Chuanxiao Xiao

Employing Lead Thiocyanate Additive to Reduce the Hysteresis and Boost the Fill Factor of Planar Perovskite Solar Cells.

Lead thiocyanate in the perovskite precursor can increase the grain size of a perovskite thin film and reduce the conductivity of the grain boundaries, leading to perovskite solar cells with reduced hysteresis and enhanced fill factor. A planar perovskite solar cell with grain boundary and interface passivation achieves a steady-state efficiency of 18.42%.

Cooperative tin oxide fullerene electron selective layers for high-performance planar perovskite solar cells

Both tin oxide (SnO2) and fullerenes have been reported as electron selective layers (ESLs) for producing efficient lead halide perovskite solar cells. Here, we report that SnO2 and fullerenes can work cooperatively to further boost the performance of perovskite solar cells. We find that fullerenes can be redissolved during perovskite deposition, allowing ultra-thin fullerenes to be retained at the interface and some dissolved fullerenes infiltrate into perovskite grain boundaries. The SnO2 layer blocks holes effectively; whereas, the fullerenes promote electron transfer and passivate both the SnO2/perovskite interface and perovskite grain boundaries. With careful device optimization, the best-performing planar perovskite solar cell using a fullerene passivated SnO2 ESL has achieved a steady-state efficiency of 17.75% and a power conversion efficiency of 19.12% with an open circuit voltage of 1.12 V, a short-circuit current density of 22.61 mA cm−2, and a fill factor of 75.8% when measured under reverse voltage scanning. We find that the partial dissolving of fullerenes during perovskite deposition is the key for fabricating high-performance perovskite solar cells based on metal oxide/fullerene ESLs.

A graded catalytic–protective layer for an efficient and stable water-splitting photocathode

Solar water splitting is often performed in highly corrosive conditions, presenting materials stability challenges. Gu et al. show that an efficient and stable hydrogen-producing photocathode can be realized through the application of a graded catalytic–protective layer on top of the photoabsorber.

Junction Quality of SnO2-Based Perovskite Solar Cells Investigated by Nanometer-Scale Electrical Potential Profiling

Electron-selective layers (ESLs) and hole-selective layers (HSLs) are critical in high-efficiency organic-inorganic lead halide perovskite (PS) solar cells for charge-carrier transport, separation, and collection. We developed a procedure to assess the quality of the ESL/PS junction by measuring potential distribution on the cross section of SnO2-based PS solar cells using Kelvin probe force microscopy. Using the potential profiling, we compared three types of cells made of different ESLs but otherwise having an identical device structure: (1) cells with PS deposited directly on bare fluorine-doped SnO2 (FTO)-coated glass; (2) cells with an intrinsic SnO2 thin layer on the top of FTO as an effective ESL; and (3) cells with the SnO2 ESL and adding a self-assembled monolayer (SAM) of fullerene. The results reveal two major potential drops or electric fields at the ESL/PS and PS/HSL interfaces. The electric-field ratio between the ESL/PS and PS/HSL interfaces increased in devices as follows: FTO < SnO2-ESL < SnO2 + SAM; this sequence explains the improvements of the fill factor (FF) and open-circuit voltage (Voc). The improvement of the FF from the FTO to SnO2-ESL cells may result from the reduction in voltage loss at the PS/HSL back interface and the improvement of Voc from the prevention of hole recombination at the ESL/PS front interface. The further improvements with adding an SAM is caused by the defect passivation at the ESL/PS interface, and hence, improvement of the junction quality. These nanoelectrical findings suggest possibilities for improving the device performance by further optimizing the SnO2-based ESL material quality and the ESL/PS interface.

Development of scanning capacitance spectroscopy of CIGS solar cells

We successfully applied scanning capacitance spectroscopy (SCS) on CIGS solar cells. In SCS, a high-quality insulating layer is needed to block the AC and DC conductance between the probe and sample. A sample preparation procedure was developed on CIGS/CdS cross-sectional samples for optimal and reproducible results. Spectra taken with 10-nm intervals showed clear p- and n-type behaviors of CIGS and CdS, respectively. Rapid changes in spectra in the depletion region allowed us to locate the electrical junction with fine resolution of 10-30 nm.

Module degradation mechanisms studied by a multi-scale approach

A key pathway to meeting the Department of Energy SunShot 2020 goals is to reduce financing costs by improving investor confidence through improved photovoltaic (PV) module reliability. A comprehensive approach to further understand and improve PV reliability includes characterization techniques and modeling from module to atomic scale. Imaging techniques, which include photoluminescence, electroluminescence, and lock-in thermography, are used to locate localized defects responsible for module degradation. Small area samples containing such defects are prepared using coring techniques and are then suitable and available for microscopic study and specific defect modeling and analysis.

Suppressing Defects Through Synergistic Effect of Lewis Base and Lewis Acid for Highly Efficient and Stable Perovskite Solar Cells

Achieving long-term operational stability at a high efficiency level for perovskite solar cells is the most challenging issue toward commercialization of this emerging photovoltaic technology. Here, we investigated the cooperation of a Lewis base and a Lewis acid by combining commercial bis-PCBM mixed isomers as the Lewis acid in the antisolvent and N-(4-bromophenyl)thiourea (BrPh-ThR) as the Lewis base in the perovskite solution precursor. The combination of the Lewis base and the Lewis acid synergistically passivates Pb2+ and PbX3− antisite defects, enlarges the perovskite grain size, and improves charge-carrier separation and transport, leading to improved device efficiency from 19.3% to 21.7%. In addition, this Lewis base and acid combination also suppresses moisture incursion and passivates pinholes generated in the hole-transporting layer. The unsealed devices remained at 93% of the initial efficiency value in ambient air (10–20% relative humidity) after 3600 h at 20–25 °C and dropped by 10% after 1500 h under continuous operation at 1-sun illumination and 55 °C in nitrogen with maximum power-point tracking.

Nanometer-scale electrical potential profiling across perovskite solar cells

We used Kelvin probe force microscopy to study the potential distribution on cross-section of perovskite solar cells with different types of electron-transporting layers (ETLs). Our results explain the low open-circuit voltage and fill factor in ETL-free cells, and support the fact that intrinsic SnO2 as an alternative ETL material can make high-performance devices. Furthermore, the potential-profiling results indicate a reduction in junction-interface recombination by the optimized SnO2 layer and adding a fullerene layer, which is consistent with the improved device performance and current-voltage hysteresis.

Determination of the electrical junction in Cu(In, Ga)Se 2 and Cu 2 ZnSnSe 4 solar cells with 20-nm spatial resolution

We located the electrical junction (EJ) of Cu(In,Ga)Se2 (CIGS) and Cu2ZnSnSe4 (CZTS) solar cells with ∼20-nm accuracy using a scanning capacitance spectroscopy (SCS) technique. A procedure was developed to prepare the cross-sectional samples and grow critical high-quality insulating layers for the SCS measurement. We found that CIGS has a buried homojunction with the EJ located at ∼40 nm inside the CIGS/CdS interface. An n-type CIGS was probed in the region 10–30 nm away from the interface. By contrast, the CZTS/CdS cells have a heterointerface junction with a shallower EJ (∼20 nm) than CIGS. The EJ is ∼20 nm from the CZTS/CdS interface, which is consistent with asymmetrical carrier concentrations of the p-CZTS and n-CdS in a heterojunction cell. The unambiguous determination of the junction locations helped explain the large open circuit voltage difference between the state-of-the-art devices of CIGS and CZTS.