavity frequency doubled optically pumped semiconductor InGaAs disk lasers. The green laser setup has been limited to a few micro optical and semiconductor components built on a silicon backplane and fits within an envelope of less than 0.4 cc. An optical frequency looking scheme in order to fix the fundamental wavelength over varying operating conditions like changing output power and ambient temperature has been applied. The cavity has been optimized for fast modulation response and high efficiency using quasi-phase matching non-linear material. Recent data from cw and high-frequency characterization is presented.

Next generation 8xx nm laser bars and single emitters

Semiconductor lasers with emission in the range 790 - 880 nm are in use for a variety of application resulting in different laser designs to fulfill requirements in output power, operation temperature and lifetimes. The output power is limited by self heating and catastrophic optical mirror damage at the laser facet (COMD). Now we present data on bars fabricated with our new facet technology, which enables us to double the maximum facet load. We present q-cw laser bar with 80% fill factor with increased power level to 350W in long term operation at 200μs and 100Hz. The COMD limit of the bar is as high as 680W. Using Quantels optimized packaging stacks with 11 bars of 5mm widths are tested at up to 120A resulting over 66% power conversion efficiency at 1600W output power. Laser bars for continuous wave operation like 50% fill factor bars had an COMD limit of approx. 250W with conventional facet technology, the value is equivalent to 10W per 200μm emitter (conditions: 200μs). The new facet technology pushes the facet stability to 24W/emitter. The new process and an improved design enable us to shift continuous wave operation at 808nm from 100W to 150W/bar with lifetimes of several thousand hours at 30°C using DILAS mounting technology. Higher power is possible depending on lifetime requirements. The power conversion efficiency of the improved devices is as high as 62% at 200W cw. The next limitation of 8xxnm lasers is high temperature operation: Values of 60-80°C are common for consumer applications of single emitters. Therefore Osram developed a new epitaxial design which reduced the generation of bulk defects. The corresponding Osram single emitters operate at junction temperatures up to 95°C, a value which corresponds to 80°C heat sink temperature for lasers soldered on C-mount or 65°C case temperature for lasers mounted in TO can. Current densities of the single emitter broad area lasers are as high as 1.4kA/cm2 at 850nm emission wavelength.

High-performance at low cost: the challenge manufacturing frequency doubled green semiconductor lasers for mass markets

Laser projection arising as a new application in the consumer market has been the driving force for OSRAM Opto Semiconductors to develop a frequency doubled semiconductor laser and the production technology necessary to make the complexity of an advanced laser system affordable. Optically pumped frequency doubled semiconductor lasers provide an ideal platform to serve the laser projection application. Based on this scalable technology, we developed a 50 mW green laser comprising all the properties that can be expected from a high performance laser: Excellent beam quality and low noise, high speed modulation, good efficiency and long life time. More than that, the package is very compact (<0.4 cm3) and may be operated passively cooled at up to 60°C. Managing lasing wavelength and controlling phase matching conditions have been major design considerations. We will describe the key characteristics of the green laser, and will also present results from reliability testing and production monitoring.

Recent brightness improvements of 976 nm high power laser bars

Pump modules for fiber lasers and fiber-coupled direct diode laser systems require laser diodes with a high beam quality. While in fast axis direction diode lasers exhibit a nearly diffraction limited output beam, the maximum usable output power is usually limited by the slow axis divergence blooming at high power levels. Measures to improve the lateral beam quality are subject of extensive research. Among the many influencing factors are the chip temperature, thermal crosstalk between emitters, thermal lensing, lateral waveguiding and lateral mode structure. We present results on the improvements of the lateral beam divergence and brightness of gain-guided mini-bars for emission at 976 nm. For efficient fiber coupling into a 200 μm fiber with NA 0.22, the upper limit of the lateral beam parameter product is 15.5 mm mrad. Within the last years, the power level at this beam quality has been improved from 44 W to 52 W for the chips in production, enabling more cost efficient pump modules and laser systems. Our work towards further improvements of the beam quality focuses on advanced chip designs featuring reduced thermal lensing and mode shaping. Recent R&D results will be presented, showing a further improvement of the beam quality by 15%. Also, results of a chip design with an improved lateral emitter design for highest brightness levels will be shown, yielding in a record high brightness saturation of 4.8 W/mm mrad.

Transient surface modifications during singular heating events at diode laser facets

Surface morphology changes and transient reflectance changes at diode laser facets are monitored during the catastrophic optical damage (COD) process in a single pulse operation. Time-resolved micro-reflectance spectroscopy with a streak-camera (time resolution ~20 ns) allows us to observe the creation sequence of up to four distinct degradation seed points at a device facet within <300 ns. The shape of the COD seeds is created within <30–40 ns. Creation of non-planar facet areas by local melting represents the main mechanism behind the observed reflectivity changes. Subsequently the surface temperature decreases within the pulse which caused the COD.

Tailored bars at 976 nm for high-brightness fiber-coupled modules

In 2007, DILAS proposed the approach to tailor the output beam characteristics of laser diodes to match the required beam quality of a desired target fiber, thus, drastically simplifying the coupling optics to basically only fast and slow axis collimation lenses. Over the last years, we developed and improved this tailored bar (T-Bar) concept together with the tooling for fully automated mass production of fiber-coupled T-Bar modules for fiber laser pumping as well as for direct applications. We present results on the improvement of T-Bars tailored for optimized coupling into fibers with a diameter of 200 μm with NA 0.22 corresponding to a beam parameter product of 22 mm·mrad. Cost efficient coupling to this fiber requires a tailored beam parameter product smaller than 15.5 mm·mrad in slow axis direction corresponding to a slow axis beam divergence of 7° (full angle, 95% power content) for five 100 μm wide emitters. The improved T-Bars fulfil this requirement up to an output power of 52 W with a brightness of 3.1 W/mm·mrad and a power conversion efficiency achieving 69%. This progress in the T-Bar performance together with modifications in the module design led to the increase of the reliable output power from 135 W in 2009 to 360 W in 2017 for a T-Bar module with one baseplate. We will also give a review of the main development steps and further R and D improvements.