Christoph Renner

Scanning tunneling spectroscopy of high-temperature superconductors

Tunneling spectroscopy has played a central role in the experimental verification of the microscopic theory of superconductivity in classical superconductors. Initial attempts to apply the same approach to high-temperature superconductors were hampered by various problems related to the complexity of these materials. The use of scanning tunneling microscopy and spectroscopy (STM and STS) on these compounds allowed the main difficulties to be overcome. This success motivated a rapidly growing scientific community to apply this technique to high-temperature superconductors. This paper reviews the experimental highlights obtained over the last decade. The crucial efforts to gain control over the technique and to obtain reproducible results are first recalled. Then a discussion on how the STM and STS techniques have contributed to the study of some of the most unusual and remarkable properties of high-temperature superconductors is presented: the unusually large gap values and the absence of scaling with the critical temperature, the pseudogap and its relation to superconductivity, the unprecedented small size of the vortex cores and its influence on vortex matter, the unexpected electronic properties of the vortex cores, and the combination of atomic resolution and spectroscopy leading to the observation of periodic local density of states modulations in the superconducting and pseudogap states and in the vortex cores.

How to quantify deterministic and random influences on the statistics of the foreign exchange market

It is shown that price changes of the U.S. dollar-German mark exchange rates upon different delay times can be regarded as a stochastic Marcovian process. Furthermore, we show how Kramers-Moyal coefficients can be estimated from the empirical data. Finally, we present an explicit Fokker-Planck equation which models very precisely the empirical probability distributions, in particular, their non-Gaussian heavy tails.

Giant Piezoresistance Effects in Silicon Nanowires and Microwires

The giant piezoresistance (PZR) previously reported in silicon nanowires is experimentally investigated in a large number of depleted silicon nano- and microstructures. The resistance is shown to vary strongly with time due to electron and hole trapping at the sample surfaces independent of the applied stress. Importantly, this time-varying resistance manifests itself as an apparent giant PZR identical to that reported elsewhere. By modulating the applied stress in time, the true PZR of the structures is found to be comparable with that of bulk silicon.

Molecular Thin Films: A New Type of Magnetic Switch

The magnetic coupling of flexible metal phthalocyanine (MPc) thin films can be modified depending on the polymorphic form adopted by the crystals. A simple annealing procedure can switch the couplings from antiferromagnetic to ferromagnetic (MnPc) or paramagnetic (CuPc), opening up avenues for spintronic applications. Density functional and perturbation theories rationalize these trends and attribute the coupling mechanism to indirect exchange.

Surface transport and band gap structure of exfoliated 2H-MoTe2 crystals

Semiconducting transition metal dichalcogenides (TMDs) have emerged as materials that can be used to realize two-dimensional (2D) crystals possessing rather unique transport and optical properties. Most research has so far focused on sulfur and selenium compounds, while tellurium-based materials have attracted little attention so far. As a first step in the investigation of Te-based semiconducting TMDs in this context, we have studied MoTe2 crystals with thicknesses above 4 nm, focusing on surface transport and a quantitative determination of the gap structure. Using ionic-liquid gated transistors, we show that ambipolar transport at the surface of the material is reproducibly achieved, with hole and electron mobility values between 10 and 30 cm2 V−1s−1 at room temperature. The gap structure is determined through three different techniques: ionic-liquid gated transistors and scanning tunneling spectroscopy, which allow the measurement of the indirect gap (Eind), and optical transmission spectroscopy on crystals of different thickness, which enables the determination of both the direct (Edir) and the indirect gap. We find that at room temperature Eind = 0.88 eV and Edir = 1.02 eV. Our results suggest that thin MoTe2 layers may exhibit a transition to a direct gap before mono-layer thickness. They should also drastically extend the range of direct gaps accessible in 2D semiconducting TMDs.

