Christian Poivey

Current single event effects and radiation damage results for candidate spacecraft electronics

We present data on the vulnerability of a variety of candidate spacecraft electronics to proton and heavy ion induced single event effects, proton-induced damage, and total ionizing dose. Devices tested include optoelectronics, digital, analog, linear bipolar, hybrid devices, analog-to-digital converters (ADCs), digital-to-analog converters (DACs), and DC-DC converters, among others.

Circuit modeling of the LM124 operational amplifier for analog single-event transient analysis

This work presents the development of a transistor-level circuit model of the LM124 operational amplifier specifically engineered and calibrated for analog single-event transient (ASET) computer simulations. The techniques presented rely heavily on datasheet specifications for electrical parameterization and experimental laser probing for dc and transient calibration. The resulting circuit model proves to be suitable for broad-beam SET predictions and fault diagnostics for space applications.

From the Reference SEU Monitor to the Technology Demonstration Module On-Board PROBA-II

The reference SEU Monitor system designed and presented in 2005 (R. H. SOslashrensen, F.-X. Guerre, and A. Roseng ldquoDesign, testing and calibration of a reference SEU monitor system,rdquo in Proc. RADECS, 2005, pp. B3-1-B3-7) has now been used by many researchers at many radiation test sites and has provided valuable calibration data in support of numerous projects. As some of these findings and results give new insight into improved inter-facility calibrations and provide additional inputs into ongoing SEE research, a few of the more interesting cases are presented. Furthermore the dasiadetector elementpsila, the Atmel AT60142F SRAM, now in a hybrid configuration, will form the key detector element in the Technology Demonstration Module (TDM) to be flown on-board the PROBA-II satellite, to be launched at the beginning of 2009. This flight opportunity extends the Reference SEU Database with both ground and space data, taken on the same device under identical operating conditions. Additionally, the Reference SEU Monitor concept is employed as the basis for the new Reference SEL Monitor system, currently under characterization and preparation for integration on the TDM. Ground SEU/SEL characterization of this latch-up experiment is also presented as well as the basic concept of the TDM, the PROBA-II Radiation Monitor module.

Comparison of single-event transients induced in an operational amplifier (LM124) by pulsed laser light and a broad beam of heavy ions

A comparison of single-event transients (SETs) from heavy-ion and pulsed-laser irradiation of the LM124 operational amplifier shows good agreement for different voltage configurations. The agreement is illustrated by comparing both individual transient shapes and plots of transient amplitude versus width.

Pulsed-laser testing methodology for single event transients in linear devices

A methodology for testing linear devices for single event transients that uses a pulsed laser to supplement a heavy-ion accelerator is proposed. The method is based on an analysis of plots of transient amplitudes versus width over a range of laser pulse input energies and heavy-ion LETs. Additional data illustrating the method are presented that include the dependence of SETs on circuit configuration in a comparator (LM111) and operational amplifier (LM124). If judiciously used, the methodology has the advantage that the amount of heavy-ion accelerator testing can be reduced.

The Technology Demonstration Module On-Board PROBA-II

As a semiconductor component radiation effects and technology demonstration experiment, the Technology Demonstration Module (TDM) integrated into the PROBA-II satellite, was launched on November 2nd 2009, into a 800 km polar orbit. This SEU/SEL experiment, in strong support to the Reference SEU Monitor database , will be described and details given about ground testing and calibrations. Since ground testing was carried out on flight lot devices and under flight operational conditions, the in-orbit SEU/SEL database will eventually become a vital reference point for improved modeling, prediction and testing. Evidence to confirm this promise is starting to emerge and will be presented at the end of the paper. As the present in-orbit number of events is still small, only the first month of flight performance will be presented with strong emphasis on validating correct operation of monitored devices.

Assessing the impact of the space radiation environment on parametric degradation and single-event transients in optocouplers

Assessing the risk of using optocouplers in satellite applications offers challenges that incorporate those of commercial off-the-shelf devices compounded by hybrid module construction techniques. We discuss approaches for estimating this risk. In the process, we benchmark our estimates for proton and heavy-ion induced single-event transient rate estimates with recent flight data from the Terra mission. For parametric degradation, we discuss a method for acquiring test data and mapping it into an estimation approach that captures all the important variables of circuit application, environment, damage energy dependence, complex response to total ionizing dose and displacement effects, temperature, and annealing.

Effects of Ion Species on SEB Failure Voltage of Power DMOSFET

This paper presents and explains test results showing the effect of ion species on the single event burnout (SEB) failure voltage using a SEB sensitive engineering power double diffused metal oxide silicon field effect transistor (DMOSFET). The analyses show the determining factor of tested SEB failure voltage is the ion species itself rather than test or beam conditions such as initial beam energy, surface linear energy transfer (LET), ion range, or ionized charge. Also, results from five test facilities and five test setups are compared to determine if there will be differences in test results when different test setups or different heavy ion accelerator facilities were used.

SEU Measurements and Simulations in a Mixed Field Environment

Single Event Upset (SEU) measurements were performed using the European Space Agencys (ESA) Standard SEU Monitor in the H4 Irradiation mixed-field test area at CERN. The results, tightly correlated with the radiation environment, are compared with those obtained with the CERN Radiation Monitors (RadMons) as well as with the Monte Carlo simulation of the experimental setup using the FLUKA Monte Carlo transport code. In addition, the SEU cross section of the device for particles and energies not available in standard testing (such as charged pions or GeV-energy hadrons) are simulated and discussed, showing an increase of over a factor 2 for nucleons in the 200 MeV-3 GeV range. A monoenergetic SEU cross section measurement at 120 GeV is included in the analysis.

Experimental Validation of Fault Injection Analyses by the FLIPPER Tool

The paper discusses the experimental validation of fault injection analyses performed with the FLIPPER tool. Failure probabilities obtained by fault injection were compared against failure probabilities obtained at accelerated proton testing of a benchmark design provided by the European Space Agency.