Christophe Peucheret

Strained silicon as a new electro-optic material.

For decades, silicon has been the material of choice for mass fabrication of electronics. This is in contrast to photonics, where passive optical components in silicon have only recently been realized. The slow progress within silicon optoelectronics, where electronic and optical functionalities can be integrated into monolithic components based on the versatile silicon platform, is due to the limited active optical properties of silicon. Recently, however, a continuous-wave Raman silicon laser was demonstrated; if an effective modulator could also be realized in silicon, data processing and transmission could potentially be performed by all-silicon electronic and optical components. Here we have discovered that a significant linear electro-optic effect is induced in silicon by breaking the crystal symmetry. The symmetry is broken by depositing a straining layer on top of a silicon waveguide, and the induced nonlinear coefficient, χ(2) ≈ 15 pm V-1, makes it possible to realize a silicon electro-optic modulator. The strain-induced linear electro-optic effect may be used to remove a bottleneck in modern computers by replacing the electronic bus with a much faster optical alternative.

On-chip two-mode division multiplexing using tapered directional coupler-based mode multiplexer and demultiplexer

We demonstrate a novel on-chip two-mode division multiplexing circuit using a tapered directional coupler-based TE(0)&TE(1) mode multiplexer and demultiplexer on the silicon-on-insulator platform. A low insertion loss (0.3 dB), low mode crosstalk (< -16 dB), wide bandwidth (~100 nm), and large fabrication tolerance (20 nm) are measured. An on-chip mode multiplexing experiment is carried out on the fabricated circuit with non return-to-zero (NRZ) on-off keying (OOK) signals at 40 Gbit/s. The experimental results show clear eye diagrams and moderate power penalty for both TE(0) and TE(1) modes.

Demonstration of 5.1 Tbit/s data capacity on a single-wavelength channel.

We have generated a single-wavelength data signal with a data capacity of 5.1 Tbit/s. The enabling techniques to generate the data signal are optical time-division multiplexing up to a symbol rate of 1.28 Tbaud, differential quadrature phase shift keying as data format, and polarisation-multiplexing. For the first time, error-free performance with a bit error rate less than 10(-9) is demonstrated for the 5.1 Tbit/s data signal. This is achieved in a back-to-back configuration using a direct detection receiver based on polarisation- and time-demultiplexing, delay-demodulation and balanced photo-detection.

Ultrahigh-efficiency apodized grating coupler using fully etched photonic crystals

We present an efficient method to design apodized grating couplers with Gaussian output profiles for efficient coupling between standard single mode fibers and silicon chips. An apodized grating coupler using fully etched photonic crystal holes on the silicon-on-insulator platform is designed, and fabricated in a single step of lithography and etching. An ultralow coupling loss of -1.74 dB (67% coupling efficiency) with a 3 dB bandwidth of 60 nm is experimentally measured.

Transmission and transparent wavelength conversion of an optically labeled signal using ASK/DPSK orthogonal modulation

We report an experimental investigation of transmission and transparent wavelength conversion properties of a two-level optically labeled signal using amplitude-shift-keying/differential-phase-shift-keying orthogonal modulation. Error-free transmission of a 10-Gb/s payload and 2.5-Gb/s label over 80-km nonzero dispersion-shifted fiber is achieved with less than 1-dB power penalty. Transparent wavelength label swapping based on four-wave mixing in a highly nonlinear fiber is also demonstrated, clearly validating this orthogonal modulation scheme as a potential solution for optical labeling.

STOLAS: switching technologies for optically labeled signals

GMPLS-based labeled optical burst switching (LOBS) networks are being considered as the next-generation optical Internet. GMPLS includes wavelength switching next to label and fiber (space) switching. We present a new concept of optically labeling bursts of packets suitable for LOBS networks supported by GMPLS. It is based on angle modulation, which enables control information to modulate the phase or frequency of the optical carrier, while payload data are transmitted via intensity modulation (IM). In particular, the optical label is orthogonally modulated, with respect to the payload, using either frequency shift keying or differential phase shift keying. We present a performance analysis of the modulation schemes by means of simulations where the influence of the payload IM extinction ratio and laser linewidth are investigated. In addition, the transmission performance of an IM/FSK combined modulated signal is experimentally validated at 10 Gb/s, demonstrating at the same time an FSK label swapping operation. Finally, a suitable optical label-controlled switch design is proposed that takes advantage of these novel labeling techniques, and efficiently combines widely tunable, fast switching lasers and SOA-MZI wavelength converters with an arrayed waveguide grating router.

Fully etched apodized grating coupler on the SOI platform with −0.58 dB coupling efficiency

We design and fabricate an ultrahigh coupling efficiency (CE) fully etched apodized grating coupler on the silicon-on-insulator (SOI) platform using subwavelength photonic crystals and bonded aluminum mirror. Fabrication error sensitivity and coupling angle dependence are experimentally investigated. A record ultrahigh CE of -0.58 dB with a 3 dB bandwidth of 71 nm and low back reflection are demonstrated.

Wavelength conversion of a 40-Gb/s RZ-DPSK signal using four-wave mixing in a dispersion-flattened highly nonlinear photonic crystal fiber

Wavelength conversion of a 40-Gb/s return-to-zero differential phase-shift keying signal is demonstrated in a highly nonlinear photonic crystal fiber (HNL-PCF) for the first time. A conversion efficiency of -20 dB for a pump power of 23 dBm and a conversion bandwidth of 31 nm, essentially limited by the gain bandwidth of erbium-doped fiber amplifiers, are obtained in only 50-m dispersion-flattened HNL-PCF with nonlinear coefficient equal to 11 W/sup -1//spl middot/km/sup -1/. This experiment demonstrates the potential of four-wave mixing in HNL-PCF as a modulation format and bit rate transparent wavelength conversion mechanism in future high-speed systems.

Ultra-high-speed wavelength conversion in a silicon photonic chip

We have successfully demonstrated all-optical wavelength conversion of a 640-Gbit/s line-rate return-to-zero differential phase-shift keying (RZ-DPSK) signal based on low-power four wave mixing (FWM) in a silicon photonic chip with a switching energy of only ~110 fJ/bit. The waveguide dispersion of the silicon nanowire is nano-engineered to optimize phase matching for FWM and the switching power used for the signal processing is low enough to reduce nonlinear absorption from two-photon-absorption (TPA). These results demonstrate that high-speed wavelength conversion is achievable in silicon chips with high data integrity and indicate that high-speed operation can be obtained at moderate power levels where nonlinear absorption due to TPA and free-carrier absorption (FCA) is not detrimental. This demonstration can potentially enable high-speed optical networks on a silicon photonic chip.

Direct experimental and numerical determination of extremely high group indices in photonic crystal waveguides.

We report on time-of-flight experimental measurements and numerical calculations of the group-index dispersion in a photonic crystal waveguide realized in silicon-on-insulator material. Experimentally group indices higher than 230 has been observed. Numerical 2D and 3D time-domain simulations show excellent agreement with the measured data.