Imaging oxygen defects and their motion at a manganite surface

Manganites are technologically important materials, used widely as solid oxide fuel cell cathodes; they have also been shown to exhibit electroresistance. Oxygen bulk diffusion and surface exchange processes are critical for catalytic action, and numerous studies of manganites have linked electroresistance to electrochemical oxygen migration. Direct imaging of individual oxygen defects is needed to underpin understanding of these important processes. Currently, it is not possible to collect the required images in bulk, but scanning tunnelling microscopy (STM) could provide such data for surfaces. Here, we report the first atomic resolution images of oxygen defects at a manganite surface. Our experiments also reveal defect dynamics, including oxygen adatom migration, vacancy-adatom recombination and adatom bistability. Beyond providing an experimental basis for testing models describing the microscopics of oxygen migration at transition-metal oxide interfaces, our work resolves the long-standing puzzle of why STM is more challenging for layered manganites than for cuprates.

Giant Room-Temperature Piezoresistance in a Metal-Silicon Hybrid Structure

Metal-semiconductor hybrids are artificially created structures presenting novel properties not exhibited by either of the component materials alone. Here we present a giant piezoresistance effect in a hybrid formed from silicon and aluminum. The maximum piezoresistive gage factor of 843, measured at room temperature, compares with a gage factor of -93 measured in the bulk homogeneous silicon. This piezoresistance boost is not due to the silicon-aluminum interface, but results from a stress induced anisotropy in the silicon conductivity that acts to switch current away from the highly conductive aluminum for uniaxial tensile strains. Its magnitude is shown, via the calculation of hybrid resistivity weighting functions, to depend only on the geometrical arrangement of the component parts of the hybrid.

Quantitative Analysis of Scanning Tunneling Microscopy Images of Mixed-Ligand-Functionalized Nanoparticles

Ligand-protected gold nanoparticles exhibit large local curvatures, features rapidly varying over small scales, and chemical heterogeneity. Their imaging by scanning tunneling microscopy (STM) can, in principle, provide direct information on the architecture of their ligand shell, yet STM images require laborious analysis and are challenging to interpret. Here, we report a straightforward, robust, and rigorous method for the quantitative analysis of the multiscale features contained in STM images of samples consisting of functionalized Au nanoparticles deposited onto Au/mica. The method relies on the analysis of the topographical power spectral density (PSD) and allows us to extract the characteristic length scales of the features exhibited by nanoparticles in STM images. For the mixed-ligand-protected Au nanoparticles analyzed here, the characteristic length scale is 1.2 ± 0.1 nm, whereas for the homoligand Au NPs this scale is 0.75 ± 0.05 nm. These length scales represent spatial correlations independent of scanning parameters, and hence the features in the PSD can be ascribed to a fingerprint of the STM contrast of ligand-protected nanoparticles. PSD spectra from images recorded at different laboratories using different microscopes and operators can be overlapped across most of the frequency range, proving that the features in the STM images of nanoparticles can be compared and reproduced.

Piezoresistance in silicon at uniaxial compressive stresses up to 3 GPa.

The room-temperature longitudinal piezoresistance of n-type and p-type crystalline silicon along selected crystal axes is investigated under uniaxial compressive stresses up to 3 GPa. While the conductance (G) of n-type silicon eventually saturates at ≈ 45% of its zero-stress value (G(0)) in accordance with the charge transfer model, in p-type material G/G(0) increases above a predicted limit of ≈ 4.5 without any significant saturation, even at 3 GPa. Calculation of G/G(0) using ab initio density functional theory reveals that neither G nor the mobility, when properly averaged over the hole distribution, saturate at stresses lower than 3 GPa. The lack of saturation has important consequences for strained-silicon technologies.

Doping nature of native defects in 1T-TiSe2.

The transition-metal dichalcogenide 1T-TiSe2 is a quasi-two-dimensional layered material with a charge density wave (CDW) transition temperature of T(CDW) ≈ 200 K. Self-doping effects for crystals grown at different temperatures introduce structural defects, modify the temperature-dependent resistivity, and strongly perturbate the CDW phase. Here, we study the structural and doping nature of such native defects combining scanning tunneling microscopy or spectroscopy and ab initio calculations. The dominant native single atom dopants we identify in our single crystals are intercalated Ti atoms, Se vacancies, and Se substitutions by residual iodine and oxygen.