Christopher J. Bebek

Overview of the SuperNova/Acceleration probe (SNAP)

The SuperNova / Acceleration Probe (SNAP) is a space-based experiment to measure the expansion history of the Universe and study both its dark energy and the dark matter. The experiment is motivated by the startling discovery that the expansion of the Universe is accelerating. A 0.7 square-degree imager comprised of 36 large format fully-depleted n-type CCDs sharing a focal plane with 36 HgCdTe detectors forms the heart of SNAP, allowing discovery and lightcurve measurements simultaneously for many supernovae. The imager and a high-efficiency low-resolution integral field spectrograph are coupled to a 2-m three mirror anastigmat wide-field telescope, which will be placed in a high-earth orbit. The SNAP mission can obtain high-signal-to-noise calibrated light-curves and spectra for over 2000 Type Ia supernovae at redshifts between z=0.1 and 1.7. The resulting data set can not only determine the amount of dark energy with high precision, but test the nature of the dark energy by examining its equation of state. In particular, dark energy due to a cosmological constant can be differentiated from alternatives such asquintessence, by measuring the dark energys equation of state to an accuracy of +/-0.05, and by studying its time dependence.The SuperNova / Acceleration Probe (SNAP) is a space-based experiment to measure the expansion history of the Universe and study both its dark energy and the dark matter. The experiment is motivated by the startling discovery that the expansion of the Universe is accelerating. A 0.7~square-degree imager comprised of 36 large format fully-depleted n-type CCDs sharing a focal plane with 36 HgCdTe detectors forms the heart of SNAP, allowing discovery and lightcurve measurements simultaneously for many supernovae. The imager and a high-efficiency low-resolution integral field spectrograph are coupled to a 2-m three mirror anastigmat wide-field telescope, which will be placed in a high-earth orbit. The SNAP mission can obtain high-signal-to-noise calibrated light-curves and spectra for over 2000 Type Ia supernovae at redshifts between z = 0.1 and 1.7. The resulting data set can not only determine the amount of dark energy with high precision, but test the nature of the dark energy by examining its equation of state. In particular, dark energy due to a cosmological constant can be differentiated from alternatives such as quintessence, by measuring the dark energys equation of state to an accuracy of ± 0.05, and by studying its time dependence.

Measurement of lateral charge diffusion in thick, fully depleted, back-illuminated CCDs

Lateral charge diffusion in back-illuminated CCDs directly affects the point spread function (PSF) and spatial resolution of an imaging device. This can be of particular concern in thick, back-illuminated CCDs. We describe a technique of measuring this diffusion and present PSF measurements for an 800/spl times/1100, 15 /spl mu/m pixel, 280 /spl mu/m thick, back-illuminated, p-channel CCD that can be over-depleted. The PSF is measured over a wavelength range of 450 nm to 650 nm and at substrate bias voltages between 6 V and 80 V.

Proton radiation damage in high-resistivity n-type silicon CCDs

A new type of p-channel CCD constructed on high-resistivity n-type silicon was exposed to 12 MeV protons at doses up to 1 X 1011 protons/cm2. The charge transfer efficiency was measured as a function of radiation dose and temperature. We previously reported that these CCDs are significantly more tolerant to radiation damage than conventional n-channel devices. In the work reported here, we used pocket pumping techniques and charge transfer efficiency measurements to determine the identity and concentrations of radiation induced traps present in the damaged devices.

Charge trap identification for proton-irradiated p+ channel CCDs

Charge trapping in bulk silicon lattice structures is a source of charge transfer inefficiency (CTI) in CCDs. These traps can be introduced into the lattice by low-energy proton radiation in the space environment, decreasing the performance of the CCD detectors over time. Detailed knowledge of the inherent trap properties, including energy level and cross section, is important for understanding the impact of the defects on charge transfer as a function of operating parameters such as temperature and clocking speeds. This understanding is also important for mitigation of charge transfer inefficiency through annealing, software correction, or improved device fabrication techniques. In this paper, we measure the bulk trap properties created by 12.5 MeV proton irradiation on p+ channel, full-depletion CCDs developed at LBNL. Using the pocket pumping technique, we identify the majority trap populations responsible for CTI in both the parallel and serial transfer processes. We find the dominant parallel transfer trap properties are well described by the silicon lattice divacancy trap, in agreement with other studies. While the properties of the defects responsible for CTI in the serial transfer are more difficult to measure, we conclude that divacancy-oxygen defect centers would be efficient at our serial clocking rate and exhibit properties consistent with our serial pocket pumping data.

