Chuanhong Jin

Atomic layers of hybridized boron nitride and graphene domains

Two-dimensional materials, such as graphene and monolayer hexagonal BN (h-BN), are attractive for demonstrating fundamental physics in materials and potential applications in next-generation electronics. Atomic sheets containing hybridized bonds involving elements B, N and C over wide compositional ranges could result in new materials with properties complementary to those of graphene and h-BN, enabling a rich variety of electronic structures, properties and applications. Here we report the synthesis and characterization of large-area atomic layers of h-BNC material, consisting of hybridized, randomly distributed domains of h-BN and C phases with compositions ranging from pure BN to pure graphene. Our studies reveal that their structural features and bandgap are distinct from those of graphene, doped graphene and h-BN. This new form of hybrid h-BNC material enables the development of bandgap-engineered applications in electronics and optics and properties that are distinct from those of graphene and h-BN.

Graphene Annealing: How Clean Can It Be?

Surface contamination by polymer residues has long been a critical problem in probing graphenes intrinsic properties and in using graphene for unique applications in surface chemistry, biotechnology, and ultrahigh speed electronics. Poly(methyl methacrylate) (PMMA) is a macromolecule commonly used for graphene transfer and device processing, leaving a thin layer of residue to be empirically cleaned by annealing. Here we report on a systematic study of PMMA decomposition on graphene and of its impact on graphenes intrinsic properties using transmission electron microscopy (TEM) in combination with Raman spectroscopy. TEM images revealed that the physisorbed PMMA proceeds in two steps of weight loss in annealing and cannot be removed entirely at a graphene susceptible temperature before breaking. Raman analysis shows a remarkable blue-shift of the 2D mode after annealing, implying an anneal-induced band structure modulation in graphene with defects. Calculations using density functional theory show that local rehybridization of carbons from sp(2) to sp(3) on graphene defects may occur in the random scission of polymer chains and account for the blue-shift of the Raman 2D mode.

Exploring atomic defects in molybdenum disulphide monolayers

Defects usually play an important role in tailoring various properties of two-dimensional materials. Defects in two-dimensional monolayer molybdenum disulphide may be responsible for large variation of electric and optical properties. Here we present a comprehensive joint experiment–theory investigation of point defects in monolayer molybdenum disulphide prepared by mechanical exfoliation, physical and chemical vapour deposition. Defect species are systematically identified and their concentrations determined by aberration-corrected scanning transmission electron microscopy, and also studied by ab-initio calculation. Defect density up to 3.5 × 1013 cm−2 is found and the dominant category of defects changes from sulphur vacancy in mechanical exfoliation and chemical vapour deposition samples to molybdenum antisite in physical vapour deposition samples. Influence of defects on electronic structure and charge-carrier mobility are predicted by calculation and observed by electric transport measurement. In light of these results, the growth of ultra-high-quality monolayer molybdenum disulphide appears a primary task for the community pursuing high-performance electronic devices.

Plasma-assisted fabrication of monolayer phosphorene and its Raman characterization

AbstractThere have been continuous efforts to seek novel functional two-dimensional semiconductors with high performance for future applications in nanoelectronics and optoelectronics. In this work, we introduce a successful experimental approach to fabricate monolayer phosphorene by mechanical cleavage and a subsequent Ar+ plasma thinning process. The thickness of phosphorene is unambiguously determined by optical contrast spectra combined with atomic force microscopy (AFM). Raman spectroscopy is used to characterize the pristine and plasma-treated samples. The Raman frequency of the A2g mode stiffens, and the intensity ratio of A2g to A1g modes shows a monotonic discrete increase with the decrease of phosphorene thickness down to a monolayer. All those phenomena can be used to identify the thickness of this novel two-dimensional semiconductor. This work on monolayer phosphorene fabrication and thickness determination will facilitate future research on phosphorene.

