Chuanfu Cheng

Thickness dependence of structural, optical and electrical properties of ZnO:Al films prepared on flexible substrates

The thickness dependence of structural, optical and electrical properties of the ZnO:Al films on polypropylene adipate (PPA) substrates have been studied. It was observed that with an increase in film thickness, the crystallite sizes and the density of the films were increased, the resistivity was decreased, and the average transmittance in the wavelength range of the visible spectrum was also slightly decreased.

Bias voltage dependence of properties for depositing transparent conducting ITO films on flexible substrate

Abstract Good transparent conducting indium tin oxide films with good adherence were deposited on water-cooled polypropylene adipate substrate using bias r.f. magnetron sputtering. The films with resistivity as low as 6.3×10 −4 Ω cm and transmittance over 80% have been obtained by adjusting the bias voltage. It was observed that the structural, electrical and optical properties of the films depend on the bias voltage applied to substrate table.

Comparison of the properties for ZnO:Al films deposited on polyimide and glass substrates

Transparent conducting aluminum–doped zinc oxide (ZnO:Al) films have been prepared on polyimide (PI) and Corning 7059 substrates by r.f. magnetron sputtering technique at low substrate temperature (25–210 °C). Polycrystalline ZnO:Al films having a preferred orientation with the c-axis perpendicular to the substrate were deposited with resistivity as low as 8.5 × 10 −4 cm on PI substrates and 7.1 ×10 − 4 cm on glass substrates. The average transmittance exceeded 74 and 85% in the visible spectrum for 360 and 390 nm thick films deposited on PI and glass, respectively. A comparison of the properties of the films deposited on glass and organic substrates was performed.

ITO films deposited on water-cooled flexible substrate by bias RF Magnetron Sputtering

Abstract Indium tin oxide (ITO) films were deposited on water-cooled polypropylene adipate (PPA) substrate using bias RF magnetron sputtering from a ceramic target composed of In 2 O 3 (90%)+SnO 2 (10%). Good polycrystalline-structured ITO films with a low electrical resistivity of 6.3×10 −4 Ω cm have been obtained by applying a negative bias of about −40 V to the substrate at a water-cooled substrate temperature (18±2°C). The visible transmittance of all obtained films was over 80% and in the wavelength range of 400–550 nm, the transmittances increase with increasing the negative bias. X-ray diffraction spectra revealed that all the films oriented preferably with [222] direction and [400] diffraction peak decreased with increasing the negative bias. Both the X-ray diffraction spectra and atomic force microscope (AFM) measurement suggested that the average crystalline size, as well as the conductivity have a maximum value at the bias of about −40 V. The influences of argon pressure and the proportion of SnO 2 on the conductivity of the films were also studied. The optimum argon pressure is 0.5–1 Pa, and the proper content of SnO 2 is 7.5–10 wt.%.