The Zwicky transient facility observing system

The Zwicky Transient Facility (ZTF) is a synoptic optical survey for high-cadence time-domain astronomy. Building upon the experience and infrastructure of the highly successful Palomar Transient Factory (PTF) team, ZTF will survey more than an order of magnitude faster than PTF in sky area and volume in order to identify rare, rapidly varying optical sources. These sources will include a trove of supernovae, exotic explosive transients, unusual stellar variables, compact binaries, active galactic nuclei, and asteroids. The single-visit depth of 20.4 mag is well matched to spectroscopic follow-up observations, while the co-added images will provide wide sky coverage 1.5 – 2 mag deeper than SDSS. The ZTF survey will cover the entire Northern Sky and revisit fields on timescales of a few hours, providing hundreds of visits per field each year, an unprecedented cadence, as required to detect fast transients and variability. This high-cadence survey is enabled by an observing system based on a new camera having 47 deg2 field of view – a factor of 6.5 greater than the existing PTF camera - equipped with fast readout electronics, a large, fast exposure shutter, faster telescope and dome drives, and various measures to optimize delivered image quality. Our project has already received an initial procurement of e2v wafer-scale CCDs and we are currently fabricating the camera cryostat. International partners and the NSF committed funds in June 2014 so construction can proceed as planned to commence engineering commissioning in 2016 and begin operations in 2017. Public release will allow broad utilization of these data by the US astronomical community. ZTF will also promote the development of transient and variable science methods in preparation for the seminal first light of LSST.

Device Design for a 12.3-Megapixel, Fully Depleted, Back-Illuminated, High-Voltage Compatible Charge-Coupled Device

A 12.3-megapixel charge-coupled device (CCD) that can be operated at high substrate-bias voltages has been developed in support of a proposal to study dark energy. The pixel size is 10.5 mum, and the format is 3512 rows by 3508 columns. The CCD is nominally 200 mum thick and is fabricated on high-resistivity n-type silicon that allows for fully depleted operation with the application of a substrate-bias voltage. The CCD is required to have high quantum efficiency (QE) at near-infrared wavelengths, low noise and dark current, and an rms spatial resolution of less than 4 mum. In order to optimize the spatial resolution and QE, requirements that have conflicting dependences on the substrate thickness, it is necessary to operate the CCD at large substrate-bias voltages. In this paper, we describe the features of the CCD, summarize the performance, and discuss in detail the device-design techniques used to realize 200-mum-thick CCDs that can be operated at substrate-bias voltages in excess of 100 V.

Development of fully depleted back-illuminated charge-coupled devices

The status of CCD development efforts at Lawrence Berkeley National Laboratory is reviewed. Fabrication technologies for the production of back-illuminated, fully depleted CCDs on 150 mm diameter wafers are described. In addition, preliminary performance results for high-voltage compatible CCDs, including a 3512 x 3512, 10.5 μm pixel CCD for the proposed SuperNova Acceleration Probe project, are presented.

Near infrared detectors for SNAP

Large format (1k × 1k and 2k × 2k) near infrared detectors manufactured by Rockwell Scientific Center and Raytheon Vision Systems are characterized as part of the near infrared R&D effort for SNAP (the Super-Nova/Acceleration Probe). These are hybridized HgCdTe focal plane arrays with a sharp high wavelength cut-off at 1.7 μm. This cut-off provides a sufficiently deep reach in redshift while it allows at the same time low dark current operation of the passively cooled detectors at 140 K. Here the baseline SNAP near infrared system is briefly described and the science driven requirements for the near infrared detectors are summarized. A few results obtained during the testing of engineering grade near infrared devices procured for the SNAP project are highlighted. In particular some recent measurements that target correlated noise between adjacent detector pixels due to capacitive coupling and the response uniformity within individual detector pixels are discussed.

High-voltage-compatable, fully depleted CCDs

We describe charge-coupled device (CCD) development activities at the Lawrence Berkeley National Laboratory (LBNL). Back-illuminated CCDs fabricated on 200-300 μm thick, fully depleted, high-resistivity silicon substrates are produced in partnership with a commercial CCD foundry. The CCDs are fully depleted by the application of a substrate bias voltage. Spatial resolution considerations require operation of thick, fully depleted CCDs at high substrate bias voltages. We have developed CCDs that are compatible with substrate bias voltages of at least 200V. This improves spatial resolution for a given thickness, and allows for full depletion of thicker CCDs than previously considered. We have demonstrated full depletion of 650-675 μm thick CCDs, with potential applications in direct x-ray detection. In this work we discuss the issues related to high-voltage operation of fully depleted CCDs, as well as experimental results on high-voltage-compatible CCDs.

Weak lensing from space I: instrumentation and survey strategy

A wide-field space-based imaging telescope is necessary to fully exploit the technique of observing dark matter via weak gravitational lensing. This first paper in a three part series outlines the survey strategies and relevant instrumental parameters for such a mission. As a concrete example of hardware design, we consider the proposed Supernova/Acceleration Probe (SNAP). Using SNAP engineering models, we quantify the major contributions to this telescopes point spread function (PSF). These PSF contributions are relevant to any similar wide-field space telescope. We further show that the PSF of SNAP or a similar telescope will be smaller than current ground-based PSFs, and more isotropic and stable over time than the PSF of the Hubble Space Telescope. We outline survey strategies for two different regimes--a ``wide 300 square degree survey and a ``deep 15 square degree survey that will accomplish various weak lensing goals including statistical studies and dark matter mapping.