Current-voltage characteristics and parameter retrieval of semiconducting nanowires

Electrical transport measurements were conducted on semiconducting nanowires and three distinct current-voltage (I-V) characteristics were observed, i.e., almost symmetric, almost rectifying, and almost linear. These I-V characteristics were modeled by treating the transport in the nanowire as in a metal-semiconductor-metal structure involving two Schottky barriers and a resistor in between these barriers, and the transport is shown to be dominated by the reverse-biased Schottky barrier under low bias and by the semiconducting nanowire at large bias. In contrast to the conventional Schottky diode, the reverse current in the nano-Schottky barrier structure is not negligible and the current is largely tunneling rather than thermionic. Experimental I-V curves are reproduced very well using our model, and a method for extracting nanowire resistance, electron density, and mobility is proposed and applied to ZnO, CdS, and Bi2S3 nanowires.

Clean Transfer of Graphene for Isolation and Suspension

Fabrication of large-area clean graphene sheets is the first step toward the development of high-performance applications in surface chemistry and biotechnology as well as in high-mobility electronics. Here we demonstrate the clean transfer of graphene grown by chemical vapor deposition on Cu foil, with surface cleanness defined by transmission electron microscopy (TEM) in combination with Raman scattering on the same position of suspended graphene sheets. For clean graphene, the Raman spectra exhibit distinctive features that can explicitly discriminate from that of graphene covered with a thin layer of amorphous carbon such as residual poly(methyl methacrylate) (PMMA). By applying this technique to graphene sheets with various degrees of surface cleanness, we show that the quantitative characterization of the thickness of surface contaminants is possible based on multiple reflections and interference of light in samples.

Growth of Large-Area 2D MoS2(l_,)Se2, Semiconductor

Semiconducting MoS₂(₁-x) Se₂x mono-layers where x = 0-0.40 are successfully grown over large areas. A random arrangement of the S and Se atoms and a tunable bandgap photoluminescence are observed. Atomically thin, 2D semiconductor alloys with tunable bandgaps have potential applications in nano- and opto-electronics. Field-effect transistors fabricated with the monolayers exhibit high on/off ratios of >10(5).

Sulfur and Nitrogen Co-Doped, Few-Layered Graphene Oxide as a Highly Efficient Electrocatalyst for the Oxygen-Reduction Reaction

S and N co-doped, few-layered graphene oxide is synthesized by using pyrimidine and thiophene as precursors for the application of the oxygen reduction reaction (ORR). The dual-doped catalyst with pyrrolic/graphitic N-dominant structures exhibits competitive catalytic activity (10.0 mA cm(-2) kinetic-limiting current density at -0.25 V) that is superior to that for mono N-doped carbon nanomaterials. This is because of a synergetic effect of N and S co-doping. Furthermore, the dual-doped catalyst also shows an efficient four-electron-dominant ORR process, which has excellent methanol tolerance and improved durability in comparison to commercial Pt/C catalysts.

Plumbing carbon nanotubes

Since their discovery, the possibility of connecting carbon nanotubes together like water pipes has been an intriguing prospect for these hollow nanostructures. The serial joining of carbon nanotubes in a controlled manner offers a promising approach for the bottom-up engineering of nanotube structures--from simply increasing their aspect ratio to making integrated carbon nanotube devices. To date, however, there have been few reports of the joining of two different carbon nanotubes. Here we demonstrate that a Joule heating process, and associated electro-migration effects, can be used to connect two carbon nanotubes that have the same (or similar) diameters. More generally, with the assistance of a tungsten metal particle, this technique can be used to seamlessly join any two carbon nanotubes--regardless of their diameters--to form new nanotube structures.

Epitaxy and Photoresponse of Two-Dimensional GaSe Crystals on Flexible Transparent Mica Sheets

We present the controlled synthesis of high-quality two-dimensional (2D) GaSe crystals on flexible transparent mica substrates via a facile van der Waals epitaxy method. Single- and few-layer GaSe nanoplates with the lateral size of up to tens of micrometers were produced. The orientation and nucleation sites of GaSe nanoplates were well-controlled. The 2D GaSe crystal-based photodetectors were demonstrated on both mechanically rigid SiO2/Si and flexible mica substrates. Efficient photoresponse was observed in 2D GaSe crystal devices on transparent flexible mica substrates, regardless of repeated bending with different radii. The controlled growth of 2D GaSe crystals with efficient photoresponsivity opens up opportunities for both fundamental aspects and new applications in photodetectors.